Patents by Inventor Pei-Ling Tseng
Pei-Ling Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210174871Abstract: A memory circuit includes a bias voltage generator, a drive circuit, and a resistive random-access memory (RRAM) device. The bias voltage generator includes a first transistor configured to generate a voltage difference based on a first current and an activation voltage, and is configured to output the activation voltage and a bias voltage based on the voltage difference. The drive circuit is configured to receive the bias voltage and output a drive voltage having a voltage level based on the bias voltage, and the RRAM device is configured to receive the activation voltage and conduct a second current responsive to the drive voltage and the activation voltage.Type: ApplicationFiled: February 18, 2021Publication date: June 10, 2021Inventors: Chung-Cheng CHOU, Chien-An LAI, Hsu-Shun CHEN, Zheng-Jun LIN, Pei-Ling TSENG
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Patent number: 10950303Abstract: A circuit includes a bias voltage generator and a current limiter. The bias voltage generator is configured to receive a first reference voltage and output a bias voltage responsive to a first current and the first reference voltage. The current limiter is configured to receive a second current at an input terminal, a second reference voltage, and the bias voltage, and, responsive to the second reference voltage and a voltage level of the input terminal, limit the second current to a current limit level, the voltage level of the input terminal being based on the bias voltage.Type: GrantFiled: May 17, 2019Date of Patent: March 16, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chung-Cheng Chou, Pei-Ling Tseng, Zheng-Jun Lin
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Patent number: 10930344Abstract: A memory circuit includes a bias voltage generator, a drive circuit, and a resistive random-access memory (RRAM) device. The bias voltage generator includes a first current path configured to receive a first current from a current source, and output a bias voltage based on a voltage difference generated from conduction of the first current in the first current path. The drive circuit is configured to receive the bias voltage and output a drive voltage having a voltage level based on the bias voltage, and the RRAM device is configured to conduct a second current responsive to the drive voltage.Type: GrantFiled: May 24, 2019Date of Patent: February 23, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chung-Cheng Chou, Hsu-Shun Chen, Chien-An Lai, Pei-Ling Tseng, Zheng-Jun Lin
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Publication number: 20200388333Abstract: A memory device includes a memory cell and a sense amplifier. The sense amplifier has a reference circuit configured to output a reference voltage and a sensing circuit connected to the memory cell. A comparator includes a first input and a second input, with the first input connected to the reference circuit to receive the reference voltage, and the second input connected to the memory cell.Type: ApplicationFiled: August 24, 2020Publication date: December 10, 2020Inventors: Zheng-Jun Lin, Chung-Cheng Chou, Pei-Ling Tseng
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Patent number: 10755780Abstract: A memory device includes a memory cell and a sense amplifier. The sense amplifier has a reference circuit configured to output a reference voltage and a sensing circuit connected to the memory cell. A comparator includes a first input and a second input, with the first input connected to the reference circuit to receive the reference voltage, and the second input connected to the memory cell. A precharger is configured to selectively precharge the sensing circuit to a predetermined precharge voltage.Type: GrantFiled: February 12, 2019Date of Patent: August 25, 2020Assignee: Taiwan Semiconductor Manufacturing Company, LTD.Inventors: Zheng-Jun Lin, Chung-Cheng Chou, Pei-Ling Tseng
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Publication number: 20190371397Abstract: A circuit includes a bias voltage generator and a current limiter. The bias voltage generator is configured to receive a first reference voltage and output a bias voltage responsive to a first current and the first reference voltage. The current limiter is configured to receive a second current at an input terminal, a second reference voltage, and the bias voltage, and, responsive to the second reference voltage and a voltage level of the input terminal, limit the second current to a current limit level, the voltage level of the input terminal being based on the bias voltage.Type: ApplicationFiled: May 17, 2019Publication date: December 5, 2019Inventors: Chung-Cheng CHOU, Pei-Ling TSENG, Zheng-Jun LIN
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Publication number: 20190371398Abstract: A memory circuit includes a bias voltage generator, a drive circuit, and a resistive random-access memory (RRAM) device. The bias voltage generator includes a first current path configured to receive a first current from a current source, and output a bias voltage based on a voltage difference generated from conduction of the first current in the first current path. The drive circuit is configured to receive the bias voltage and output a drive voltage having a voltage level based on the bias voltage, and the RRAM device is configured to conduct a second current responsive to the drive voltage.Type: ApplicationFiled: May 24, 2019Publication date: December 5, 2019Inventors: Chung-Cheng CHOU, Hsu-Shun CHEN, Chien-An LAI, Pei-Ling TSENG, Zheng-Jun LIN
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Publication number: 20190287612Abstract: A memory device includes a memory cell and a sense amplifier. The sense amplifier has a reference circuit configured to output a reference voltage and a sensing circuit connected to the memory cell. A comparator includes a first input and a second input, with the first input connected to the reference circuit to receive the reference voltage, and the second input connected to the memory cell.Type: ApplicationFiled: February 12, 2019Publication date: September 19, 2019Inventors: Zheng-Jun Lin, Chung-Cheng Chou, Pei-Ling Tseng
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Patent number: 10008921Abstract: A driving power generating circuit configured to generate a driving power to drive a load is provided. The driving power generating circuit includes a signal generating circuit, a power converter circuit, and a sampling control circuit. The signal generating circuit is configured to output a control signal according to a feedback signal and a lock signal. The power converter circuit is electrically connected to the signal generating circuit. The power converter circuit is configured to generate the driving power according to the control signal, so as to drive the load. The sampling control circuit is electrically connected to the signal generating circuit. The sampling control circuit is configured to sample the control signal and output the lock signal according to a sampling result. A method for generating a driving power is also provided.Type: GrantFiled: November 18, 2015Date of Patent: June 26, 2018Assignee: Industrial Technology Research InstituteInventors: Chih-Ping Cheng, Pei-Ling Tseng, Szu-Chieh Liu, Sue-Chen Liao
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Patent number: 9693421Abstract: A lighting apparatus of adjustable color temperature including a luminescent source, a controller and a detector is proposed. The luminescent source is configured to provide an illumination source. The controller is coupled to the luminescent source. The controller is configured to adjust a color temperature of the illumination source according to at least one of global and local color temperatures. The detector is coupled to the controller. The detector is configured to detect a color temperature of a location of the lighting apparatus of adjustable color temperature, so as to provide the local color temperature to the controller. The controller performs a weighting operation for the global and local color temperatures to obtain an operation result for adjusting the color temperature of the illumination source. A method for adjusting color temperature of a lighting apparatus of adjustable color temperature is also proposed.Type: GrantFiled: December 2, 2015Date of Patent: June 27, 2017Assignee: Industrial Technology Research InstituteInventors: Pei-Ling Tseng, Tsai-Kan Chien, Sue-Chen Liao
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Publication number: 20170070133Abstract: A driving power generating circuit configured to generate a driving power to drive a load is provided. The driving power generating circuit includes a signal generating circuit, a power converter circuit, and a sampling control circuit. The signal generating circuit is configured to output a control signal according to a feedback signal and a lock signal. The power converter circuit is electrically connected to the signal generating circuit. The power converter circuit is configured to generate the driving power according to the control signal, so as to drive the load. The sampling control circuit is electrically connected to the signal generating circuit. The sampling control circuit is configured to sample the control signal and output the lock signal according to a sampling result. A method for generating a driving power is also provided.Type: ApplicationFiled: November 18, 2015Publication date: March 9, 2017Inventors: Chih-Ping Cheng, Pei-Ling Tseng, Szu-Chieh Liu, Sue-Chen Liao
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Publication number: 20160381761Abstract: A lighting apparatus of adjustable color temperature including a luminescent source, a controller and a detector is proposed. The luminescent source is configured to provide an illumination source. The controller is coupled to the luminescent source. The controller is configured to adjust a color temperature of the illumination source according to at least one of global and local color temperatures. The detector is coupled to the controller. The detector is configured to detect a color temperature of a location of the lighting apparatus of adjustable color temperature, so as to provide the local color temperature to the controller. The controller performs a weighting operation for the global and local color temperatures to obtain an operation result for adjusting the color temperature of the illumination source. A method for adjusting color temperature of a lighting apparatus of adjustable color temperature is also proposed.Type: ApplicationFiled: December 2, 2015Publication date: December 29, 2016Inventors: Pei-Ling Tseng, Tsai-Kan Chien, Sue-Chen Liao
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Patent number: 9443588Abstract: A resistive memory system, a driver circuit thereof and a method for setting resistances thereof are provided. The resistive memory system includes a memory array, a row selection circuit, a first control circuit and a second control circuit. The memory array has a plurality of resistive memory cells. The row selection circuit is used for activating the resistive memory cells. The first control circuit and the second control circuit are coupled to the resistive memory cells. When each of resistive memory cells is set, the first control circuit and the second control circuit respectively provide a set voltage and a ground voltage to the each of resistive memory cells to form a set current, and the set current is clamped by at least one of the first control circuit and the second control circuit.Type: GrantFiled: June 25, 2015Date of Patent: September 13, 2016Assignee: Industrial Technology Research InstituteInventors: Pei-Ling Tseng, Chia-Chen Kuo, Shyh-Shyuan Sheu, Meng-Fan Chang
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Publication number: 20160118120Abstract: A resistive memory system, a driver circuit thereof and a method for setting resistances thereof are provided. The resistive memory system includes a memory array, a row selection circuit, a first control circuit and a second control circuit. The memory array has a plurality of resistive memory cells. The row selection circuit is used for activating the resistive memory cells. The first control circuit and the second control circuit are coupled to the resistive memory cells. When each of resistive memory cells is set, the first control circuit and the second control circuit respectively provide a set voltage and a ground voltage to the each of resistive memory cells to form a set current, and the set current is clamped by at least one of the first control circuit and the second control circuit.Type: ApplicationFiled: June 25, 2015Publication date: April 28, 2016Inventors: Pei-Ling Tseng, Chia-Chen Kuo, Shyh-Shyuan Sheu, Meng-Fan Chang
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Patent number: 9219479Abstract: A through silicon via (TSV) repair circuit of a semiconductor apparatus is provided. The TSV repair circuit includes a first chip, at least one second chip, at least two TSVs, at least two data path circuits, and an output logic circuit. Each data path circuit includes an input driving circuit, a short-circuit detection circuit, a bias circuit, and a leakage current cancellation circuit. The input driving circuit transforms an input signal into a pending signal and transmits the pending signal to a first terminal of the corresponding TSV. The short-circuit detection circuit detects a short circuit between the corresponding TSV and a silicon substrate according to the input signal and the first terminal of the TSV and generates a short-circuit detection output signal. The leakage current cancellation circuit prevents a leakage current produced by a first level voltage from entering the silicon substrate according to the short-circuit detection output signal.Type: GrantFiled: April 21, 2013Date of Patent: December 22, 2015Assignee: Industrial Technology Research InstituteInventors: Pei-Ling Tseng, Keng-Li Su
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Patent number: 9136250Abstract: A through silicon via (TSV) repair circuit is provided. The TSV repair circuit includes at least two transmission control switches and at least two transmission path modules. Two transmission control switches transmit an input signal of a first chip or a second chip to one of two terminals in each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether to detect whether short-circuit on the TSV and a silicon substrate is present and generate a short-circuit detection output signal. The leakage current cancellation circuit to avoid a leakage current generated by a first level voltage to flow into the silicon substrate according to the short-circuit detection output signal.Type: GrantFiled: May 28, 2013Date of Patent: September 15, 2015Assignee: Industrial Technology Research InstituteInventors: Pei-Ling Tseng, Keng-Li Su
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Patent number: 9136843Abstract: TSV repair circuit of a semiconductor device includes a first chip, a second chip, at least two TSV, at least two data path circuits and an output logic circuit. Each data path circuit comprises an input driving circuit, a TSV detection circuit, a memory device, a protection circuit and a power control circuit. The TSV detection circuit detects a TSV status, the memory device keeps the TSV status, the protection circuit determines whether to pull a first end of the TSV to a ground voltage according to the TSV status, and the power control circuit prevents a leakage current of a power voltage from flowing through a substrate.Type: GrantFiled: July 30, 2014Date of Patent: September 15, 2015Assignee: Industrial Technology Research InstituteInventors: Pei-Ling Tseng, Keng-Li Su, Chih-Sheng Lin, Shyh-Shyuan Sheu
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Patent number: 9076771Abstract: A varactor is provided. A substrate includes a first surface, a second surface and a first opening and a second opening in the substrate. A conductive material is filling the first and second openings, to form a first through-wafer via (TWV) and a second through-wafer via. A first capacitor is coupled between the first through-wafer via and a first terminal. A second capacitor is coupled between the second through-wafer via and a second terminal. A capacitance of a depletion-region capacitor between the first through-wafer via and the second through-wafer via is determined by a bias voltage applied to the first through-wafer via and the second through-wafer via.Type: GrantFiled: August 23, 2013Date of Patent: July 7, 2015Assignee: Industrial Technology Research InstituteInventors: Sih-Han Li, Pei-Ling Tseng, Zhe-Hui Lin, Chih-Sheng Lin
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Patent number: 9059586Abstract: A TSV bidirectional repair circuit of a semiconductor apparatus is provided. The bidirectional repair circuit includes a first and a second bidirectional switches and at least two transmission path modules. The first and the second bidirectional switches determine whether to transmit an input signal of a first chip or a second chip to each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether short-circuit on the corresponding TSV and a silicon substrate is present according to the input signal and the corresponding TSV to produce a short-circuit detection output signal.Type: GrantFiled: May 23, 2013Date of Patent: June 16, 2015Assignee: Industrial Technology Research InstituteInventors: Pei-Ling Tseng, Keng-Li Su
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Publication number: 20140340113Abstract: TSV repair circuit of a semiconductor device includes a first chip, a second chip, at least two TSV, at least two data path circuits and an output logic circuit. Each data path circuit comprises an input driving circuit, a TSV detection circuit, a memory device, a protection circuit and a power control circuit. The TSV detection circuit detects a TSV status, the memory device keeps the TSV status, the protection circuit determines whether to pull a first end of the TSV to a ground voltage according to the TSV status, and the power control circuit prevents a leakage current of a power voltage from flowing through a substrate.Type: ApplicationFiled: July 30, 2014Publication date: November 20, 2014Inventors: Pei-Ling TSENG, Keng-Li SU, Chih-Sheng LIN, Shyh-Shyuan SHEU