Abstract: A driving signal processing method for a large touch display integrated (LTDI) system is provided. The LTDI system includes plural LTDI chips that are concatenated. The LTDI chips include a master LTDI chip and plural slave LTDI chips. The driving signal processing method includes: receiving, by the LTDI chips, display data from a timing controller; and dispersedly outputting, by the master LTDI chip and at least one of the slave LTDI chips, M gate control signals respectively corresponding to M gate lines of a display panel of the LTDI system according to the display data during the display stage of the display panel.

Abstract: A driving signal processing method for a large touch display integrated (LTDI) system is provided. The LTDI system includes plural LTDI chips that are concatenated. The LTDI chips include a master LTDI chip and plural slave LTDI chips. The driving signal processing method includes: receiving, by the LTDI chips, display data from a timing controller; and dispersedly outputting, by the master LTDI chip and at least one of the slave LTDI chips, M gate control signals respectively corresponding to M gate lines of a display panel of the LTDI system according to the display data during the display stage of the display panel.

Abstract: A driver circuit configured to drive a display panel to perform a display operation and a touch sensing operation is provided. The driver circuit includes a touch and display driver integration (TDDI) circuit and an external circuit. The TDDI circuit is configured to drive the display panel to perform the display operation and the touch sensing operation during a display period and a touch sensing period, respectively. The TDDI circuit outputs a reference signal. The external circuit is disposed outside of the TDDI circuit. The external circuit is configured to output a first output voltage and a second output voltage on the basis of the reference signal from the TDDI circuit. The first output voltage is larger than the second output voltage.

Abstract: A driver circuit configured to drive a display panel to perform a display operation and a touch sensing operation is provided. The driver circuit includes a touch and display driver integration (TDDI) circuit and an external circuit. The TDDI circuit is configured to drive the display panel to perform the display operation and the touch sensing operation during a display period and a touch sensing period, respectively. The TDDI circuit outputs a reference signal. The external circuit is disposed outside of the TDDI circuit. The external circuit is configured to output a first output voltage and a second output voltage on the basis of the reference signal from the TDDI circuit. The first output voltage is larger than the second output voltage.

Abstract: A memory circuit properly workable under low working voltage includes a plurality of write word lines, a plurality of write bit lines, a plurality of read/write word lines, a plurality of read/write bit lines, a plurality of read/write inverted word lines, a plurality of virtual voltage source circuits, a plurality of virtual ground circuits, and a plurality of asymmetrical RAM cells constituting a cell array. The asymmetrical RAM cells are formed of seven transistors, five of which are NMOS transistors and two of which are PMOS transistors. The virtual voltage power source circuit and the virtual ground circuit can reinforce the write-in and read abilities under low working voltage to make the write-in and read actions more stable, decrease leakage current, and lower power consumption.

Abstract: A memory circuit properly workable under low working voltage includes a plurality of write word lines, a plurality of write bit lines, a plurality of read/write word lines, a plurality of read/write bit lines, a plurality of read/write inverted word lines, a plurality of virtual voltage source circuits, a plurality of virtual ground circuits, and a plurality of asymmetrical RAM cells constituting a cell array. The asymmetrical RAM cells are formed of seven transistors, five of which are NMOS transistors and two of which are PMOS transistors. The virtual voltage power source circuit and the virtual ground circuit can reinforce the write-in and read abilities under low working voltage to make the write-in and read actions more stable, decrease leakage current, and lower power consumption.

Abstract: A single-ended read random access memory including a plurality of memory units, a clock generator, a bit line load circuit, a control processing unit, and a sensing unit is revealed. The memory units are coupled to a bit line and the clock generator is for generating a clock signal. The bit line load circuit charges the memory units to an operating voltage according to the clock signal. The control processing unit controls at least one of the memory units according to the clock signal to make the memory unit store a stored voltage according to the operating voltage. The sensing unit generates a sensing threshold according to the clock signal and a data dependency, and outputs a data signal according to the sensing threshold and the stored voltage. The operating voltage includes a noise whose ratio to the operating voltage is inversely proportional to the operating voltage.