Abstract: A memory cell of a resistive random access memory and a manufacturing method thereof are provided. The method includes the following steps. A first electrode is formed. A metal oxide layer is formed on the first electrode. An electrode buffer stacked layer is formed on the metal oxide layer and includes a first buffer layer and a second buffer layer, and the first buffer layer is located between the second buffer layer and the metal oxide layer. The second buffer layer reacts with oxygen from the first buffer layer more strongly than the first buffer layer reacts with oxygen from the metal oxide layer. A second electrode layer is formed on the electrode buffer stacked layer.

Abstract: Provided is a three-dimensional resistance memory including a stack of layers. The stack of layers is encapsulated in a dielectric layer and is adjacent to at least one opening in the encapsulating dielectric layer. At least one L-shaped variable resistance spacer is disposed on at least a portion of the sidewall of the opening adjacent to the stack of layers. An electrode layer fills the remaining portion of the opening.

Abstract: A resistive memory structure including at least one reactive layer, at least one electrode, and at least one resistance-changing material is provided. The reactive layer extends along a first direction and a second direction. The electrode extends at least along a third direction, wherein the first direction, the second direction, and the third direction are different from each other. At least part of the resistance-changing material is disposed between the reactive layer and the electrode. When ions diffuse from the resistance-changing material to the reactive layer or from the reactive layer to the resistance-changing material, resistance of the resistance-changing material changes.

Abstract: Provided is a three-dimensional resistance memory including a stack of layers. The stack of layers is encapsulated in a dielectric layer and is adjacent to at least one opening in the encapsulating dielectric layer. At least one L-shaped variable resistance spacer is disposed on at least a portion of the sidewall of the opening adjacent to the stack of layers. An electrode layer fills the remaining portion of the opening.

Abstract: A resistive memory structure including at least one reactive layer, at least one electrode, and at least one resistance-changing material is provided. The reactive layer extends along a first direction and a second direction. The electrode extends at least along a third direction, wherein the first direction, the second direction, and the third direction are different from each other. At least part of the resistance-changing material is disposed between the reactive layer and the electrode. When ions diffuse from the resistance-changing material to the reactive layer or from the reactive layer to the resistance-changing material, resistance of the resistance-changing material changes.

Abstract: A memory cell of a resistive random access memory and a manufacturing method thereof are provided. The method includes the following steps. A first electrode is formed. A metal oxide layer is formed on the first electrode. An electrode buffer stacked layer is formed on the metal oxide layer and includes a first buffer layer and a second buffer layer, and the first buffer layer is located between the second buffer layer and the metal oxide layer. The second buffer layer reacts with oxygen from the first buffer layer more strongly than the first buffer layer reacts with oxygen from the metal oxide layer. A second electrode layer is formed on the electrode buffer stacked layer.