Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

Abstract: Disclosed is a two-phase access authentication method integrating spatial-temporal features in space-air-ground integrated networks. In the method, an access authentication is divided into two phases: a primary authentication phase and a continued authentication phase. In the primary authentication phase, a user equipment and a satellite are respectively initialized and registered through a ground network control center. In the authentication phase, a fast and secure access is achieved by using a user ID, facial features, and other authentication factors. In the continued authentication phase, data of a user flow and behavior features are acquired, and feature comparison is performed by using historical user data; and a security level and an authentication decision are output.

Abstract: A method of depositing a material film on a substrate within a reaction chamber by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant and purging the reaction chamber with a first main purge. The method also includes: contacting the substrate with a second vapor phase reactant by two or more micro pulsing processes, wherein each micro pulsing process comprises: contacting the substrate with a micro pulse of a second vapor phase reactant; and purging the reaction chamber with a micro purge, wherein each of the micro pulses of the second vapor phase reactant provides a substantially constant concentration of the second vapor phase reactant into the reaction chamber. The method may also include; purging the reaction chamber with a second main purge. Device structures including a material film deposited by the methods of the disclosure are also disclosed.

Abstract: An intelligent electric-vehicle charging station is provided. The charging station includes at least one charger. Each charger includes at least one power conversion unit and at least one charging terminal. Each power conversion unit includes an alternating-current power distribution module, a plurality of rectification modules, a switch matrix and a power controller. The alternating-current power distribution module supplies power to each power conversion unit and the at least one charging terminal. The rectification modules are divided into a plurality of groups of modules. The plurality of groups of modules is controlled, through the switch matrix, to be connected to a plurality of direct-current output circuits. Each direct-current output circuit is connected to one charging terminal. The switch matrix switches each group of modules in the plurality of direct-current output circuits according to a control instruction of the power controller.

Abstract: Provided herein are a system and method for ordered charging management of a charging station. The system includes a charging station control-management device, a charging pile monitoring device and a system platform server. The system platform server is configured to send a power capacity of the charging station to the charging station control-management device corresponding to the charging station. The charging pile monitoring device is configured to collect an operating parameter of a charging pile corresponding to the charging pile monitoring device and to send the operating parameter to the charging station control-management device. The charging station control-management device is configured to determine whether the charging station has a power headroom according to the power capacity and the operating parameter of all charging piles at the charging station after receiving a charging request sent by the charging pile monitoring device.

Abstract: Provided is a system and method for ordered charging management of a charging station. The system includes a charging station control-management device, a charging pile monitoring device and a system platform server. The system platform server is configured to send a power capacity of the charging station to the charging station control-management device corresponding to the charging station. The charging pile monitoring device is configured to collect an operating parameter of a charging pile corresponding to the charging pile monitoring device and to send the operating parameter to the charging station control-management device. The charging station control-management device is configured to determine whether the charging station has a power headroom according to the power capacity and the operating parameter of all charging piles at the charging station after receiving a charging request sent by the charging pile monitoring device.

Abstract: An intelligent electric-vehicle charging station is provided. The charging station includes at least one charger. Each charger includes at least one power conversion unit and at least one charging terminal. Each power conversion unit includes an alternating-current power distribution module, a plurality of rectification modules, a switch matrix and a power controller. The alternating-current power distribution module supplies power to each power conversion unit and the at least one charging terminal. The rectification modules are divided into a plurality of groups of modules. The plurality of groups of modules is controlled, through the switch matrix, to be connected to a plurality of direct-current output circuits. Each direct-current output circuit is connected to one charging terminal. The switch matrix switches each group of modules in the plurality of direct-current output circuits according to a control instruction of the power controller.

Abstract: A method of depositing a material film on a substrate within a reaction chamber by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant and purging the reaction chamber with a first main purge. The method also includes: contacting the substrate with a second vapor phase reactant by two or more micro pulsing processes, wherein each micro pulsing process comprises: contacting the substrate with a micro pulse of a second vapor phase reactant; and purging the reaction chamber with a micro purge, wherein each of the micro pulses of the second vapor phase reactant provides a substantially constant concentration of the second vapor phase reactant into the reaction chamber. The method may also include; purging the reaction chamber with a second main purge. Device structures including a material film deposited by the methods of the disclosure are also disclosed.

Abstract: The present invention provides an X-ray detection device and an apparatus and method for calibrating an X-ray detector, the method for calibrating an X-ray detector comprising: retrieving a calibration parameter stored in the X-ray detector relative to the X-ray detector; and calibrating the X-ray detector according to the calibration parameter.

Abstract: A method of depositing a material film on a substrate within a reaction chamber by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant and purging the reaction chamber with a first main purge. The method also includes: contacting the substrate with a second vapor phase reactant by two or more micro pulsing processes, wherein each micro pulsing process comprises: contacting the substrate with a micro pulse of a second vapor phase reactant; and purging the reaction chamber with a micro purge, wherein each of the micro pulses of the second vapor phase reactant provides a substantially constant concentration of the second vapor phase reactant into the reaction chamber. The method may also include; purging the reaction chamber with a second main purge. Device structures including a material film deposited by the methods of the disclosure are also disclosed.

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

Abstract: A method of depositing a material film on a substrate within a reaction chamber by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant and purging the reaction chamber with a first main purge. The method also includes: contacting the substrate with a second vapor phase reactant by two or more micro pulsing processes, wherein each micro pulsing process comprises: contacting the substrate with a micro pulse of a second vapor phase reactant; and purging the reaction chamber with a micro purge, wherein each of the micro pulses of the second vapor phase reactant provides a substantially constant concentration of the second vapor phase reactant into the reaction chamber. The method may also include; purging the reaction chamber with a second main purge. Device structures including a material film deposited by the methods of the disclosure are also disclosed.

Abstract: The present invention provides a method and an apparatus for determining relevance between news and for calculating relevance among multiple pieces of news. The method for determining relevance between news comprises: comparing a piece of first news with a piece of benchmarking news to obtain a distance between the first news and the benchmarking news; comparing a piece of second news with the benchmarking news to obtain a distance between the second news and the benchmarking news; and calculating a distance differential between the distance between the first news and the benchmarking news and the distance between the second news and the benchmarking news to determine the relevance between the first news and the second news according to the distance differential.

Abstract: The present invention provides a method and an apparatus for determining relevance between news and for calculating relevance among multiple pieces of news. The method for determining relevance between news comprises: comparing a piece of first news with a piece of benchmarking news to obtain a distance between the first news and the benchmarking news; comparing a piece of second news with the benchmarking news to obtain a distance between the second news and the benchmarking news; and calculating a distance differential between the distance between the first news and the benchmarking news and the distance between the second news and the benchmarking news to determine the relevance between the first news and the second news according to the distance differential.

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

Abstract: The present invention discloses a serum-free medium for full suspension culture of MDCK cells and a preparation method of the serum-free medium. The serum-free medium for full suspension culture of the MDCK cells comprises basic metabolic nutrients, nucleotide, vitamins, inorganic salts, a shear force protective agent, a cell clustering resisting agent, a pH buffer agent, a pH indicator, an influenza virus proliferation accelerant and other additives. The preparation method of the serum-free medium for the full suspension culture of the MDCK cells comprises the following steps: 1) preparing a mixed solution: dissolving and mixing raw materials; and 2) regulating pH: regulating the pH of the mixed solution to 6.3 to 6.7, and setting a constant volume to obtain the serum-free medium for the full suspension culture of the MDCK cells.

Abstract: The present invention provides an X-ray detection device and an apparatus and method for calibrating an X-ray detector, the method for calibrating an X-ray detector comprising: retrieving a calibration parameter stored in the X-ray detector relative to the X-ray detector; and calibrating the X-ray detector according to the calibration parameter.