Abstract: A federated learning training method is performed by a server. The method comprises: receiving gradient information of a labeled sample of each client sent by each client; according to the gradient information sent by each client, obtaining target gradient information belonging to a same labeled sample; determining a client to which each labeled sample belongs; and sending, to a client to which the same labeled sample belongs, the target gradient information corresponding to the same labeled sample.

Abstract: A method of forming a structure on a substrate that includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer to a nitrogen-containing gas to inhibit growth of the nucleation layer at narrow points within the at least one opening. The method includes exposing the at least one opening of the substrate to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening to a molybdenum-containing gas to remove a tungsten nitride layer from the tungsten fill layer.

Abstract: In a method for training a federated learning model, a server obtains a target split mode corresponding to a training node in response to determining that the training node satisfies a preset splitting condition. The server notifies a client to perform, based on the target split mode, node splitting. The server performs a next round of training by taking a left subtree node generated by performing the node splitting as a new training node until an updated training node does not satisfy the preset splitting condition. The server performs a next round of training by taking another non-leaf node of the boosting tree as a new training node. The server stops training and generates a target federated learning model in response to determining that a node dataset of the plurality of boosting trees is empty.

Abstract: A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.

Abstract: A method of forming a structure on a substrate includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer a nitrogen-containing gas to inhibit growth of the nucleation layer at narrow portions within the at least one opening. The method includes exposing the at least one opening to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening of the substrate to the nitrogen-containing gas or a nitrogen-containing plasma to inhibit growth of portions of the fill layer along the at least one opening.

Abstract: A substrate processing system is provided having a processing chamber. The processing chamber includes a lid plate, one or more chamber sidewalls, and a chamber base that collectively define a processing volume. An annular plate is coupled to the lid plate, and an edge manifold is fluidly coupled to the processing chamber through the annular plate and the lid plate. The substrate processing system includes a center manifold that is coupled to the lid plate.

Abstract: A method of forming a structure on a substrate includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer a nitrogen trifluoride-containing gas to inhibit growth of the nucleation layer at narrow portions within the at least one opening. The method includes exposing the at least one opening to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening of the substrate to the nitrogen trifluoride-containing gas or a nitrogen-containing plasma to inhibit growth of portions of the fill layer along the at least one opening.

Abstract: A shadow ring for a processing chamber, such as a semiconductor processing chamber, is an annular member including a body with a radially inwardly projecting lip. The shadow ring includes a feature that mitigates heat transfer between the lip and the rest of the body. In one example, the feature includes a plurality of apertures, each aperture extending from an upper opening at an upper surface of the shadow ring to a corresponding lower opening at a lower surface of the shadow ring. A neck between adjacent apertures creates a bottleneck that hinders conductive heat transfer.

Abstract: A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Abstract: A method of forming an interconnect structure over a substrate includes forming a nucleation layer over a surface of the substrate. The surface of the substrate comprises a plurality of openings, and the process of forming the nucleation layer includes (a) exposing the substrate to a tungsten-containing precursor gas to form a tungsten-containing layer over a surface of each of the plurality of openings, (b) exposing the formed tungsten-containing layer to an etchant gas, wherein exposing the tungsten-containing layer to the etchant gas etches at least a portion of the tungsten-containing layer disposed at a top region of each of the plurality of openings, and repeating (a) and (b) one or more times. The method further includes forming a bulk layer over the formed nucleation layer.

Abstract: A training method for evaluating the bonding accuracy of orthodontic brackets is provided. The evaluation method includes a training device for racket bonding accuracy evaluation which includes virtual teeth with root-shaped connectors and an evaluation base to fix the virtual teeth. Multiple reference lines are marked on the evaluation base, and their intersection is set as the evaluation point. When the virtual tooth is fixed to the evaluation base, the reference lines and the evaluation points are utilized for rapid evaluation of the bonding accuracy of the bracket. Moreover, thanks to their horizontal arrangement, when there are multiple virtual teeth, the evaluation of bracket bonding would be more intuitive and efficient than using the traditional articulator.

Abstract: Embodiments of the disclosure provided herein generally relate to a bottom cover plate (BCP) that enables control of radiation loss from a heating element inside a chamber for processing a substrate. The heating element is used to heat the substrate before or during processing and may heat the substrate unevenly due to uneven heat losses within the chamber. For example, the uneven heating of the substrate may result in uneven deposition of a material on the substrate, which may result in excess processing to correct the deposition or wasted product from disposing of improperly processed substrates. The BCP may be used to correct the uneven heating of the substrate.

Abstract: A structure of a substrate is provided including a tungsten-containing layer including a nucleation layer and a fill layer. The nucleation layer is disposed along sidewalls of the opening. The nucleation layer includes boron and tungsten. The fill layer is disposed over the nucleation layer within the opening. The tungsten-containing layer includes a resistivity of about 16 ??·cm or less. The tungsten-containing layer has a thickness of about 200 ? to about 600 ?. The tungsten-containing layer thickness is half a width of the tungsten-containing layer disposed within the opening between opposing sidewall portions of the opening.

Abstract: Embodiments herein are generally directed to methods of forming high aspect ratio metal contacts and/or interconnect features, e.g., tungsten features, in a semiconductor device. Often, conformal deposition of tungsten in a high aspect ratio opening results in a seam and/or void where the outward growth of tungsten from one or more walls of the opening meet. Thus, the methods set forth herein provide for a desirable bottom up tungsten bulk fill to avoid the formation of seams and/or voids in the resulting interconnect features, and provide an improved contact metal structure and method of forming the same. In some embodiments, an improved overburden layer or overburden layer structure is formed over the field region of the substrate to enable the formation of a contact or interconnect structure that has improved characteristics over conventionally formed contacts or interconnect structures.

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Abstract: A training method for evaluating the bonding accuracy of orthodontic brackets is provided. The evaluation method includes a training device for racket bonding accuracy evaluation which includes virtual teeth with root-shaped connectors and an evaluation base to fix the virtual teeth. Multiple reference lines are marked on the evaluation base, and their intersection is set as the evaluation point. When the virtual tooth is fixed to the evaluation base, the reference lines and the evaluation points are utilized for rapid evaluation of the bonding accuracy of the bracket. Moreover, thanks to their horizontal arrangement, when there are multiple virtual teeth, the evaluation of bracket bonding would be more intuitive and efficient than using the traditional articulator.

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Abstract: Methods and apparatus for cleaning a showerhead are provided. For example, the methods includes moving a substrate support including a heater disposed therein from a substrate processing position a first distance away from the showerhead to a cleaning position a second distance away from the showerhead, wherein the second distance is less than the first distance; heating the showerhead using the heater disposed in the substrate support to a predetermined temperature; at least one of supplying at least one cleaning gas to the processing chamber to form a plasma or supplying the plasma from a remote plasma source; and providing a predetermined pressure within an inner volume of the processing chamber and maintaining the plasma within the inner volume of the processing chamber while heating the showerhead to the predetermined temperature.

Abstract: A method and system for determining a thickness of a conductive film layer deposited on a wafer include at two eddy current sensors to take electrical resistivity measurements of the conductive film layer on the wafer as the wafer is being transported by a robot arm, a temperature sensor to determine a temperature change of the wafer during the electrical resistivity measurement, and a processing device to adjust a value of the electrical resistivity measurement by an amount based on the determined temperature change and to determine a thickness of the conductive film layer using the adjusted value of the electrical resistivity measurement and a previously determined correlation between electrical resistivity measurement values and respective thicknesses of conductive film layers. Alternatively, the wafer can be kept at a steady temperature when taking electrical resistivity measurements of the conductive film layer to determine a thickness of the conductive film layer.