Abstract: A method for forming a semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing a crystalline silicon substrate having a substantially clean deposition surface in a vacuum chamber; heating the silicon substrate to an oxidation temperature To in the range of 550 to 1200 ° C.; supplying, while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer and a crystalline silicon top layer. Related semiconductor structures are described.

Abstract: This disclosure relates to a method (100) for passivating a semiconductor structure, comprising a semiconductor layer and an oxide layer on the semiconductor layer; a semiconductor structure; and a vacuum processing system. The method (100) comprises providing the semiconductor structure (110) in a vacuum chamber (310) and, while keeping the semiconductor structure in the vacuum chamber (120) throughout a refinement period with a duration of at least 25 s refining the oxide layer (130) by maintaining temperature (131) of the semiconductor structure within a refinement temperature range extending from 20° C., to 800° C., and maintaining total pressure (132) in the vacuum chamber below a maximum total pressure, of 1×10?3 mbar.

Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).

Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).

Abstract: A method for forming a semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing a crystalline silicon substrate having a substantially clean deposition surface in a vacuum chamber; heating the silicon substrate to an oxidation temperature To in the range of 550 to 1200 ° C.; supplying, while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer and a crystalline silicon top layer. Related semiconductor structures are described.

Abstract: A method (100) for forming a semiconductor structure (200) comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing (120) a crystalline silicon substrate (201) having a substantially clean deposition surface (202) in a vacuum chamber; heating (130) the silicon substrate to an oxidation temperature To in the range of 550 to 1200, 550 to 1000, or 550 to 850° C.; supplying (140), while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer (204) with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer (203) and a crystalline silicon top layer (205).

Abstract: The invention relates to a mobile operating unit for an elevator, comprising an operating interface manually operable by a user to control movement of an elevator car; and an orientation sensor for sensing orientation of the operating unit. The invention also relates to an elevator comprising said mobile operating unit and a method for monitoring elevator wherein said mobile operating unit is used.

Abstract: This disclosure relates to a semiconductor structure (100), comprising a crystalline silicon substrate (110), having a surface (111), and a crystalline silicon oxide superstructure (120) on the surface (111) of the silicon substrate (110), the silicon oxide superstructure (120) having a thickness of at least two molecular layers and a (1×1) plane structure using Wood's notation.

Abstract: A detecting device for indicating the intensity of a predetermined type of radiation present in electromagnetic radiation incident on the detecting device can include: a filter element for filtering the incident electromagnetic radiation, wherein the filter element is configured to filter off electromagnetic radiation with a wavelength of above 590 nm from the incident electromagnetic radiation; a converging element configured to increase the density of photons of the predetermined type of radiation present in the incident electromagnetic radiation; and a sensor element of material arranged to receive the incident electromagnetic radiation that has passed through the filter element and the converging element for indicating the intensity of the predetermined type of radiation present in the incident electromagnetic radiation by change of the color of the sensor element of material, wherein the material is represented by the following formula: (M?)8(M?M??)6O24(X,S)2:M?? (formula (I)).

Abstract: The elevator comprising a car moving upwards and downwards in a well, a controller controlling the elevator, and a well lighting. The method comprises detecting a manual unlocking or a manual opening of a landing door, activating the well lighting automatically when the controller detects a manual unlocking or a manual opening of a landing door.

Abstract: The invention relates to a mobile operating unit for an elevator, comprising an operating interface manually operable by a user to control movement of an elevator car; and an orientation sensor for sensing orientation of the operating unit. The invention also relates to an elevator comprising said mobile operating unit and a method for monitoring elevator wherein said mobile operating unit is used.

Abstract: A detecting device for indicating the intensity of a predetermined type of radiation present in electromagnetic radiation incident on the detecting device can include: a filter element for filtering the incident electromagnetic radiation, wherein the filter element is configured to filter off electromagnetic radiation with a wavelength of above 590 nm from the incident electromagnetic radiation; a converging element configured to increase the density of photons of the predetermined type of radiation present in the incident electromagnetic radiation; and a sensor element of material arranged to receive the incident electromagnetic radiation that has passed through the filter element and the converging element for indicating the intensity of the predetermined type of radiation present in the incident electromagnetic radiation by change of the color of the sensor element of material, wherein the material is represented by the following formula: (M?)8(M?M??)6O24(X,S)2:M?? (formula (I)).

Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).

Abstract: A method (100) for forming a semiconductor structure (200) comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing (120) a crystalline silicon substrate (201) having a substantially clean deposition surface (202) in a vacuum chamber; heating (130) the silicon substrate to an oxidation temperature To in the range of 550 to 1200, 550 to 1000, or 550 to 850° C.; supplying (140), while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer (204) with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer (203) and a crystalline silicon top layer (205).

Abstract: The method of performing maintenance of an elevator is performed by unlocking and opening a landing door at a lowermost landing manually, activating a first stop button in the shaft, whereby a safety circuit of the elevator is opened so that operation of the car is completely prevented, entering into the shaft, closing the landing door, climbing down from the lowermost landing to the pit, turning a drive switch in a maintenance control unit positioned in the pit into a maintenance drive mode, whereby the first stop button is by-passed so that the car can be driven from the maintenance control unit upwards and downwards in the shaft.

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Abstract: The elevator comprising a car moving upwards and downwards in a well, a controller controlling the elevator, and a well lighting. The method comprises detecting a manual unlocking or a manual opening of a landing door, activating the well lighting automatically when the controller detects a manual unlocking or a manual opening of a landing door.

Abstract: The elevator comprising a car moving upwards and downwards in a well, a controller controlling the elevator, and a well lighting. The method comprises detecting an activation of a well access operation mode of the elevator, activating the well lighting automatically when the controller detects that the well access operation mode of the elevator has been activated.

Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.