Abstract: A precursor supply cabinet for accommodating one or more precursor containers having cabinet walls defining an inner cabinet space. The precursor supply cabinet includes a ventilation discharge connection arranged to discharge ventilation gas from the inner cabinet space, one or more ventilation inlet connections, two or more separate gas tight precursor supply chambers for accommodating precursor containers. The gas tight precursor supply chambers are arranged inside the inner cabinet space of the precursor supply cabinet such that the inner cabinet space of the precursor supply cabinet surrounding the separate gas tight precursor supply chambers is ventilated.

Abstract: A nozzle head and an apparatus for subjecting a surface of a substrate to successive surface reactions of at least two precursors according to the principles of atomic layer deposition, the nozzle head includes a nozzle head body, a nozzle head output face and gas channels for transporting gas. The nozzle head further includes a first through hole through at least two of the two or more nozzles and a first tube having a tube wall and being fitted into the first through hole, said first tube including gas conduits provided in the tube wall for providing a fluid communication between the first tube and the gas channels in connection with the two or more nozzles.

Abstract: The invention relates to a nozzle head for subjecting a surface of a substrate to successive surface reactions of at least two precursor gases according to the principles of atomic layer deposition. The nozzle head comprises a body; an output face via which at least one precursor gas is supplied towards the surface of the substrate; and two or more nozzles provided in connection with the output face for supplying the at least one precursor gas. The nozzle head further comprises a nozzle head chamber inside the body of the nozzle head, said nozzle head chamber is arranged in fluid communication with the two or more nozzles. The nozzle head chamber is provided with a gas inlet for supplying gas into the nozzle head chamber from a gas source outside the nozzle head.

Abstract: A method and an apparatus including a nozzle head having an output face and including at least one precursor nozzle including a supply channel and at least one discharge nozzle including a discharge channel. The apparatus further including a supply line in a fluid communication with the supply channel of the precursor nozzle; and a discharge line in a fluid communication with the discharge channel of the discharge nozzle. The discharge line is connected to the supply line for circulating precursor in the nozzle head by returning at least part of the discharge flow from the output face of the nozzle head via the discharge channel of the discharge nozzle to the supply channel of the precursor nozzle.

Abstract: A nozzle head and apparatus for subjecting a surface of a substrate to alternate surface reactions of at least two precursors (A, B) includes an output face, at least one gas supply nozzle, and at least one discharge nozzle. The nozzle head includes on the output face in the following order: a first zone end nozzle, a gas supply nozzle and a second zone end nozzle, repeated one or more times. The first zone end nozzle is arranged at a first distance (LY) from the gas supply nozzle and the second zone end nozzle is arranged at a second distance (LX) from the gas supply nozzle. The second distance (LX) is greater than the first distance (LY).

Abstract: A nozzle head and an apparatus for subjecting a surface of a substrate to successive surface reactions of at least two precursors according to the principles of atomic layer deposition, the nozzle head includes a nozzle head body, a nozzle head output face and gas channels for transporting gas. The nozzle head further includes a first through hole through at least two of the two or more nozzles and a first tube having a tube wall and being fitted into the first through hole, said first tube including gas conduits provided in the tube wall for providing a fluid communication between the first tube and the gas channels in connection with the two or more nozzles.

Abstract: The invention relates to a nozzle and nozzle head arranged to supply gas towards a surface of a substrate. The nozzle comprises a nozzle output surface via which the gas is supplied towards the surface of the substrate, a nozzle top surface opposite the nozzle output surface, and a nozzle side wall extending between the nozzle output surface and the nozzle top surface. The nozzle further comprises at least one recess provided to the nozzle side wall, the at least one recess extending between the nozzle top surface and the nozzle output surface for providing a gas passage from the nozzle top surface to the nozzle output surface when the nozzle side wall is against a counter surface.

Abstract: The present invention relates to an apparatus, method, a reaction chamber and a use of a reaction chamber for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus comprises a vacuum chamber; a detachable reaction chamber arranged to be installed inside the vacuum chamber, and inside which the substrate is positioned during processing and a precursor system for supplying the at least first and second precursors into the action chamber and for discharging the at least first and second precursors from the reaction chamber. According to the present invention the reaction chamber is provided as a gastight vessel.

Abstract: A method and an apparatus for coating a substrate by subjecting a surface of the substrate to successive surface reactions of a first precursor and a second precursor in a reaction chamber. The method includes the steps of arranging the substrate to the substrate support in the reaction zone; supplying a predetermined amount of the first precursor to the reaction chamber for providing a flow of the first precursor to the reaction zone; supplying the second precursor for providing a flow of the second precursor through the reaction zone and discharging the second precursor from the reaction chamber, the second precursor being inactive to react with the first precursor; generating plasma discharge to the reaction zone for forming active precursor radicals from the second precursor supplied into the reaction zone, the active precursor radicals being active to react with the first precursor.

Abstract: A method and an apparatus for coating a substrate by subjecting a surface of the substrate to successive surface reactions of a first precursor and a second precursor in a reaction chamber. The method includes the steps of arranging the substrate to the substrate support in the reaction zone; supplying a predetermined amount of the first precursor to the reaction chamber for providing a flow of the first precursor to the reaction zone; supplying the second precursor for providing a flow of the second precursor through the reaction zone and discharging the second precursor from the reaction chamber, the second precursor being inactive to react with the first precursor; generating plasma discharge to the reaction zone for forming active precursor radicals from the second precursor supplied into the reaction zone, the active precursor radicals being active to react with the first precursor.

Abstract: A nozzle head, apparatus and method for providing a coating on a surface of a substrate by subjecting the surface of the substrate to successive surface reactions of at least two precursors according to principles of atomic layer deposition. The nozzle head comprises an output face provided with at least two different precursor zones, the at least two different precursor zones being arranged to provide different coating layers on the surface of the substrate.

Abstract: The present invention relates to an apparatus, method, a reaction chamber and a use of a reaction chamber for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus comprises a vacuum chamber; a detachable reaction chamber arranged to be installed inside the vacuum chamber, and inside which the substrate is positioned during processing and a precursor system for supplying the at least first and second precursors into the action chamber and for discharging the at least first and second precursors from the reaction chamber. According to the present invention the reaction chamber is provided as a gastight vessel.

Abstract: The invention relates to an apparatus for subjecting a surface of a substrate to surface reactions of at least a first precursor and a second precursor according to the principles of atomic layer deposition. The apparatus comprises a reaction chamber (1) forming a reaction space (2) for receiving precursor gases reacting on the surface of the substrate. The apparatus further comprises a substrate support (3) for holding the substrate; a dielectric plate (4); and an electrode (7) coupled to a voltage source (8) to induce voltage to the electrode (7) for generating electric discharge to the reaction space (2). The dielectric plate (4) is arranged between the substrate support (3) and the electrode (7) and such that the reaction space (2) is arranged between the substrate support (3) and the dielectric plate (4).

Abstract: The present invention relates to an apparatus, method, a reaction chamber and a use of a reaction chamber for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus includes a vacuum chamber; a detachable reaction chamber arranged to be installed inside the vacuum chamber, and inside which the substrate is positioned during processing and a precursor system for supplying the at least first and second precursors into the action chamber and for discharging the at least first and second precursors from the reaction chamber. According to the present invention the reaction chamber is provided as a gastight vessel.

Abstract: The invention relates to an apparatus for processing a surface of a substrate by atomic layer deposition and to a method for operating the apparatus. The apparatus includes a deposition chamber and one or more lead-through connections provided between one or more side chambers and the deposition chamber. The one or more lead through connections includes one or more lead-through chambers and a secondary pressure device operatively connected to the one or more lead-through chambers.

Abstract: An apparatus for processing a surface of a substrate by subjecting the surface of the substrate to successive surface reactions of at least a first precursor and a second precursor, wherein the apparatus includes at least one nozzle head having two or more precursor nozzles for subjecting the surface of the substrate to at least the first and second precursor, and a moving mechanism for moving the nozzle head in non-linear oscillating movement between a first extreme position and a second extreme position via a centre position. The moving mechanism further includes a first driving mechanism and second driving mechanism connected to the nozzle head and arranged to control in co-operation the non-linear oscillating movement between the first and second extreme positions, and a transmission mechanism arranged between the first and second driving means, wherein the transmission means is connected to the first driving means and second driving means.

Abstract: The present invention relates to an apparatus and method for processing a surface of a substrate by subjecting the surface to successive surface reactions of a first and second precursor. The apparatus includes a nozzle head having two or more precursor nozzles and a moving mechanism for moving the nozzle head in non-linear oscillating movement in a first and second movement direction between a first extreme position and a second extreme position via a center position. The moving mechanism includes first driving means for accelerating the nozzle head in the first moving direction and decelerating the nozzle head in the second moving direction and second driving means for accelerating the nozzle head in the second moving direction and decelerating the nozzle head in the first moving direction.

Abstract: Disclosed is an apparatus for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus includes at least one nozzle head having two or more two or more precursor zones for subjecting the surface of the substrate to at least the first and second precursors and a moving mechanism for moving the nozzle head in oscillating movement between a first end position and a second end position. The moving mechanism is arranged to store at least part of the kinetic energy of the nozzle head released in oscillating movement of the nozzle head.

Abstract: An apparatus and a method for processing a surface of a substrate exposes the surface of the substrate to alternating surface reactions of at least a first starting material and a second starting material according to the principles of atomic layer deposition method. A first starting material is fed on the surface of the substrate locally by a source by moving the source in relation to the substrate, and the surface of the substrate processed with the first starting material is exposed to a second starting material present in the atmosphere surrounding the source.

Abstract: A nozzle head, apparatus and method for providing a coating on a surface of a substrate by subjecting the surface of the substrate to successive surface reactions of at least two precursors according to principles of atomic layer deposition. The nozzle head comprises an output face provided with at least two different precursor zones, the at least two different precursor zones being arranged to provide different coating layers on the surface of the substrate.