Abstract: A packaged device includes a circuit board, an electronic component, and a heat storage portion. The electronic component is electrically coupled to the circuit board; and the heat storage portion is disposed on the circuit board or embedded in the circuit board, and the heat storage portion is adjacent to the electronic component, where a specific heat capacity of the heat storage portion is higher than a specific heat capacity of the circuit board, and the heat storage portion is configured to store and release heat. A heat storage material with a relatively high specific heat capacity is introduced into the packaged device, and the heat storage portion is disposed on the circuit board around the electronic component where a large amount of heat generated by the electronic component in a short time can be quickly stored in the heat storage portion and then released to the outside.

Abstract: Indenoisoquinoline topoisomerase I (Top1) inhibitors are a novel class of anticancer agents. The present invention discloses series of prodrugs of two indenoisoquinoline compounds currently in clinical trials as a potential treatment for cancers.

Abstract: Terahertz emitting devices are disclosed. The terahertz emitting device comprises a wafer and a current source. The wafer includes silicon carbide and a dopant. In particular, the wafer may consist of 6H silicon carbide; a nitrogen dopant having a concentration of approximately 1018 cm?3; a boron dopant having a concentration of approximately 1016 cm?3; and an aluminum dopant having a concentration of approximately 1015 cm?3. The current source is electrically coupled to the wafer. The wafer emits radiation having a frequency between approximately 1 THz and 20 THz when driven by the current source.

Abstract: An electrically-pumped terahertz (THz) frequency radiation source (or detector), including an optical gain (or absorption) material with two electrodes electrically coupled to the optical gain material. The optical gain (or absorption) material is formed substantially of at least one group IV element and doped with at least one dopant, which has an intra-center transition frequency in a range of about 0.3 THz to 30 THz. Also, a method of manufacturing electrically-pumped THz frequency radiation sources (or detectors).

Abstract: An electrically-pumped terahertz (THz) frequency radiation source (or detector), including an optical gain (or absorption) material with two electrodes electrically coupled to the optical gain material. The optical gain (or absorption) material is formed substantially of at least one group IV element and doped with at least one dopant, which has an intra-center transition frequency in a range of about 0.3 THz to 30 THz. Also, a method of manufacturing electrically-pumped THz frequency radiation sources (or detectors).