Abstract: A method for producing a pn-junction for a semiconductor device of SiC intended to have at least one lateral zone of junction termination with a lower doping concentration of a first conductivity type than a main zone for smearing out the electrical field at said junction comprising at least the step of applying a first layer of SiC over the entire surface and on top of a second layer of SiC. A mask is applied on the first layer over a portion thereof where said main zone and an ohmic contact are to be formed. It is after that etched through the first layer to the second layer while leaving a main zone of said first layer and a contact layer thereof under said mask.