Abstract: A stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.

Abstract: A memory device responding to device commands for operational controls. An embodiment of memory device includes one or more memory elements, a system element including a memory controller, and a physical interface including command input pins to receive commands for the memory device. The commands include commands for operational controls for the memory device, including one or both of a first command for a reset control to reset the memory device and a second command for a clock enable (CKE) control to halt internal clock distribution for the memory device.

Abstract: A stacked memory allowing variance in device interconnects. An embodiment of a memory device includes a system element for the memory device, the system element including multiple pads, and a memory stack connected with the system element, the memory stack having one or more memory die layers, a connection of the system element and the memory stack including interconnects for connecting a first memory die layer and the plurality of pads of the system element. For a single memory die layer in the memory stack, a first subset of the plurality of pads is utilized for a first group of interconnects for the connection of the system element and the memory stack, and for two or more memory die layers, the first subset and an additional second subset of the plurality of pads are utilized for the first group of interconnects and a second group of interconnects for the connection of the system element and the memory stack.

Abstract: A memory device responding to device commands for operational controls. An embodiment of memory device includes one or more memory elements, a system element including a memory controller, and a physical interface including command input pins to receive commands for the memory device. The commands include commands for operational controls for the memory device, including one or both of a first command for a reset control to reset the memory device and a second command for a clock enable (CKE) control to halt internal clock distribution for the memory device.

Abstract: A memory device responding to device commands for operational controls. An embodiment of memory device includes one or more memory elements, a system element including a memory controller, and a physical interface including command input pins to receive commands for the memory device. The commands include commands for operational controls for the memory device, including one or both of a first command for a reset control to reset the memory device and a second command for a clock enable (CKE) control to halt internal clock distribution for the memory device.

Abstract: A stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.

Abstract: Dynamic operations for operations for a stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.

Abstract: A stacked memory allowing variance in device interconnects. An embodiment of a memory device includes a system element for the memory device, the system element including multiple pads, and a memory stack connected with the system element, the memory stack having one or more memory die layers, a connection of the system element and the memory stack including interconnects for connecting a first memory die layer and the plurality of pads of the system element. For a single memory die layer in the memory stack, a first subset of the plurality of pads is utilized for a first group of interconnects for the connection of the system element and the memory stack, and for two or more memory die layers, the first subset and an additional second subset of the plurality of pads are utilized for the first group of interconnects and a second group of interconnects for the connection of the system element and the memory stack.

Abstract: A memory device responding to device commands for operational controls. An embodiment of memory device includes one or more memory elements, a system element including a memory controller, and a physical interface including command input pins to receive commands for the memory device. The commands include commands for operational controls for the memory device, including one or both of a first command for a reset control to reset the memory device and a second command for a clock enable (CKE) control to halt internal clock distribution for the memory device.

Abstract: Dynamic operations for operations for a stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: A memory agent may include a first memory channel interface and a second memory channel, both with unidirectional links, and logic to synchronize a signal processed by the first memory channel interface with a signal processed by the second memory channel interface. An embodiment of a method may include synchronizing a signal on a first memory channel with unidirectional links with a signal on a second memory channel with unidirectional links.

Abstract: An embedded heat spreader includes a semiconductor die, an elastomer layer attached to the die, a tape lead attached to the elastomer, a portion of the tape lead exposed through the elastomer to connect with the die, a polymer resin attached to the tape lead, and a thermally conductive substrate attached to the polymer resin such that the thermally conductive substrate can spread heat from the semiconductor die.

Abstract: Memory interface apparatus and methods utilize unidirectional links. An embodiment of a memory apparatus may include a first redrive circuit to receive a first signal from a first unidirectional link and redrive the first signal on a second unidirectional link, a second redrive circuit to receive a second signal from a third unidirectional link and redrive the second signal on a fourth unidirectional link, and a memory device or interface coupled to the first redrive circuit. An embodiment of a method may include transmitting a first signal from a memory controller to a memory module over a first unidirectional link, selectively redriving the first signal from the first memory module to a second memory module over a second unidirectional link, and transmitting a second signal from the first memory module to the memory controller over a third unidirectional link.

Abstract: Embodiments of the invention are generally directed to systems, methods, and apparatuses for using the same memory type for both error check and non-error check systems. In an embodiment, a memory device is capable of operating in an error check mode and in a non-error check mode. The memory device includes an output having N error check bit paths for every M data bit paths. In one embodiment, the memory device is to transfer N error check bits with a corresponding M data bits, if the memory device is operating in an error check mode. Other embodiments are described and claimed.

Abstract: A memory agent schedules local and pass-through responses according to an identifier for each response. A response file may be large enough to store responses for a maximum number of requests that may be outstanding on a memory channel. A request file may be large enough to store requests for a maximum number of requests that may be outstanding on the memory channel. The identifier for each request and/or response may be received on the same channel link as the request and/or response. Other embodiments are described and claimed.

Abstract: Memory control that access memory devices having different read latencies is described. In on embodiment, a memory controller may include read latency logic to identify and match received read data with read commands to the memory devices based on values indicative of the read latency for the memory devices. In another embodiment, the memories may include read delay control to insert an amount of delay into the time a memory device takes in responding to a read command.

Abstract: A memory device may determine its device ID in response to the order of a received training pattern. The training pattern may be transmitted over swizzled signal lines to multiple memory devices arranged in a logical stack. Each memory device may be packaged on a substrate having the swizzled signal lines. The memory devices may be physically stacked or planar. Other embodiments are described and claimed.