Abstract: A power semiconductor component having a basic body and at least one contact area. At least one first thin metallic layer of a first material is arranged on the contact area. A second metallic layer—thicker than the first—of a second material is arranged on the first material by a pressure sintering connection of said material. The associated method has the following steps: producing a plurality of power semiconductor components in a wafer; applying at least one first thin metallic layer on at least one contact area of a respective power semiconductor component; arranging a pasty layer, composed of the second material and a solvent, on at least one of the first metallic layers for each power semiconductor component; pressurizing the pasty layer; and singulating the semiconductor components.

Abstract: A power semiconductor module comprising: a substrate, a plurality of conductor tracks arranged thereon, the conductor tracks being electrically insulated from one another, and including power semiconductor components arranged thereon; a connecting device, composed of an alternating layer sequence of at least two electrically conductive layers and at least one electrically insulating layer disposed therebetween, for the circuit-conforming connection of the power semiconductor components, the conductor tracks and/or external contact devices. The electrically conductive layers form connecting tracks and at least one transformer is formed integrally with, and thus from the constituent parts of, the connecting device. The transformer is composed of at least one transmitter coil and at least one receiver coil, which are in each case arranged coaxially with respect to one another and are formed with spiral windings.

Abstract: A method for making a power semiconductor module and a module produced by that method, wherein the module includes a substrate, a connection device and load terminal elements, wherein power semiconductor components are arranged on a conductor track of the substrate and connected to one of the load terminal element by the connection device. The power semiconductor module has auxiliary contact pads which can be connected to an external printed circuit board. The primary production step in this case is cohesively connecting respective first contact areas of the first conductor tracks to at least one second contact area of a power semiconductor component and at least one third contact area of a load terminal element; afterwards, the assemblage composed of at least one power semiconductor component of a connection device and load terminal elements is arranged to form a housing of the power semiconductor module.

Abstract: A power semiconductor module comprises at least one power semiconductor component and a connection device which makes contact with the power semiconductor component. The connection device is composed of a layer assembly having at least one first electrically conductive layer facing the power semiconductor component and forming at least one first conductor track, and an insulating layer following in the layer assembly, and a second layer following further in the layer assembly and forming at least one second conductor track, the second layer being remote from the power semiconductor component. The power semiconductor module has at least one internal connection element, wherein the internal connection element is embodied as a contact spring having a first and a second contact section and a resilient section. The first contact section has a common contact area with a first or a second conductor track of the connection device.

Abstract: A power semiconductor module comprising: a substrate, a plurality of conductor tracks arranged thereon, the conductor tracks being electrically insulated from one another, and including power semiconductor components arranged thereon; a connecting device, composed of an alternating layer sequence of at least two electrically conductive layers and at least one electrically insulating layer disposed therebetween, for the circuit-conforming connection of the power semiconductor components, the conductor tracks and/or external contact devices. The electrically conductive layers form connecting tracks and at least one transformer is formed integrally with, and thus from the constituent parts of, the connecting device. The transformer is composed of at least one transmitter coil and at least one receiver coil, which are in each case arranged coaxially with respect to one another and are formed with spiral windings.

Abstract: A power semiconductor module is presented. The power semiconductor module includes a plurality of capacitors coupled in parallel with each other. Each of the plurality of capacitors each includes a first and a second connection element. The power semiconductor module further includes a first and a second busbar. The first connection element of each of the plurality of capacitors is bonded to the first busbar, and the second connection element of each of the plurality of capacitors is bonded to the second busbar. The power semiconductor module further includes an insulating element disposed between the first busbar and the second busbar, and a pressure assembly that includes at least one pressure body and one associated counterpart pressure body. The first connection element and the second connection element of each of the plurality of capacitors is subjected to pressure and electrically bonded to the associated busbars by the pressure assembly.

Abstract: A power semiconductor component having a basic body and at least one contact area. At least one first thin metallic layer of a first material is arranged on the contact area. A second metallic layer—thicker than the first—of a second material is arranged on the first material by a pressure sintering connection of said material. The associated method has the following steps: producing a plurality of power semiconductor components in a wafer; applying at least one first thin metallic layer on at least one contact area of a respective power semiconductor component; arranging a pasty layer, composed of the second material and a solvent, on at least one of the first metallic layers for each power semiconductor component; pressurizing the pasty layer; and singulating the semiconductor components.

Abstract: A power semiconductor module is presented. The power semiconductor module includes a plurality of capacitors coupled in parallel with each other. Each of the plurality of capacitors each includes a first and a second connection element. The power semiconductor module further includes a first and a second busbar. The first connection element of each of the plurality of capacitors is bonded to the first busbar, and the second connection element of each of the plurality of capacitors is bonded to the second busbar. The power semiconductor module further includes an insulating element disposed between the first busbar and the second busbar, and a pressure assembly that includes at least one pressure body and one associated counterpart pressure body. The first connection element and the second connection element of each of the plurality of capacitors is subjected to pressure and electrically bonded to the associated busbars by the pressure assembly.

Abstract: A circuit arrangement includes a base body, with one or more substrates, an intermediate-circuit board, a compression device and a driver circuit. Each substrate includes a positive-pole conductive strip, a negative-pole conductive strip, and auxiliary connections. Components such as power transistors, are in contact with the conductive strips and the auxiliary connections. The intermediate-circuit board includes a positive-pole DC connection and negative-pole DC connection and electrical capacitors connected between them. An AC connection element that must be cooled is assigned to each substrate. The positive-pole DC connection and the negative-pole DC connection include contacts for direct low-inductance connection with the corresponding conductive strips of the one or more substrates. The equivalent applies to the one or more AC connection elements.

Abstract: The invention in the simplest form is a power conditioning and inverting system for improved and efficient power generation. In particular, the present invention is a modulated dc link scheme that dramatically reduces the switching frequency ripple across the PWM output filter inductor and provides cost, size, and weight reductions, as well as efficiency enhancements. In a preferred embodiment of the present invention, the DC-DC converter control takes a feedback signal proportional to the inverter output voltage. This feedback is “summed” into the primary DC-DC volts command thereby causing the dc bus/link voltage to vary at a multiple of the output fundamental frequency causing the DC link to become a signal at a fundamental frequency voltage with a dc offset. The tooth modulator DC supply tracks the AC output voltage, reducing the difference between the applied DC volts and the AC output volts, thereby reducing inductor core losses.

Abstract: The invention in the simplest form is a power conditioning and inverting system for improved and efficient power generation. In particular, the present invention is a modulated dc link scheme that dramatically reduces the switching frequency ripple across the PWM output filter inductor and provides cost, size, and weight reductions, as well as efficiency enhancements. In a preferred embodiment of the present invention, the DC-DC converter control takes a feedback signal proportional to the inverter output voltage. This feedback is “summed” into the primary DC-DC volts command thereby causing the dc bus/link voltage to vary at a multiple of the output fundamental frequency causing the DC link to become a signal at a fundamental frequency voltage with a dc offset. The tooth modulator DC supply tracks the AC output voltage, reducing the difference between the applied DC volts and the AC output volts, thereby reducing inductor core losses.

Abstract: A circuit arrangement includes a base body, with one or more substrates, an intermediate-circuit board, a compression device and a driver circuit. Each substrate includes a positive-pole conductive strip, a negative-pole conductive strip, and auxiliary connections. Components such as power transistors, are in contact with the conductive strips and the auxiliary connections. The intermediate-circuit board includes a positive-pole DC connection and negative-pole DC connection and electrical capacitors connected between them. An AC connection element that must be cooled is assigned to each substrate. The positive-pole DC connection and the negative-pole DC connection include contacts for direct low-inductance connection with the corresponding conductive strips of the one or more substrates. The equivalent applies to the one or more AC connection elements.