Abstract: A multiple-junction photoelectric device includes sequentially, a substrate, a first conducting layer, at least two elementary photoelectric devices, at least one of the elementary photoelectric devices being made of microcrystalline silicon, and a second conducting layer. The first conducting layer has a surface facing the microcrystalline silicon elementary photoelectric device such that the surface: has a lateral feature size bigger than 100 nm, and a root-element-square roughness bigger than 40 nm, includes inclined elementary surfaces such that ?50 is greater than 20°, where ?50 is the angle for which 50% of the elementary surfaces of the surface of the first conducting layer have an inclination equal to or less than this angle, and includes valleys formed between two elementary surfaces and having a radius of curvature smaller than 100 nm.

Abstract: A multiple-junction photoelectric device includes sequentially, a substrate, a first conducting layer, at least two elementary photoelectric devices, at least one of the elementary photoelectric devices being made of microcrystalline silicon, and a second conducting layer. The first conducting layer has a surface facing the microcrystalline silicon elementary photoelectric device such that the surface: has a lateral feature size bigger than 100 nm, and a root-element-square roughness bigger than 40 nm, includes inclined elementary surfaces such that ?50 is greater than 20°, where ?50 is the angle for which 50% of the elementary surfaces of the surface of the first conducting layer have an inclination equal to or less than this angle, and includes valleys formed between two elementary surfaces and having a radius of curvature smaller than 100 nm.

Abstract: A multiple-junction photoelectric device includes a substrate with a first conducting layer thereon, at least two elementary photoelectric devices of p-i-n or p-n configuration, with a second conducting layer thereon, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, opposite top and bottom faces, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so ?90bottom is smaller than ?90top by at least 3°, preferably 6°, more preferably 10°, and even more preferably 15°; where ?90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination equal to or less than this angle, and ?90bottom is the angle for which 90% of the elementary surfaces of the bottom face of the intermediate layer have an inclination equal to or less than this angle.

Abstract: A multiple-junction photoelectric device includes a substrate with a first conducting layer thereon, at least two elementary photoelectric devices of p-i-n or p-n configuration, with a second conducting layer thereon, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, opposite top and bottom faces, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so ?90bottom is smaller than ?90top by at least 3°, preferably 6°, more preferably 10°, and even more preferably 15°; where ?90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination equal to or less than this angle, and ?90bottom is the angle for which 90% of the elementary surfaces of the bottom face of the intermediate layer have an inclination equal to or less than this angle.