Patents by Inventor Peter D. Greene

Peter D. Greene has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5017974
    Abstract: A quantum confined Stark effect (QCSE) optical modulator element has one or more quantum wells each bounded by assymetric barriers. This provides a device in which the direction and magnitude of the electric field induced absorption edge shift corresponds to the polarity and intensity of an applied electric field.
    Type: Grant
    Filed: April 26, 1990
    Date of Patent: May 21, 1991
    Assignee: STC plc
    Inventor: Peter D. Greene
  • Patent number: 4717443
    Abstract: A mass transport process for use in the manufacture of semiconductor devices, particularly but not exclusively low threshold semiconductor lasers in the InP/InGaAsP system, involves the arrangement of a cover wafer (18) of the material to be grown adjacent to a semiconductor wafer (15) on which the material is to be grown, their disposition together with a crystalline alkali halide (20) in a crucible (16), and heating the crucible, which is almost but not completely sealed, in a hydrogen stream.For the manufacture of InP/InGaAsP lasers and the growth of InP, the alkali halide may comprise KI, RbI or CsI and a controlled amount of In metal (21) may be optionally contained in the crucible (16) to control the balance between growth of InP for defining the laser active region and erosion of InP from other areas of the wafer. Growth is achieved at temperatures comparable with liquid phase epitaxy processing temperatures.
    Type: Grant
    Filed: May 20, 1985
    Date of Patent: January 5, 1988
    Assignee: Standard Telephones and Cables, PLC
    Inventors: Peter D. Greene, Daniel S. O. Renner
  • Patent number: 4509996
    Abstract: A method of making a channel substrate buried heterostructure InP/(In,Ga)(As,P) laser avoids the need to use two separate stages of epitaxial growth by using a channel in a (100) surface substrate 1 extending in the [011] direction with {111}B sides. This allows the channel to be made before the growth of an (In,Ga)(As,P) blocking layer 3 which can be grown under conditions which do not require the use of a mask to prevent nucleation on the channel sides. The same technique is also applicable to the manufacture of a terraced substrate laser incorporating a blocking layer.
    Type: Grant
    Filed: June 24, 1983
    Date of Patent: April 9, 1985
    Assignee: International Standard Electric Corporation
    Inventors: Peter D. Greene, Stephen E. H. Turley
  • Patent number: 4398342
    Abstract: A Hall effect device comprises a thin substrate free epitaxially grown semiconductor body mounted in a magnetically permeable, e.g. ferrite, housing. The layer, which is preferably gallium arsenide or gallium indium arsenide, is grown on a substrate which, after device processing is complete, is removed by a selective etching process. In view of the relatively high sensitivity and good noise characteristics such a device with its flux concentrator is small, since the flux concentrators are themselves much smaller than with conventional Hall effect systems. Other semiconductor materials from which the novel thin Hall effect devices can be made include silicon.
    Type: Grant
    Filed: February 22, 1982
    Date of Patent: August 16, 1983
    Assignee: International Standard Electric Corporation
    Inventors: Gillies D. Pitt, Peter D. Greene, Edward J. Thrush, David H. Whysall