Abstract: A platform and process for electronic payment processing using electronic communications from different communication channels or bands. The system and process can generate alerts using fraud detection and verify payment requests using historical data and pattern recognition. The system and process can categorize images and extract payment data.

Abstract: A platform and process for electronic payment processing using electronic communications from different communication channels or bands. The system and process can generate alerts using fraud detection and verify payment requests using historical data and pattern recognition. The system and process can categorize images and extract payment data.

Abstract: A platform and process for electronic payment processing using electronic calendars and communications from a set of connected servers with logic code to automate machine operations relating to electronic payments. The system and process can generate alerts using fraud detection and verify payment requests using historical data and pattern recognition. The electronic calendar can be integrated into an electronic wallet application.

Abstract: A platform and process for electronic payment processing using electronic calendars and communications from a set of connected servers with logic code to automate machine operations relating to electronic payments. The system and process can generate alerts using fraud detection and verify payment requests using historical data and pattern recognition. The electronic calendar can be integrated into an electronic wallet application.

Abstract: A platform and process for electronic payment processing using electronic calendars and communications from with logic code to automate machine operations relating to electronic payments. The system and process can generate alerts using fraud detection and verify payment requests using historical data and pattern recognition. The electronic calendar can be integrated into an electronic wallet application.

Abstract: A platform and process for electronic payment processing using electronic communications from different communication channels or bands. The system and process can generate alerts using fraud detection and verify payment requests using historical data and pattern recognition. The system and process can categorize images and extract payment data.

Abstract: The present invention relates to a cermet body composition for the preparation of novel cermet materials to be used in solid oxide fuel cells. The cermet body composition comprises a ceramic component and a metallic component, wherein the ceramic component is in the range of 5% to 95% by wt of the cermet body.

Abstract: A method for synthesis of nanostructured metal oxide powders. The method comprises converting the metallic material into a precipitate of metal hydroxide by an electrochemical reaction and calcinating the metal hydroxide to form the metal oxides. The method of the invention is also used for the development of cermet particulates and topological insulator particles.

Abstract: The present invention relates to a cermet body composition for the preparation of novel cermet materials to be used in solid oxide fuel cells. The cermet body composition comprises a ceramic component and a metallic component, wherein the ceramic component is in the range of 5% to 95% by wt of the cermet body.

Abstract: A method for synthesis of nanostructured metal oxide powders. The method comprises converting the metallic material into a precipitate of metal hydroxide by an electrochemical reaction and calcinating the metal hydroxide to form the metal oxides. The method of the invention is also used for the development of cermet particulates and topological insulator particles.

Abstract: A new method of forming shallow trench isolations without using CMP is described. A plurality of isolation trenches are etched through an etch stop layer into the semiconductor substrate leaving narrow and wide active areas between the trenches. An oxide layer is deposited over the etch stop layer and within the trenches using a high density plasma chemical vapor deposition process (HDP-CVD) having a deposition component and a sputtering component wherein after the oxide layer fills the trenches, the deposition component is discontinued while continuing the sputtering component until the oxide layer is at a desired depth. In one method, the oxide layer overlying the etch stop layer in the wide active areas is etched away. The etch stop layer and oxide layer residues are removed to complete planarized STI regions.

Abstract: A new method of forming shallow trench isolations without using CMP is described. A plurality of isolation trenches are etched through an etch stop layer into the semiconductor substrate leaving narrow and wide active areas between the trenches. An oxide layer is deposited over the etch stop layer and within the trenches using a high density plasma chemical vapor deposition process (HDP-CVD) having a deposition component and a sputtering component wherein after the oxide layer fills the trenches, the deposition component is discontinued while continuing the sputtering component until the oxide layer is at a desired depth. In one method, the oxide layer overlying the etch stop layer in the wide active areas is etched away. The etch stop layer and oxide layer residues are removed to complete planarized STI regions.

Abstract: A process for forming insulator filled, shallow trench isolation (STI), regions in a semiconductor substrate, featuring a disposable polysilicon stop layer used to allow uniform insulator fill to be obtained, independent of shallow trench width, has been developed. The process features filling shallow trench shapes with a first high density plasma (HDP), deposited silicon oxide layer, followed by the deposition of the thin polysilicon stop layer, and a second HDP silicon oxide layer. After a planarizing chemical mechanical polishing procedure residual regions of the second HDP silicon oxide, still remaining in regions overlying the insulator filled shallow trench shapes, are selectively removed using the thin polysilicon layer as a stop layer. The polysilicon layer is then thermally oxidized. The thickness of the polysilicon layer can be varied such that the resultant polysilicon oxide layer serves to alleviate the possible oxide loss in the STI regions during subsequent clean processes.

Abstract: A method of forming shallow trench isolations is described. An etch stop layer is deposited on the surface of a semiconductor substrate. A plurality of isolation trenches are etched through the etch stop layer into the semiconductor substrate to separate active areas. An oxide layer is deposited over the etch stop layer and within the isolation trenches wherein the oxide fills the isolation trenches and overlies the etch stop layer on the active areas. A polysilicon layer is deposited overlying the oxide layer within the isolation trenches and the oxide layer overlying the etch stop layer. The polysilicon layer is polished away until the oxide layer overlying the etch stop layer is exposed and the polysilicon layer remains only overlying the oxide layer in the isolation trenches. The polysilicon layer is oxidized whereby the oxidized polysilicon layer has a height close to the height of the oxide layer overlying the etch stop layer.

Abstract: A sealing composition is provided for joining crystalline ceramic or cermet parts, e.g. in an arc tube for a discharge lamp. The sealing composition comprises, as starting materials, a mixture of alumina (Al.sub.2,O.sub.3), silica (SiO.sub.2) and magnesia (MgO), the mixture comprising in the ranges of from 22% to 24.5% by weight of Al.sub.2 O.sub.3, from 45.5% to 49.5% by weight of SiO.sub.2, and from 26.0% to 32.5% by weight of MgO. The sealing composition contains less than 40% by weight, of the mixture, of the crystalline phase .alpha.-Cordierite when subjected to the following test procedure.(i) sintering the mixture at 1200.degree. C. for 10 hours to produce a friable lump which is crunched and heated at 1550.degree. C. for 2 hours while the glass is in a molten condition;(ii) pouring the resulting material into water to form a brittle frit and, after drying at 160.degree. C., grinding the glass to a powder particle less than 180 .mu.

Abstract: An arc discharge lamp is provided using sealing compositions comprising mainly Al.sub.2 O.sub.3 --SiO.sub.2 --MgO. Preferred compositions include between 25 to 28% by weight of MgO and 13 to 21% by weight of Al.sub.2 O.sub.3 since these have lower melting points than others in the group. The sealing compositions are used to seal end closure members of alumina or cermet to ceramic arc tubes for use in discharge lamps. The compositions are selected to have linear expansion co-efficients compatible with the materials of the end closures and arc tubes. The methods described give sealing times of between 3 and 4 minutes.

Abstract: An arc discharge lamp is provided using sealing compositions comprising mainly Al.sub.2 O.sub.3 --SiO.sub.2 --MgO. Preferred compositions include between 25 to 28% by weight of MgO and 13 to 21% by weight of Al.sub.2 O.sub.3 since these have lower melting points than others in the group. Additives of B.sub.2 O.sub.3, nucleating agents and HfO.sub.2 and other rare earth oxides are preferred. The sealing compositions are used to seal end closure members of alumina or CERMET to ceramic arc tubes for use in discharge lamps. The compositions are selected to have linear expansion co-efficients compatible with the materials of the end closures and arc tubes. The methods described give scaling times of between 3 and 4 minutes.

Abstract: An electrically conducting cermet for use in a closure assembly in a high pressure sodium discharge lamp which cermet comprises a sintered compact of refractory oxide granules and a conducting network extending throughout the cermet wherein said network is provided by a layer of niobium and, optionally, at least one other specified metal. The cermet is, because of the niobium content of the metallic network, permeable to hydrogen and lamps incorporating this cermet can therefore be stabilized in acceptable times.

Abstract: The invention provides a method of producing discharge lamp arc tubes of ceramic material complete with metal cermet end closure members using initially incompletely fired sintered components and a sealing composition selected from silica, alumina and magnesia in proportions such that the composition falls within the accompanying ternary phase diagram BCDEFXYZPQ. The sealing compositions may also contain up to 5% by weight of nucleating agents such as phosphorous pentoxide, rare earth oxides, titania, zirconia or chromia. The inclusion of up to 5% by weight of boric oxide improves the flow characteristics and up to 10% by weight of Y.sub.2 O.sub.3, Yb.sub.2 O.sub.3, La.sub.2 O.sub.3, Dy.sub.2 O.sub.3, Eu.sub.2 O.sub.3, HfO.sub.2 improves the thermal and mechanical properties of the seals. The invention eliminates the need to make a first end seal by separate sintering and sealing operations.

Abstract: An electrically conducting cermet comprises a sintered compact of refractory oxide granules such as alumina granules having diameters of from 50 to 800 microns and a conductive network extending through the cermet and provided by a layer of one or more of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, iron, cobalt or nickel surrounding the individual oxide granules and constituting a volume fraction of 0.04 to 0.2 of the total cermet, wherein particles of one or more of said metals are dispersed within the oxide granules in a volume fraction of 0.01 to 0.15 of the granules, which granules also contain 0.01 to 0.25 percent by weight of magnesium oxide.