Patents by Inventor Peter J. Hoppet

Peter J. Hoppet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Avalanche diode with breakdown voltage controlled by gate length
    Patent number: 7056761
    Abstract: In an avalanche structure, different breakdown voltages are achieved by making use of a polygate and forming a highly doped p-n junction beneath the polygate, and adjusting the gate length and optionally the bias voltage of the gate.
    Type: Grant
    Filed: March 14, 2003
    Date of Patent: June 6, 2006
    Assignee: National Semiconductor Corporation
    Inventors: Vladislav Vashchenko, Ann Concannon, Peter J. Hoppet, Marcel ter Beek