Abstract: A sampling device adapted for mounting on a conventional microsampling apparatus for infrared spectroscopy is arranged to sample a plurality of different samples of unknown material during one operation. The device supports by a clamp an IR-transparent substrate on which solutions of samples are deposited. After evaporation of the solvent, the residue of unknown material is analyzed by conventional spectroscopy procedures. Each of the plurality of such samples deposited on the substrate are manually rotated into and out of exposure to the IR beam of the apparatus for rapid analysis.

Abstract: The surface quality of a semiconductor material is determined by exposing the semiconductor surface to two light beams of different wavelengths or wavelength ranges (e.g. ultraviolet and near ultraviolet). A portion of each of the respective light beams is reflected from the semiconductor surface. The intensity of each reflected beam is measured to obtain an intensity difference whereby the magnitude of the difference is a measure of the quality of the semiconductor material.

Abstract: The surface quality of a semiconductor material is determined by exposing the semiconductor surface to two light beams of different wavelengths or wavelength ranges (e.g. ultraviolet and near ultraviolet). A portion of each of the respective light beams is reflected from the semiconductor surface. The intensity of each reflected beam is measured to obtain an intensity difference whereby the mangitude of the difference is a measure of the quality of the semiconductor material.

Abstract: A method of inducing differential etch rates in glow discharge produced amorphous silicon by heating a portion of the glow discharge produced amorphous silicon to a temperature of about 365.degree. C. higher than the deposition temperature prior to etching. The etch rate of the exposed amorphous silicon is less than the unheated amorphous silicon.