Abstract: This specification discloses methods of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. In one embodiment the resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1?xLi3?2yAl1+y?zSizO4?4y?zN4y+z:Eux (AE=Ca, Sr, Ba, or a combination thereof, 0<x<0.04, 0?y<1, 0<z<0.05, y+z?1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.

Abstract: The invention provides a method for providing a luminescent particle with a hybrid coating, the method comprising: (i) providing a luminescent core comprising a primer layer on the luminescent core; (ii) providing a main ALD coating layer onto the primer layer by application of a main atomic layer deposition process, the main ALD coating layer comprising a multilayer with two or more layers having different chemical compositions, and wherein in the main atomic layer deposition process a metal oxide precursor is selected from a group of metal oxide precursors comprising Al, Zn, Hf, Ta, Zr, Ti, Sn, Nb, Y, Ga, and V; (iii) providing a main sol-gel coating layer onto the main ALD-coating layer by application of a main sol-gel coating process, the main sol-gel coating layer having a chemical composition different from one or more of the layers of the multilayer.

Abstract: The invention provides a method for providing a luminescent particle (100) with a hybrid coating, the method comprising: (i) providing a luminescent core (102) comprising a primer layer (105) on the luminescent core (102); (ii) providing a main ALD coating layer (120) onto the primer layer (105) by application of a main atomic layer deposition process, the main ALD coating layer (120) comprising a multilayer (1120) with two or more layers (1121) having different chemical compositions, and wherein in the main atomic layer deposition process a metal oxide precursor is selected from a group of metal oxide precursors comprising Al, Zn, Hf, Ta, Zr, Ti, Sn, Nb, Y, Ga, and V; (iii) providing a main sol-gel coating layer (130) onto the main ALD-coating layer (120) by application of a main sol-gel coating process, the main sol-gel coating layer (130) having a chemical composition different from one or more of the layers (1121) of the multilayer (1120).

Abstract: Embodiments of the invention include an infrared-emitting phosphor comprising (La,Gd)3Ga5?x?yAlxSiO14:Cry, where 0?x?1 and 0.02?y?0.08. In some embodiments, the infrared-emitting phosphor is a calcium gallogermanate material. In some embodiments, the infrared-emitting phosphor is used with a second infrared-emitting phosphor. The second infrared-emitting phosphor is one or more chromium doped garnets of composition Gd3?x1Sc2?x2?yLux1+x2Ga3O12:Cry, where 0.02?x1?0.25, 0.05?x2?0.3 and 0.04?y?0.12.

Abstract: A method of forming a nitridophosphate is disclosed, the method including forming a precursor mixture by combining a metal source material, a phosphorus source material, and a nitrogen source material, and heating the precursor mixture at a maximum temperature between 800° C. and 1300° C. in an atmosphere including nitrogen gas at a pressure between 2 MPa and 500 MPa.

Abstract: In a method according to embodiments of the invention, for a predetermined amount of light produced by a light emitting diode and converted by a phosphor layer comprising a host material and a dopant, and for a predetermined maximum reduction in efficiency of the phosphor at increasing excitation density, a maximum dopant concentration of the phosphor layer is selected.

Abstract: An inorganic coating may be applied to bond optically scattering particles or components. Optically scattering particles bonded via the inorganic coating may form a three dimensional film which can receive a light emission, convert, and emit the light emission with one or more changed properties. The inorganic coating may be deposited using a low-pressure deposition technique such as an atomic layer deposition (ALD) technique. Two or more components, such as an LED and a ceramic phosphor layer may be bonded together by depositing an inorganic coating using the ALD technique.

Abstract: The invention provides a method for providing a luminescent particle (100) with a hybrid coating, the method comprising: (i) providing a luminescent core (102) comprising a primer layer (105) on the luminescent core (102); (ii) providing a main ALD coating layer (120) onto the primer layer (105) by application of a main atomic layer deposition process, the main ALD coating layer (120) comprising a multilayer (1120) with two or more layers (1121) having different chemical compositions, and wherein in the main atomic layer deposition process a metal oxide precursor is selected from a group of metal oxide precursors comprising Al, Zn, Hf, Ta, Zr, Ti, Sn, Nb, Y, Ga, and V; (iii) providing a main sol-gel coating layer (130) onto the main ALD-coating layer (120) by application of a main sol-gel coating process, the main sol-gel coating layer (130) having a chemical composition different from one or more of the layers (1121) of the multilayer (1120).

Abstract: A luminescent material is disclosed with emission in the near infrared wavelength range, the luminescent material including Sc1-x-yAyRE:Crx, wherein MO=P3O9, BP3O12, SiP3O12; A=Lu, In, Yb, Tm, Y, Ga, Al, where 0?x?0.75, 0?y?0.9. A wavelength converting structure including the luminescent phosphor is also disclosed.

Abstract: A wavelength converting structure is provided, the wavelength converting structure including an SWIR phosphor having emission wavelengths in the range of 1600-2200 nm, the SWIR phosphor comprising a structurally disordered garnet material, a sensitizer ion, and at least one rare earth emitter ion. Also provided is a luminescent material having emission wavelength in the range of 1600-2200 nm, the luminescent material including (Gd3-u-v-x-y-zLuxTmyHozScvREu)[Sc2-a-bLuaCrbGadAle]{Ga3-cAlc}O12 with RE=La, Y, Yb, Nd, Er, Ce and 0?u?2, 0<v?1, 0<x?1, 0<y?0.5, 0?z?0.05, 0<a?1, 0<b?0.3, 0?c?3, 0<d?1.8, 0?e?1.8. An IR emitting device including the luminescent material may provide a broad-band emission in the wavelength range of 1600-2200 nm with a continuous emission spectrum over a spectral width of at least 500 nm.

Abstract: A luminescent material is disclosed with emission in the near infrared wavelength range, the luminescent material including Sc1-x-yAyRE:Crx, wherein MO=P3O9, BP3O12, SiP3O12; A=Lu, In, Yb, Tm, Y, Ga, Al, where 0?x?0.75, 0?y?0.9. A wavelength converting structure including the luminescent phosphor is also disclosed.

Abstract: An inorganic coating may be applied to bond optically scattering particles or components. Optically scattering particles bonded via the inorganic coating may form a three dimensional film which can receive a light emission, convert, and emit the light emission with one or more changed properties. The inorganic coating may be deposited using a low-pressure deposition technique such as an atomic layer deposition (ALD) technique. Two or more components, such as an LED and a ceramic phosphor layer may be bonded together by depositing an inorganic coating using the ALD technique.

Abstract: This specification discloses methods of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. In one embodiment the resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1?xLi3?2yAl1+y?zSizO4?4y?zN4y+z:Eux (AE=Ca, Sr, Ba, or a combination thereof, 0<x<0.04, 0?y<1, 0<z<0.05, y+z?1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.

Abstract: A wavelength converting structure is disclosed, the wavelength converting structure including an SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including at least one of a perovskite type phosphor doped with Ni2+, a perovskite type phosphor doped with Ni2+ and Cr3+, and a garnet type phosphor doped with Ni2+ and Cr3+.

Abstract: The invention provides luminescent material comprising E1-wSc1-x-y-u-wMyZuA2wSi2-z-uGezAluO6:Crx, wherein: E comprises one or more of Li, Na, and K; M comprises one or more of Al, Ga, In, Tm, Yb, and Lu; Z comprises one or more of Ti, Zr, and Hf; A comprises one or more of Mg, Zn, and Ni; 0<x?0.25; 0?y?0.75; 0?z?2; 0?u?1; 0?w?1; x+y+u+w?1; and z+u?2.

Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.

Abstract: This specification discloses a method of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1?xLi3?2yAl1+2y?zSizO4?4y?zN4y+z:EUx(AE=Ca, Sr, Ba; 0<x<0.04, 0?y<1, 0<z<0.05, y+z?1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.

Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.

Abstract: A method of fabricating closely spaced pcLEDs (100) arranged in a matrix array (200) of perpendicular rows and columns comprises an initial phosphor deposition step in which phosphor (803, 905) is deposited at alternating locations (pixels) in the matrix array in a checkerboard pattern, so that the locations (504) in the array at which phosphor (803, 905) is deposited are not adjacent to each other. In a subsequent phosphor deposition step phosphor is deposited at the alternating locations at which phosphor was not deposited in the first deposition step.

Abstract: The invention provides a method for providing a luminescent particle with a hybrid coating, the method comprising: (i) providing a luminescent core comprising a primer layer on the luminescent core; (ii) providing a main ALD coating layer onto the primer layer by application of a main atomic layer deposition process, the main ALD coating layer comprising a multilayer with two or more layers having different chemical compositions, and wherein in the main atomic layer deposition process a metal oxide precursor is selected from a group of metal oxide precursors comprising Al, Zn, Hf, Ta, Zr, Ti, Sn, Nb, Y, Ga, and V; (iii) providing a main sol-gel coating layer onto the main ALD-coating layer by application of a main sol-gel coating process, the main sol-gel coating layer having a chemical composition different from one or more of the layers of the multilayer.