Abstract: Provided herein are compositions and methods for preventing or reducing scar formation (e.g., hypertrophic scars). Certain embodiments provide a method of preventing hypertrophic scar formation in a subject comprising administering a HMG-CoA reductase-inhibiting agent to a wound site. In some embodiments, the wound site comprises scar tissue.

Abstract: A wafer carrier includes a pocket sized and shaped to accommodate a wafer, the pocket having a base and a substantially circular perimeter, and a removable orientation marker, the removable orientation marker comprising an outer surface and an inner surface, the outer surface having an arcuate form sized and shaped to mate with the substantially circular perimeter of the pocket, and the inner surface comprising a flat face, wherein the removable orientation marker further comprises a notch at a first end of the flat face.

Abstract: This disclosure provides systems, methods, and apparatus related to the determination of ecological processes. In one aspect, a device includes a base and a substrate in contact with a first side of the base. The base defines a stem port. The substrate and the first side of the base define a chamber. The chamber includes a root chamber and a first nutrient chamber. The root chamber and the first nutrient chamber are separated by a first mesh having openings of about 1 micron to 300 microns. The device is operable to house a plant, with roots of the plant being in the root chamber, and a stem of the plant passing through the stem port.

Abstract: In an embodiment, a wafer carrier includes a pocket sized and shaped to accommodate a wafer, the pocket being defined by a base and a substantially circular perimeter including an inner face and an outer face. The substantially circular perimeter includes a notch in the inner face.

Abstract: A type IV semiconductor substrate having a main surface is provided. A type III-V semiconductor channel region that includes a two-dimensional carrier gas is formed over the type IV semiconductor substrate. A type III-V semiconductor lattice transition region that is configured to alleviate mechanical stress arising from lattice mismatch is formed between the type IV semiconductor substrate and the type III-V semiconductor channel region. Forming the type III-V semiconductor lattice transition region includes forming a first lattice transition layer having a first metallic concentration over the type IV semiconductor substrate, forming a third lattice transition layer having a third metallic concentration that is higher than the first metallic concentration over the first lattice transition layer, and forming a fourth lattice transition layer having a fourth metallic concentration that is lower than the first metallic concentration over the third lattice transition layer.

Abstract: A machine trains a first neural network using a first set of images. Training the first neural network comprises computing a first set of weights for a first set of neurons. The machine, for each of one or more alpha values in order from smallest to largest, trains an additional neural network using an additional set of images. The additional set of images comprises a homographic transformation of the first set of images. The homographic transformation is computed based on the alpha value. Training the additional neural network comprises computing an additional set of weights for an additional set of neurons. The additional set of weights is initialized based on a previously computed set of weights. The machine generates a trained ensemble neural network comprising the first neural network and one or more additional neural networks corresponding to the one or more alpha values.

Abstract: A type IV semiconductor substrate having a main surface is provided. A type III-V semiconductor channel region that includes a two-dimensional carrier gas is formed over the type IV semiconductor substrate. A type III-V semiconductor lattice transition region that is configured to alleviate mechanical stress arising from lattice mismatch is formed between the type IV semiconductor substrate and the type III-V semiconductor channel region. Forming the type III-V semiconductor lattice transition region includes forming a first lattice transition layer having a first metallic concentration over the type IV semiconductor substrate, forming a third lattice transition layer having a third metallic concentration that is higher than the first metallic concentration over the first lattice transition layer, and forming a fourth lattice transition layer having a fourth metallic concentration that is lower than the first metallic concentration over the third lattice transition layer.

Abstract: A computer architecture for artificial image generation is disclosed. According to some aspects, a computing machine receives a voxel model of a target object. The target object is to be recognized using an image recognizer. The computing machine generates, based on the voxel model, a set of TSB (target shadow background-mask) images of the target object. The computing machine receives, at an auto-encoder, a set of real images of the target object. The computing machine generates, using an auto-encoder and based on the set of real images, one or more artificial images of the target object based on the set of TSB images. The computing machine provides, as output, the generated one or more artificial images of the target object.

Abstract: A dynamic reconfiguration training machine learning computer architecture is disclosed. According to some aspects, a computing machine accesses a configuration file. The configuration file specifies parameters for a machine learning session. The computing machine trains a machine learning module to solve a problem, where the machine learning module operates according to the parameters specified in the configuration file. The computing machine generates an output representing the trained machine learning module.

Abstract: A computer architecture for artificial image generation is disclosed. According to some aspects, a computing machine receives a voxel model of a first set of objects different from a target object. The target object is to be recognized using an image recognizer. The computing machine generates, based on the voxel model, a set of TSB (target shadow background-mask) images of the first set of objects. The computing machine receives, at an auto-encoder, a set of real images of the first set of objects. The computing machine generates, using the auto-encoder, one or more artificial images of the target object based on the set of TSB images. The auto-encoder learns differences between the target object and the first set of objects. The computing machine provides, as output, the generated one or more artificial images of the target object.

Abstract: In one aspect, methods of sensing are described herein. In some embodiments, a method of sensing includes disposing a fluorophore in a biological environment, wherein the fluorophore includes a dioxo-pyridine ring (DPR) or a thiazolopyridine acid (TPA). The method further includes exposing the biological environment to electromagnetic radiation having a wavelength corresponding to an excitation wavelength of the fluorophore, detecting light emitted by the fluorophore, and correlating the light emitted by the fluorophore to a presence or absence of an analyte within the biological environment in an amount above a minimum detection threshold. The presence of the analyte can increase or decrease the amount of light emitted by the fluorophore. The presence of the analyte may also shift the peak emission wavelength or alter the fluorescence lifetime of the fluorophore. The analyte, in some embodiments, includes hydrogen ions, halide ions, and/or halogens.

Abstract: Provided is a wind powered system which includes a plurality of wind tunnels, a plurality of rotary fans provided in each wind tunnel, a plurality of alternators connected to the plurality of rotary fans to generate electricity, a transformer connected to the plurality of alternators, electric components connected to the transformer, and a battery connected to the transformer and the electric components. The transformer is supplied with the electricity generated by the alternators and outputs electrical energy with a voltage to be supplied to at least one of the electric components and the battery. The plurality of wind tunnels have a plurality of intake inlets which are separated and apart from each other and a single outlet shared by the plurality of wind tunnels.

Abstract: The present invention generally relates to the field of cell growth and tissue engineering, in particular, an engineered biomimetic culture platform (BCP) that has a nanotextured and micropatterned surface that provides both chemical and mechanical cues designed to mimic the structure of the in vivo extracellular micro-environment. The BCP can be used in assays to assess the migratory behavior and/or potential of a population of cells, such as tumor cells, as well as in screening assays for diagnostic and/or prognostic purposes, or to identify agents that modify the migratory behavior or the epithelial-to-mesenchymal transition (EMT) of cells. BCPs as described herein further provide a platform for the identification of protein or genetic targets for the modification of cell migratory or invasion behavior.

Abstract: System and method for tracking and control in medical procedures. The system including a device that deploys fluorescent material on at least one of an organ under surgery and a surgical tool, a visual light source, a fluorescent light source corresponding to an excitation wavelength of the fluorescent material, an image acquisition and control element that controls the visual light source and the fluorescent light source, and captures and digitizes at least one of resulting visual images and fluorescent images, and an image-based, tracking module that applies image processing to the visual and fluorescent images, the image processing detecting fluorescent markers on at least one of the organ and the surgical tool.

Abstract: A low-pressure operation conforming membrane for manufacturing an article of footwear includes a perimeter portion having a thickness in a range of 1 to 15 millimeters forming an outer perimeter of the conforming membrane. The conforming membrane also includes a transition portion having a thickness in a range of 1 to 4 millimeters between a first surface and a second surface with the transition portion extending interior to the outer perimeter. The conforming membrane also includes a conforming portion extending from the transition portion in a direction of the second surface and forming a receiving cavity, the conforming portion having a thickness in a range of 1 to 4 millimeters. The perimeter portion, the transition portion, and the conforming portion are a unitary construction comprising a common material composition.

Abstract: The present disclosure is related to a method and apparatus for providing recommendation for a medical surgical procedure, including acquiring, using circuitry, a plurality of multispectral images representing a portion of an anatomy of a patient, performing image processing on each of the plurality of multispectral images to form a plurality of value maps, each value map identifying aspects of the portion of the anatomy by assigned values, combining the plurality of value maps into a single recommendation map, determining optimal points for performing the medical surgical procedure based on the single recommendation map, and displaying the optimal points for the medical surgical procedure by overlaying the optimal points on an original image of the portion of the anatomy or applying the optimal points to a robotic medical surgical procedure.

Abstract: A type IV semiconductor substrate having a main surface is provided. A type III-V semiconductor channel region that includes a two-dimensional carrier gas is formed over the type IV semiconductor substrate. A type III-V semiconductor lattice transition region that is configured to alleviate mechanical stress arising from lattice mismatch is formed between the type IV semiconductor substrate and the type III-V semiconductor channel region. Forming the type III-V semiconductor lattice transition region includes forming a first lattice transition layer having a first metallic concentration over the type IV semiconductor substrate, forming a third lattice transition layer having a third metallic concentration that is higher than the first metallic concentration over the first lattice transition layer, and forming a fourth lattice transition layer having a fourth metallic concentration that is lower than the first metallic concentration over the third lattice transition layer.

Abstract: Provided is a wind powered system which provides electrical energy to a vehicle using wind flow through wind tunnels. The system includes a plurality of ducts or wind tunnels each of which accommodates a plurality of rotary fans which are connected to a corresponding one of a plurality of alternators. A pulling fan and a motor connected to the pulling fan are provided to pull and move the wind throughout the ducts.

Abstract: In an embodiment, a wafer carrier includes a pocket sized and shaped to accommodate a wafer, the pocket being defined by a base and a substantially circular perimeter including an inner face and an outer face. The substantially circular perimeter includes a notch in the inner face.