Abstract: An optical information storage medium comprising a thin, optically darkenable film containing silver, lead, chlorine and oxygen, produced by vapor-depositing AgCl and PbO in specified proportions on a substrate for the film, is described.

Abstract: A photosensitive medium suitable for storing positive images and a method of using it are provided, the medium being a multilayer film comprising SnO.sub.2 and doped silver chloride and the method comprising an exposure step for negative imaging and a heating step for image reversal.

Abstract: Methods for making photosensitive thin film structures comprising one or more metal-dielectric layers, produced by the sequential deposition of discontinuous metal island films and transparent covering films containing selected dielectric acceptor materials, and the use of the photosensitive thin film structures to record full-color and/or dichroic images, are described.

Abstract: An ultraviolet-sensitive optical information recording material comprising doped silver chloride and tin oxide which exhibits high ultraviolet darkening sensitivity and good resistance to darkening or bleaching by visible light, and a method for optically recording information in permanent, optically-readable form in such a material by direct writing without chemical development, are described.

Abstract: Electron beam-sensitive films containing silver chloride, cadmium chloride and tin oxide, and the use of such films to provide optical masks by selective film darkening with an electron beam, are described.

Abstract: A photosensitive medium for storing optical information relating to the intensity and polarization of incident light, consisting of an inorganic multilayer film comprising multiple thin layers of silver chloride to which additive coloration has been imparted by chemical means, is described.

Abstract: Optically bleachable multilayer films containing additively colored silver chloride which exhibit high infrared transmittance and good bleaching sensitivity, and optical information storage media incorporating such films, are described.

Abstract: A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having a non-tantalum electrically conductive film electrode formed thereon is disposed within a vacuum environment. A film of tantalum oxide is applied over the conductive film within the vacuum environment. The composite is then removed from the vacuum environment and disposed within an anodizing bath wherein an electrical current is passed through the tantalum oxide film, the current being substantially constant until a predetermined desired voltage is reached. Thereafter, a second electrically conductive film electrode is disposed over the so-formed tantalum oxide film.

Abstract: A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having an electrically conductive film electrode formed thereon is provided and a layer of manganese dioxide is applied over the conductive film. The composite so formed is disposed within an oxygen-inert gas containing vacuum environment. A film of tantalum oxide is applied over the manganese dioxide layer by r-f sputtering of a tantalum oxide target within the vacuum environment while the dielectric substrate, conductive film, and manganese dioxide layer are being cooled. The composite may then be removed from the oxygen-inert gas containing vacuum environment and a second electrically conductive film electrode applied over the so-formed tantalum oxide film.

Abstract: A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having a non-tantalum electrically conductive film electrode formed thereon is disposed within an oxygen-nitrogen-inert gas containing vacuum environment. A film of tantalum oxide is applied over the conductive film by r-f sputtering of a tantalum oxide target within said vacuum environment while the dielectric substrate and conductive film are being cooled. The composite may then be removed from the oxygen-nitrogen-inert gas vacuum environment and a second electrically conductive film electrode applied over the so-formed tantalum oxide film.

Abstract: A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having a non-tantalum electrically conductive film electrode formed thereon is disposed within a vacuum environment. A film of tantalum oxide is applied over the conductive film within the vacuum environment. The composite is then removed from the vacuum environment and disposed within an anodizing bath wherein an electrical current is passed through the tantalum oxide film, the current being substantially constant until a predetermined desired voltage is reached. Thereafter, a second electrically conductive film electrode is disposed over the so-formed tantalum oxide film.

Abstract: A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having formed thereon a duplex electrically conductive film comprising a non-tantalum electrically conductive film electrode covered by a thin tantalum film is disposed within an oxygen-inert gas containing vacuum environment, said non-tantalum film being disposed intermediate said substrate and said tantalum film. A film of tantalum oxide is applied over the conductive film by r-f sputtering of a tantalum oxide target within the oxygen-inert gas containing vacuum environment while the dielectric substrate and conductive film are being cooled. The composite may then be removed from said oxygen-inert gas containing environment and a second electrically conductive film electrode applied over the so-formed tantalum oxide film.