Patents by Inventor Peter Loewenhardt
Peter Loewenhardt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8801892Abstract: Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.Type: GrantFiled: March 25, 2008Date of Patent: August 12, 2014Assignee: Lam Research CorporationInventors: Dean J. Larson, Babak Kadkhodayan, Di Wu, Kenji Takeshita, Bi-Ming Yen, Xingcai Su, William M. Denty, Jr., Peter Loewenhardt
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Patent number: 8573153Abstract: An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.Type: GrantFiled: November 24, 2010Date of Patent: November 5, 2013Assignee: Lam Research CorporationInventors: Andreas Fischer, William S. Kennedy, Peter Loewenhardt, David Trussell
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Patent number: 8430970Abstract: In accordance with one embodiment of the present disclosure, a method for preventing corrosion of a plasma-exposed yttria-coated constituent from ambient acidic hydrolysis wherein the plasma-exposed yttria-coated constituent includes a hydrolysable acid precursor is disclosed.Type: GrantFiled: August 9, 2010Date of Patent: April 30, 2013Assignee: Lam Research CorporationInventors: Ganapathy Swami, Peter Loewenhardt, Yunsang Kim
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Patent number: 8337713Abstract: A method for etching a layer over a substrate in a process chamber, wherein the process chamber including a first electrode and a second electrode and the first electrode is disposed opposite of the second electrode is provided. The method includes placing the substrate on the second electrode and providing an etching gas into the process chamber. The method also includes providing a first radio frequency (RF) signal into the process chamber and modulating the first RF signal. The method further includes providing a second RF signal into the process chamber and modulating the second RF signal.Type: GrantFiled: July 7, 2011Date of Patent: December 25, 2012Assignee: Lam Research CorporationInventors: Peter Loewenhardt, Mukund Srinivasan, Andreas Fischer
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Publication number: 20120031426Abstract: In accordance with one embodiment of the present disclosure, a method for preventing corrosion of a plasma-exposed yttria-coated constituent from ambient acidic hydrolysis wherein the plasma-exposed yttria-coated constituent includes a hydrolysable acid precursor is disclosed.Type: ApplicationFiled: August 9, 2010Publication date: February 9, 2012Applicant: LAM RESEARCH CORPORATIONInventors: Ganapathy Swami, Peter Loewenhardt, Yunsang Kim
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Publication number: 20110263130Abstract: A method for etching a layer over a substrate in a process chamber, wherein the process chamber including a first electrode and a second electrode and the first electrode is disposed opposite of the second electrode is provided. The method includes placing the substrate on the second electrode and providing an etching gas into the process chamber. The method also includes providing a first radio frequency (RF) signal into the process chamber and modulating the first RF signal. The method further includes providing a second RF signal into the process chamber and modulating the second RF signal.Type: ApplicationFiled: July 7, 2011Publication date: October 27, 2011Inventors: Peter Loewenhardt, Mukund Sriniyasan, Andreas Fischer
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Patent number: 7976673Abstract: An apparatus for providing a plasma etch of a layer over a wafer is provided. A capacitively coupled process chamber is provided. A gas source is provided. A first and a second electrode are provided within the process chamber. A first radio frequency power source is electrically connected to at least one of the first and second electrodes, where the first radio frequency power source provides radio frequency power. A second radio frequency power source is electrically connected to at least one of the first and second electrodes. A first modulation control is connected to the first radio frequency power source, to provide a controlled modulation of the first radio frequency power source.Type: GrantFiled: May 6, 2003Date of Patent: July 12, 2011Assignee: Lam Research CorporationInventors: Peter Loewenhardt, Mukund Srinivasan, Andreas Fischer
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Publication number: 20110067814Abstract: An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.Type: ApplicationFiled: November 24, 2010Publication date: March 24, 2011Applicant: Lam Research CorporationInventors: Andreas Fischer, William S. Kennedy, Peter Loewenhardt, David Trussell
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Patent number: 7861667Abstract: An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.Type: GrantFiled: May 23, 2003Date of Patent: January 4, 2011Assignee: Lam Research CorporationInventors: Andreas Fischer, William S. Kennedy, Peter Loewenhardt, David Trussell
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Patent number: 7601246Abstract: Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.Type: GrantFiled: September 29, 2004Date of Patent: October 13, 2009Assignee: Lam Research CorporationInventors: Jisoo Kim, Jong Shon, Biming Yen, Peter Loewenhardt
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Patent number: 7597816Abstract: A method of forming a semiconductor device is provided. A wafer with a dielectric layer disposed under a photoresist mask is placed in an etch chamber. The dielectric layer is etched. The wafer is raised. A cleaning gas is provided. A plasma is formed from the cleaning gas. A polymer that has formed on the bevel of the wafer is removed using the plasma from the cleaning gas. The wafer is removed from the etch chamber.Type: GrantFiled: September 3, 2004Date of Patent: October 6, 2009Assignee: Lam Research CorporationInventors: Jeremy Chang, Andreas Fischer, Peter Loewenhardt
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Publication number: 20090020417Abstract: Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.Type: ApplicationFiled: September 29, 2004Publication date: January 22, 2009Inventors: Jisoo Kim, Jong Shon, Bi Ming Yen, Peter Loewenhardt
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Publication number: 20080210377Abstract: Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.Type: ApplicationFiled: March 25, 2008Publication date: September 4, 2008Applicant: LAM RESEARCH CORPORATIONInventors: Dean J. Larson, Babak Kadkhodayan, Di Wu, Kenji Takeshita, Bi-Ming Yen, Xingcai Su, William M. Denty, Peter Loewenhardt
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Patent number: 7385287Abstract: A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.Type: GrantFiled: May 3, 2007Date of Patent: June 10, 2008Assignee: LAM Research CorporationInventors: Siyi Li, Helen H. Zhu, Howard Dang, Thomas S. Choi, Peter Loewenhardt
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Patent number: 7371332Abstract: Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.Type: GrantFiled: August 14, 2003Date of Patent: May 13, 2008Assignee: LAM Research CorporationInventors: Dean J. Larson, Babak Kadkhodayan, Di Wu, Kenji Takeshita, Bi-Ming Yen, Xingcai Su, William M. Denty, Jr., Peter Loewenhardt
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Publication number: 20070287292Abstract: A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.Type: ApplicationFiled: May 3, 2007Publication date: December 13, 2007Applicant: LAM RESEARCH CORPORATIONInventors: Siyi LI, Helen ZHU, Howard DANG, Thomas CHOI, Peter LOEWENHARDT
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Patent number: 7294580Abstract: A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.Type: GrantFiled: June 3, 2004Date of Patent: November 13, 2007Assignee: Lam Research CorporationInventors: Seokmin Yun, Ji Zhu, Peter Cirigliano, Sangheon Lee, Thomas S. Choi, Peter Loewenhardt, Mark H. Wilcoxson, Reza Sadjadi, Eric A. Hudson, James V. Tietz
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Patent number: 7244336Abstract: A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.Type: GrantFiled: December 17, 2003Date of Patent: July 17, 2007Assignee: Lam Research CorporationInventors: Andreas Fischer, Peter Loewenhardt
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Publication number: 20070128849Abstract: A method for forming features in dielectric layers and opening barrier layers for a plurality of wafers and cleaning an etch chamber after processing and removing each wafer of the plurality of wafers is provided. A wafer of the plurality of wafers is placed into the etch chamber wherein the wafer has a barrier layer over the wafer and a dielectric layer over the barrier layer. The dielectric layer is etched. The barrier layer is opened. The wafer is removed from the etch chamber. A waferless automatic cleaning of the etch chamber without the wafer is provided. The waferless automatic cleaning comprises providing a waferless automatic cleaning gas comprising oxygen and nitrogen to the etch chamber and forming a waferless automatic cleaning plasma from the waferless automatic cleaning gas to clean the etch chamber.Type: ApplicationFiled: February 7, 2007Publication date: June 7, 2007Applicant: LAM RESEARCH CORPORATIONInventors: Xiaoqiang YAO, Bi-Ming YEN, Taejoon HAN, Peter LOEWENHARDT
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Patent number: 7226852Abstract: A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.Type: GrantFiled: June 10, 2004Date of Patent: June 5, 2007Assignee: Lam Research CorporationInventors: Siyi Li, Helen H. Zhu, Howard Dang, Thomas S. Choi, Peter Loewenhardt