Patents by Inventor Peter M. Sandow

Peter M. Sandow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Prenucleation process for simox device fabrication
    Patent number: 5288650
    Abstract: A method of manufacturing SIMOX heterostructures is disclosed wherein a subcritical dose of oxygen ions is implanted following a first, short "nucleating" implant and a nucleation growth step. The SIMOX structure thus formed has a thin, buried oxide layer and sharp interfaces.
    Type: Grant
    Filed: October 9, 1992
    Date of Patent: February 22, 1994
    Assignee: Ibis Technology Corporation
    Inventor: Peter M. Sandow
  • Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment
    Patent number: 4479831
    Abstract: In the disclosed method, a transistor is fabricated by depositing an unpatterned layer of silicon on an insulating layer over a surface of a semiconductor substrate, with the silicon layer being deposited in an amorphous state to improve its uniformity in thickness and smoothness. Subsequently, while the silicon layer is still in the amorphous state, it is patterned by removing selected portions to form a gate. This patterning in the amorphous state improves the gates edge definition. Thereafter, the patterned amorphous silicon layer is heated to change it to polycrystalline silicon, thereby increasing its stability and conductivity.
    Type: Grant
    Filed: June 15, 1983
    Date of Patent: October 30, 1984
    Assignee: Burroughs Corporation
    Inventors: Peter M. Sandow, Barry L. Chin