Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: The invention relates to methods of controlling the effect of ions of an ionisable source gas that can react with interior surfaces of an arc chamber, by introducing ions of a displacement gas into the arc chamber, where the displacement gas ions are more chemically reactive with the material of the interior surfaces than the ions of the source gas. The source gas ions may typically be oxygen ions and the displacement gas ions are then typically fluorine ions where the interior surfaces comprise tungsten. The fluorine ions may, by way of example, be sourced from fluorine, silicon tetrafluoride or nitrogen trifluoride.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: The invention relates to an ion source for an ion implanter in which source material for providing desired ions is provided in the form of a plate or liner which can be fitted into the reactant chamber of the ion source.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: The invention relates to an ion source for an ion implanter in which source material for providing desired ions is provided in the form of a plate or liner which can be fitted into the reactant chamber of the ion source.

Abstract: The invention relates to an ion source for an ion implanter in which source material for providing desired ions is provided in the form of a plate or liner which can be fitted into the reactant chamber of the ion source.

Abstract: The invention relates to an ion source for an ion implanter in which source material for providing desired ions is provided in the form of a plate or liner which can be fitted into the reactant chamber of the ion source.

Abstract: Solder is applied to a circuit structure 7 by dipping the structure into a bath 1 of molten solder 3, the molten solder having a layer of oil 5 on top. The structure is dipped into the bath by rotating it along a path that is substantially coplanar with the circuit structure. This is achieved by supporting the structure on a carrier 9 which in turn is attached to a motor shaft 11.