Patents by Inventor Peter R. Hanley

Peter R. Hanley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5225024
    Abstract: Magnetic confinement of electrons in a plasma reactor is effected using electro-magnetic coils and other magnets which generate respective magnetic fields which are mutually opposed and substantially orthogonal on their common axis to the major plane of a wafer being processed, instead of being aligned and parallel to the major plane as in prior magnetically enhanced plasma reactors. The respective magnetic fields combine to yield a net magnetic field which is nearly parallel to the wafer away from the magnetic axis so that electrons are confined in the usual manner. In addition, a magnetic mirror provides confinement near the magnetic axis. The E.times.B cross product defines a circumferential drift velocity urging electrons about a closed path about the magnetic axis.
    Type: Grant
    Filed: August 22, 1991
    Date of Patent: July 6, 1993
    Assignee: Applied Materials, Inc.
    Inventors: Peter R. Hanley, Stephen E. Savas, Karl B. Levy, Neeta Jha, Kevin Donohoe
  • Patent number: 4851691
    Abstract: A method for pretreatment of a photoresist layer adhered to a semiconductor wafer prior to charged particle beam processing. The method includes bombarding the photoresist layer with ions which are electrically inactive with respect to the wafer. Suitable ions include ions of the noble gases. The pretreatment method causes rapid photoresist outgassing and carbonization without altering the electrical properties of the wafer. Outgassing during subsequent processing is thereby reduced. The pretreatment method is particularly applicable to ion implantation wherein dose measurement errors resulting from photoresist outgassing are reduced. The pretreatment method is performed at high current to minimize the effect on system throughput.
    Type: Grant
    Filed: November 19, 1982
    Date of Patent: July 25, 1989
    Assignee: Varian Associates, Inc.
    Inventor: Peter R. Hanley
  • Patent number: 4458746
    Abstract: For enhanced heat conductive transfer from a semiconductor wafer during ion implantation, the wafer is clamped to a platen having a contour f(r,.theta.) computed to establish uniform contact pressure over said wafer for a number, n, of discrete clamping locii distributed along the periphery of the wafer. The available area of the wafer is thus maximized.
    Type: Grant
    Filed: May 25, 1982
    Date of Patent: July 10, 1984
    Assignee: Varian Associates, Inc.
    Inventors: Scott C. Holden, Peter R. Hanley
  • Patent number: 4367411
    Abstract: A unitary electromagnet having two gaps is provided for the double deflection scanning of a charged particle beam. The unitary electromagnet is configured to permit traverse by said beam through the gaps in a plane defined by the gaps. The depth of the gaps is large as compared to the length to accommodate the scan of the beam. The mode of scanning is determined by the waveform used to energize the windings of the electromagnet and includes axial sweep scanning, off center scanning and split scanning.
    Type: Grant
    Filed: June 30, 1980
    Date of Patent: January 4, 1983
    Assignee: Varian Associates, Inc.
    Inventors: Peter R. Hanley, Norman L. Turner