Abstract: Various methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions are provided. One computer-implemented method includes using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions. The one or more defect-related functions include one or more post-mask, defect-related functions.

Abstract: A method of dissolving minerals in subterranean formations is set forth. The method includes injecting a chelating solution into a subterranean formation. The chelating solution includes a thermally stable chelating agent and sufficient caustic to elevate the pH to 10-12.5. The chelating solution is capable of simultaneously dissolving silica, silicates, and calcite present in the subterranean formation.

Abstract: Various computer-implemented methods for determining if actual defects are potentially systematic defects or potentially random defects are provided. One computer-implemented method for determining if actual defects are potentially systematic defects or potentially random defects includes comparing a number of actual defects in a group to a number of randomly generated defects in a group. The actual defects are detected on a wafer. A portion of a design on the wafer proximate a location of each of the actual defects in the group and each of the randomly generated defects in the group is substantially the same. The method also includes determining if the actual defects in the group are potentially systematic defects or potentially random defects based on results of the comparing step.

Abstract: The invention relates to compositions and co-crystals each comprising VX-950 and a co-crystal former selected from the group consisting of 4-hydroxybenzoic acid, 4-amino salicylic acid, phenylalanine, threonline, tartaric acid, adipic acid, succinic acetate, proline, methyl 4-hydroxybenzoate, anthranilic acid, and d-Biotin. Also within the scope of this invention are methods of making and using the same.

Abstract: A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.

Abstract: A hybrid drive, in particular, for a motor vehicle, includes: an internal combustion engine and a transmission disposed on the output side of the internal combustion engine, which transmission is drivable by the internal combustion engine; and an electric motor associated with the transmission having an electrically driven rotor through which the transmission is additionally drivable. The transmission includes an input shaft that is driven by the internal combustion engine and runs in the longitudinal direction of the transmission, an output shaft to drive a machine disposed on the output side of the transmission, or drive wheels in the case of a vehicle, and a plurality of manually or automatically shiftable gear stages to set the various gear ratios between the input shaft and the output shaft. The electric motor at its longitudinal axis and/or rotational axis of its rotor is attached to the output shaft in parallel or essentially parallel fashion laterally externally to the transmission.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: A hybrid drive, in particular, for a motor vehicle, includes: an internal combustion engine and a transmission disposed on the output side of the internal combustion engine, which transmission is drivable by the internal combustion engine; and an electric motor associated with the transmission having an electrically driven rotor through which the transmission is additionally drivable. The transmission includes an input shaft that is driven by the internal combustion engine and runs in the longitudinal direction of the transmission, an output shaft to drive a machine disposed on the output side of the transmission, or drive wheels in the case of a vehicle, and a plurality of manually or automatically shiftable gear stages to set the various gear ratios between the input shaft and the output shaft. The electric motor at its longitudinal axis and/or rotational axis of its rotor is attached to the output shaft in parallel or essentially parallel fashion laterally externally to the transmission.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: Various computer-implemented methods for determining if actual defects are potentially systematic defects or potentially random defects are provided. One computer-implemented method for determining if actual defects are potentially systematic defects or potentially random defects includes comparing a number of actual defects in a group to a number of randomly generated defects in a group. The actual defects are detected on a wafer. A portion of a design on the wafer proximate a location of each of the actual defects in the group and each of the randomly generated defects in the group is substantially the same. The method also includes determining if the actual defects in the group are potentially systematic defects or potentially random defects based on results of the comparing step.

Abstract: Various methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions are provided. One computer-implemented method includes using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions. The one or more defect-related functions include one or more post-mask, defect-related functions.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: Forming amorphous atorvastatin comprises the steps of dissolving atorvastatin in a solvent to form a solution, followed by adding the solution to a mixture comprising a non-solvent and a hydroxylic solvent to afford amorphous atorvastatin.

Abstract: A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.

Abstract: A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.

Abstract: A process for treating sulphide-containing water includes maintaining a steep redox potential gradient in an interface zone of the sulphide-containing water. The water is exposed to an oxygen-containing environment, and the interface zone is located immediately below the surface of the water. Sulphide in the water is biologically oxidized, in the interface zone, to sulphur. The sulphur may be removed by settling, thereby achieving a final removal of sulphur compounds.

Abstract: This invention relates to methods of making sesquisuccinate complexes of E-2-Methoxy-N-(3{4-[3-methyl-4-(6-methyl-pyridin-3-yloxy)-phenylamino]-quinazolin-6-yl}-allyl)-acetamide.

Abstract: The present invention is directed to the tartrate salts of 5,8,14-triazatetracyclo[10.3.1.02,11.04,9]-hexadeca-2(11),3,5,7,9-pentaene: and pharmaceutical compositions thereof. The present invention in particular is directed to the L-tartrate salt, and further to the various polymorphs of the L-tartrate salt, including two distinct anhydrous polymorphs (referred to herein as Forms A and B) and a hydrate polymorph (referred to herein as Form C). In addition, the present invention is also directed to the D-tartrate salt of 5,8,14-triazatetracyclo[10.3.1.02,11.04,9]-hexadeca-2(11),3,5,7,9-pentaene and the various polymorphs thereof; as well as the D,L-tartrate salt thereof and its polymorphs, and the meso-tartrate salt thereof and its polymorphs.

Abstract: An indirectly heated button cathode for use in the ion source of an ion implanter has a button member formed of a slug piece mounted in a collar piece. The slug piece is thermally insulated from the collar piece to enable it to operate at a higher temperature so that electron emission is enhanced and concentrated over the surface of the slug piece. The slug piece and collar piece can be both of tungsten. Instead the slug piece may be of tantalum to provide a lower thermionic work function. The resultant concentrated plasma in the ion source is effective to enhance the production of higher charge state ions, particularly P+++ for subsequent acceleration for high energy implantation.

Abstract: A process is disclosed for forming a fluoropolymer layer on a thin film device, comprising contacting said thin film device with a gas phase fluoromonomer, and initiating polymerization of said fluoromonomer with a free radical polymerization initiator whereby said fluoromonomer polymerizes to form said fluoropolymer layer on said thin film device.