Abstract: A system for growing a crystal is provided that includes a crucible, a furnace, and a heat transfer device. The crucible has a first volume to receive therein a material for growing a crystal. The furnace has an ampoule configured to receive the crucible within the ampoule. The furnace is configured to produce a lateral thermal profile combined with a vertical thermal gradient. The heat transfer device is disposed under the crucible and configured to produce a leading edge of growth of the crystal at a bottom of the crucible. The heat transfer device includes at least one elongate member disposed beneath the crucible and extending along a length of the crucible.

Abstract: Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps. The method also includes growing a passivation oxide layer on a top of the polished first surface and depositing patterned metal contacts on a top of the passivation oxide layer. The method further includes applying a protecting layer on the patterned deposited metal contacts, etching a second surface of the semiconductor and applying a monolithic cathode electrode on the etched second surface of the semiconductor. The method additionally includes removing the protecting layer from the patterned metal contacts on the first surface, wherein the patterned metal contacts are formed from one of (i) reactive metals and (ii) stiff-rigid metals for producing inter-band energy-levels in the passivation oxide layer.

Abstract: A system for growing a crystal is provided that includes a crucible, a furnace, and a heat transfer device. The crucible has a first volume to receive therein a material for growing a crystal. The furnace has an ampoule configured to receive the crucible within the ampoule. The furnace is configured to produce a lateral thermal profile combined with a vertical thermal gradient. The heat transfer device is disposed under the crucible and configured to produce a leading edge of growth of the crystal at a bottom of the crucible. The heat transfer device includes at least one elongate member disposed beneath the crucible and extending along a length of the crucible.

Abstract: Systems and methods for crystal growth are provided. One method includes producing a lateral thermal profile in a furnace having a crucible therein containing a material for growing a crystal. The lateral thermal profile has three zones, wherein the first and third zones have temperatures above and below a melting point of the material, respectively, and the second zone has a plurality of temperatures with at least one temperature equal to the melting point of the material. The method further includes combining the lateral thermal profile with a vertical thermal gradient produced in the furnace, wherein the vertical thermal gradient causes a point in a bottom of the crucible located in the third zone to be the coldest point in the crucible. The method also includes transferring heat from the first and second zones to the third zone to produce a leading edge of the interface.

Abstract: Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps. The method also includes growing a passivation oxide layer on a top of the polished first surface and depositing patterned metal contacts on a top of the passivation oxide layer. The method further includes applying a protecting layer on the patterned deposited metal contacts, etching a second surface of the semiconductor and applying a monolithic cathode electrode on the etched second surface of the semiconductor. The method additionally includes removing the protecting layer from the patterned metal contacts on the first surface, wherein the patterned metal contacts are formed from one of (i) reactive metals and (ii) stiff-rigid metals for producing inter-band energy-levels in the passivation oxide layer.

Abstract: Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps, wherein a last polishing step of the polishing sequence includes polishing with a slurry having a grain size smaller than about 0.1 ?m to create a polished first surface. The method also includes applying (i) an encapsulation layer on a top of the polished first surface to seal the polished first surface and (ii) a photoresist layer on top of the encapsulation layer on the polished first surface. The method further includes creating undercuts of the encapsulation layer under the photoresist layer. The method additionally includes partially etching the polished first surface of the semiconductor via the openings in the photoresist layer and in the encapsulation layer to partially etch the semiconductor creating etched regions.

Abstract: Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps. The method also includes growing a passivation oxide layer on a top of the polished first surface and depositing patterned metal contacts on a top of the passivation oxide layer. The method further includes applying a protecting layer on the patterned deposited metal contacts, etching a second surface of the semiconductor and applying a monolithic cathode electrode on the etched second surface of the semiconductor. The method additionally includes removing the protecting layer from the patterned metal contacts on the first surface, wherein the patterned metal contacts are formed from one of (i) reactive metals and (ii) stiff-rigid metals for producing inter-band energy-levels in the passivation oxide layer.

Abstract: A system includes a detector and a processing module. The detector includes pixels configured to detect an event corresponding to energy from a radiopharmaceutical. The processing module is configured to receive a request for each pixel that detects energy during a reading cycle. The processing module is configured to determine an energy level for each requesting pixel. For each requesting pixel, the processing module is configured to count the event when the energy level corresponds to an energy of the radiopharmaceutical, and to determine a combined energy level of the pixel and at least one adjacent pixel when the energy level does not correspond. The processing module is configured to count the event when the combined energy level corresponds to the energy of the radiopharmaceutical, and to disregard the event when the combined energy level does not correspond to the energy of the radiopharmaceutical.

Abstract: A system includes a detector and a processing module. The detector includes pixels configured to detect an event corresponding to energy from a radiopharmaceutical. The processing module is configured to receive a request for each pixel that detects energy during a reading cycle. The processing module is configured to determine an energy level for each requesting pixel. For each requesting pixel, the processing module is configured to count the event when the energy level corresponds to an energy of the radiopharmaceutical, and to determine a combined energy level of the pixel and at least one adjacent pixel when the energy level does not correspond. The processing module is configured to count the event when the combined energy level corresponds to the energy of the radiopharmaceutical, and to disregard the event when the combined energy level does not correspond to the energy of the radiopharmaceutical.

Abstract: Systems and methods for crystal growth are provided. One method includes producing a lateral thermal profile in a furnace having a crucible therein containing a material for growing a crystal. The lateral thermal profile has three zones, wherein the first and third zones have temperatures above and below a melting point of the material, respectively, and the second zone has a plurality of temperatures with at least one temperature equal to the melting point of the material. The method further includes combining the lateral thermal profile with a vertical thermal gradient produced in the furnace, wherein the vertical thermal gradient causes a point in a bottom of the crucible located in the third zone to be the coldest point in the crucible. The method also includes transferring heat from the first and second zones to the third zone to produce a leading edge of the interface.

Abstract: Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps, wherein a last polishing step of the polishing sequence includes polishing with a slurry having a grain size smaller than about 0.1 ?m to create a polished first surface. The method also includes applying (i) an encapsulation layer on a top of the polished first surface to seal the polished first surface and (ii) a photoresist layer on top of the encapsulation layer on the polished first surface. The method further includes creating undercuts of the encapsulation layer under the photoresist layer. The method additionally includes partially etching the polished first surface of the semiconductor via the openings in the photoresist layer and in the encapsulation layer to partially etch the semiconductor creating etched regions.

Abstract: Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps. The method also includes growing a passivation oxide layer on a top of the polished first surface and depositing patterned metal contacts on a top of the passivation oxide layer. The method further includes applying a protecting layer on the patterned deposited metal contacts, etching a second surface of the semiconductor and applying a monolithic cathode electrode on the etched second surface of the semiconductor. The method additionally includes removing the protecting layer from the patterned metal contacts on the first surface, wherein the patterned metal contacts are formed from one of (i) reactive metals and (ii) stiff-rigid metals for producing inter-band energy-levels in the passivation oxide layer.

Abstract: Method, apparatus and system for reducing or preventing polarization in semiconductor radiation detectors for medical imaging. For example, an apparatus includes a semiconductor with electrodes coupled thereto, configured to generate an electrical signal in the electrodes in response to absorption of ionizing radiation in the semiconductor, wherein the absorption of the ionizing radiation generates a space charge in the semiconductor; and an infra-red (IR) generator configured to generate IR radiation of a selectable wavelength, the selectable wavelength being chosen so as to at least partially reduce an effect of the space charge on the electrical signal.

Abstract: Method, apparatus and system for reducing or preventing polarization in semiconductor radiation detectors for medical imaging. For example, an apparatus includes a semiconductor with electrodes coupled thereto, configured to generate an electrical signal in the electrodes in response to absorption of ionizing radiation in the semiconductor, wherein the absorption of the ionizing radiation generates a space charge in the semiconductor; and an infra-red (IR) generator configured to generate IR radiation of a selectable wavelength, the selectable wavelength being chosen so as to at least partially reduce an effect of the space charge on the electrical signal.

Abstract: Method, apparatus and system for reducing or preventing polarization in semiconductor radiation detectors for medical imaging. For example, an apparatus includes a semiconductor with electrodes coupled thereto, configured to generate an electrical signal in the electrodes in response to absorption of ionizing radiation in the semiconductor, wherein the absorption of the ionizing radiation generates a space charge in the semiconductor; and an infra-red (IR) generator configured to generate IR radiation of a selectable wavelength, the selectable wavelength being chosen so as to at least partially reduce an effect of the space charge on the electrical signal.

Abstract: Method, apparatus and system for reducing or preventing polarization in semiconductor radiation detectors for medical imaging. For example, an apparatus includes a semiconductor with electrodes coupled thereto, configured to generate an electrical signal in the electrodes in response to absorption of ionizing radiation in the semiconductor, wherein the absorption of the ionizing radiation generates a space charge in the semiconductor; and an infra-red (IR) generator configured to generate IR radiation of a selectable wavelength, the selectable wavelength being chosen so as to at least partially reduce an effect of the space charge on the electrical signal.

Abstract: A method for fabricating a semiconductor device includes providing a layer of a semiconductor material on at least a portion of a surface of a substrate, and forming along the surface a capillary structure, which is in communication with the semiconductor material but is at least partially empty of the semiconductor material. The semiconductor material is heated, so as to cause the semiconductor material to melt and flow into the capillary structure. Upon allowing the semiconductor material to cool, a crystal is seeded in the capillary structure and spreads from the capillary structure through an area of the semiconductor material.