Patents by Inventor Peter Rydval

Peter Rydval has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5892300
    Abstract: A system for contactless power and data transmission contains a stationary station and a mobile station. In order to tune a resonant circuit of the mobile station to the resonant frequency of the stationary station, a multiplicity of capacitors which can be connected in parallel with the resonant circuit are provided. An instantaneous operating state of the system is included in the tuning. The realization is easy to integrate.
    Type: Grant
    Filed: April 28, 1997
    Date of Patent: April 6, 1999
    Assignee: Siemens Aktiengesellschaft
    Inventor: Peter Rydval
  • Patent number: 4400802
    Abstract: Integrated digital semiconductor circuit, including a plurality of inputs, a common constant-current source for selectively supplying the inputs, the inputs being operable in a "1" logic level state and a "0" logic level state, internal switching means for switching the inputs to a first operating state of the common constant-current source in which all of the inputs are at the "0" level and to a second operating state of the common constant-current source in which a given number of the inputs are at the "1" level and the other of the inputs are at the "0" level, a resistor being connected between the common constant-current source and each of the inputs, each of the resistors being identical to each other and being constructed in dependence on the first and second operating states of the common constant-current source.
    Type: Grant
    Filed: February 3, 1981
    Date of Patent: August 23, 1983
    Assignee: Siemens Aktiengesellschaft
    Inventor: Peter Rydval
  • Patent number: 4276485
    Abstract: A monolithic, integrated ECL circuit, e.g., a decoder circuit for bipolar semiconductor stores, wherein a current supply transistor for the current supply of two digital stages is provided under the control of a semiconductor switching element which possesses two determinate switching states. In the first switching state of the semiconductor switching element one digital stage is connected to the current supply transistor and in the second switching state the other digital stage is connected to the current supply transistor.
    Type: Grant
    Filed: November 3, 1978
    Date of Patent: June 30, 1981
    Assignee: Siemens Aktiengesellschaft
    Inventor: Peter Rydval
  • Patent number: 4253034
    Abstract: An integratable semi-conductor memory cell has two bipolar transistors which are identical to one another and which have their collectors connected in series with respective circuit parts having a non-linear current characteristic, the respective circuit parts being connected to a first electrical potential. The circuit parts are also connected to the base of the other respective transistor. One emitter of each of the transistors is provided for control by means of logic signals and the invention is particularly characterized in that the circuit part located between the collector of each one of the transistors and a switching point carrying the first electrical potential are selected in such a fashion that the slope dU/dI of the current-voltage characteristic will always be higher than the slope of the corresponding current values in the current-voltage characteristic of the pn-junctions of the emitter-base circuit of both transistors.
    Type: Grant
    Filed: August 30, 1978
    Date of Patent: February 24, 1981
    Assignee: Siemens Aktiengesellschaft
    Inventors: Peter Rydval, Ulrich Schwabe
  • Patent number: 4048517
    Abstract: A logic element, particularly a bipolar gate circuit for an LSI-circuit, employing a pair of Schottky-diodes, a pair of resistances and a transistor, with the diodes, connected in high resistance direction, to respective inputs, the other sides of the diodes being connected in common to a first resistance and to the base of the transistor, with said first resistance being operatively connected to a reference potential, said second resistance connecting the collector of the transistor, and the common connection of said diodes.
    Type: Grant
    Filed: June 28, 1976
    Date of Patent: September 13, 1977
    Assignee: Siemens Aktiengesellschaft
    Inventors: Ronald Rathbone, Peter Rydval