Patents by Inventor Peter W. Deelman

Peter W. Deelman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Quantum dots (QD) for semiconductor integrated circuit
    Patent number: 9117763
    Abstract: Semiconductor device identification using quantum dot technology. A semiconductor nanocrystal based target is fabricated. A guard ring superjacent the fluorescing surface of the nanocrystal surface is provided to ensure repeatability of spectral mapping and analysis data. A transparent cap on the target may enhance performance. A system for coding a semiconductor device is described. A method is described for fabricating quantum dot targets in a methodology compatible with subsequent semiconductor fabrication process steps.
    Type: Grant
    Filed: September 16, 2013
    Date of Patent: August 25, 2015
    Assignee: HRL Laboratories, LLC
    Inventors: Mary Y. Chen, Peter W. Deelman, Marko Sokolich
  • Semiconductor device coding using quantum dot technology
    Patent number: 8595654
    Abstract: Semiconductor device identification using quantum dot technology. A semiconductor nanocrystal based target is fabricated. A guard ring superjacent the fluorescing surface of the nanocrystal surface is provided to ensure repeatability of spectral mapping and analysis data. A transparent cap on the target may enhance performance. A system for coding a semiconductor device is described. A method is described for fabricating quantum dot targets in a methodology compatible with subsequent semiconductor fabrication process steps.
    Type: Grant
    Filed: October 3, 2006
    Date of Patent: November 26, 2013
    Assignee: HRL Laboratories, LLC
    Inventors: Mary Y. Chen, Peter W. Deelman, Marko Sokolich
  • Fabricating a device with a diamond layer
    Patent number: 7892881
    Abstract: In one aspect, a method includes forming a silicon dioxide layer on a surface of a diamond layer disposed on a gallium nitride (GaN)-type layer. The method also includes etching the silicon dioxide layer to form a pattern. The method further includes etching portions of the diamond exposed by the pattern.
    Type: Grant
    Filed: February 23, 2009
    Date of Patent: February 22, 2011
    Assignee: Raytheon Company
    Inventors: Mary Y. Chen, Peter W. Deelman
  • FABRICATING A DEVICE WITH A DIAMOND LAYER
    Publication number: 20100216301
    Abstract: In one aspect, a method includes forming a silicon dioxide layer on a surface of a diamond layer disposed on a gallium nitride (GaN)-type layer. The method also includes etching the silicon dioxide layer to form a pattern. The method further includes etching portions of the diamond exposed by the pattern.
    Type: Application
    Filed: February 23, 2009
    Publication date: August 26, 2010
    Inventors: MARY Y. CHEN, Peter W. Deelman
  • GaN DHFET
    Patent number: 7098490
    Abstract: The present invention provides a GaN based DHFET that helps confine the 2DEG to the channel layer, and reduces the 2DHG. The present invention provides a GaN DHFET having a channel layer comprising GaN and a buffer layer comprising AlxGa1?xN. The Al content in the buffer layer is specifically chosen based on the thickness of the channel layer using a graph. By choosing the Al content in the buffer layer and thickness of the channel layer in accordance with the graph provided in the present invention, the ability of the buffer layer to help confine the 2DEG to the channel layer is improved.
    Type: Grant
    Filed: April 26, 2004
    Date of Patent: August 29, 2006
    Assignee: HRL Laboratories, LLC
    Inventors: Miroslav Micovic, Tahir Hussain, Paul Hashimoto, Peter W. Deelman
  • GaN DHFET
    Publication number: 20040238842
    Abstract: The present invention provides a GaN based DHFET that helps confine the 2DEG to the channel layer, and reduces the 2DHG. The present invention provides a GaN DHFET having a channel layer comprising GaN and a buffer layer comprising AlxGa1-xN. The Al content in the buffer layer is specifically chosen based on the thickness of the channel layer using a graph. By choosing the Al content in the buffer layer and thickness of the channel layer in accordance with the graph provided in the present invention, the ability of the buffer layer to help confine the 2DEG to the channel layer is improved.
    Type: Application
    Filed: April 26, 2004
    Publication date: December 2, 2004
    Applicant: HRL Laboratories, LLC
    Inventors: Miroslav Micovic, Tahir Hussain, Paul Hashimoto, Peter W. Deelman