Abstract: We disclose a high voltage semiconductor device comprising a semiconductor substrate of a second conductivity type; a semiconductor drift region of the second conductivity type disposed over the semiconductor substrate, the semiconductor substrate region having higher doping concentration than the drift region; a semiconductor region of a first conductivity type, opposite to the second conductivity type, formed on the surface of the device and within the semiconductor drift region, the semiconductor region having higher doping concentration than the drift region; and a lateral extension of the first conductivity type extending laterally from the semiconductor region into the drift region, the lateral extension being spaced from a surface of the device.

Abstract: The invention relates to a method for providing at least one information from an environmental region (8) of a motor vehicle (2) to a driver of the motor vehicle (2), wherein at least one first image (B3) captured by a vehicle-side camera system (6) and at least one second image (B4) captured by a vehicle-external camera system (7) situated within the field of view (19a, 19b) of the vehicle-side camera system (6) are received in the method, wherein an image-in-image representation (B5) is generated from the at least one first image (B3) and the at least one second image (B4) for displaying on a vehicle-side display device (13) as the at least one information, wherein a first image region (21) for displaying the at least one first image (B3) and a second image region (22) separate from the first image region (21) for displaying the at least one second image (B4) are determined for the image-in-image representation (B5).

Abstract: Silicon photomultiplier circuitry is provided that comprises at least one silicon photomultiplier pixel, each pixel comprising a plurality of silicon photomultiplier microcells. The silicon photomultiplier circuitry comprises control circuitry adapted to maintain a substantially constant voltage on a connection node between microcells of the pixel. The control circuitry is adapted to minimise the onset and recovery time of an output signal by maintaining a substantially constant voltage on the connection node.

Abstract: The present invention pertains generally to the field of therapeutic compounds. More specifically the present invention pertains to certain 3,3-disubstituted-(8-aza-bicyclo[3.2.1]oct-8-yl)-[5-(1H-pyrazol-4-yl)-thiophen-3-yl]-methanone, 3,3-disubstituted-(6-aza-bicyclo[3.1.1]hept-6-yl)-[5-(1H-pyrazol-4-yl)-thiophen-3-yl]-methanone, and 4,4-disubstituted piperidin-1-yl)-[5-(1H-pyrazol-4-yl)-thiophen-3-yl]-methanone compounds of the following formula that, inter alia, inhibit 11?-hydroxysteroid dehydrogenase type 1 (11?-HSD1).

Abstract: We describe a method for reducing bow in a composite wafer comprising a silicon wafer and a silicon carbide layer grown on the silicon wafer. The method includes applying nitrogen atoms during the growth process of the silicon carbide layer on the silicon wafer so as to generate a compressive stress within the composite wafer.

Abstract: Silicon photomultiplier circuitry is provided that comprises at least one silicon photomultiplier pixel, each pixel comprising a plurality of silicon photomultiplier microcells. The silicon photomultiplier circuitry comprises control circuitry adapted to maintain a substantially constant voltage on a connection node between microcells of the pixel. The control circuitry is adapted to minimize the onset and recovery time of an output signal by maintaining a substantially constant voltage on the connection node.

Abstract: The invention relates to a method for operating a driver assistance system (2) of a motor vehicle (1), in which a rear image of an environmental region (11, 12, 14) of the motor vehicle (1) located substantially next to and/or behind the motor vehicle (1) is captured by at least one camera (3, 4) of the driver assistance system (2), the camera being provided on the vehicle, wherein at least one road marking (19) of a roadway (17) is recognized in the environmental region (11, 12, 14) based on the captured rear image.

Abstract: An accessory drive tuning device with a torsion spring for angular vibration isolation and having a spring pocket that frictionally engages the end of the torsion spring. The engagement may be with a wedge-shape on either the spring end or the pocket or both, adapted so that the spring end wedges into the pocket. The engagement may be by interference fit. One or both ends of the spring may be engaged in respective pockets.

Abstract: We disclose a high voltage semiconductor device comprising a semiconductor substrate of a second conductivity type; a semiconductor drift region of the second conductivity type disposed over the semiconductor substrate, the semiconductor substrate region having higher doping concentration than the drift region; a semiconductor region of a first conductivity type, opposite to the second conductivity type, formed on the surface of the device and within the semiconductor drift region, the semiconductor region having higher doping concentration than the drift region; and a lateral extension of the first conductivity type extending laterally from the semiconductor region into the drift region, the lateral extension being spaced from a surface of the device.

Abstract: The present invention is a vertically oriented device that is intended to be installed in gambling casinos or other areas where there is limited space. The device serves several functions. It is a holder for a portable telephone while the phone is being charged and when in use. The device is provided with electrical power via various types of charger cords and ports to charge a variety of phones or other electrical devices. It is a drinking cup holder that is lighted so that a drinking cup in the holder is clearly visible. It also has a directional task light located under the drinking cup holder that provides light in an area under the cup holder and adjacent the device's supporting base to accommodate a cigarette ash tray or other item that needs to be lighted so as to be seen by the user.

Abstract: A tensioner comprising a shaft, a base, a pivot arm pivotally engaged with the base, a pulley journalled to the pivot arm, a first spring urging a first damping member into a frictional engagement with the pivot arm, the first spring engaged with the base, the first damping member imparting a damping force greater in a first pivot arm direction than in a second pivot arm direction, and a second spring disposed in the pivot arm and urging a second damping member into a frictional engagement with a base surface, the base surface comprises an arcuate form having a radius that is variable from a minimum value to a maximum value.

Abstract: A tensioner comprising a base, a shaft connected to the base, an eccentric adjuster coaxially engaged with the shaft, an arm pivotally engaged with the shaft, a pulley journalled to the arm, a torsion spring engaged between the arm and the base, the arm comprising a first receiving portion and a second receiving portion disposed axially opposite from the first receiving portion, a first damping member disposed between the arm and the base, the first damping member frictionally engaged with the base and engaged with first receiving portion, a second damping member disposed between the arm and the eccentric adjuster having a member engaged with the second receiving portion, and a biasing member disposed between the first damping member and the arm for applying a normal force to the first damping member and to the second damping member.

Abstract: A tensioner comprising a shaft, a base, a pivot arm pivotally engaged with the base, a pulley journalled to the pivot arm, a first spring urging a first damping member into a frictional engagement with the pivot arm, the first spring engaged with the base, the first damping member imparting a damping force greater in a first pivot arm direction than in a second pivot arm direction, and a second spring disposed in the pivot arm and urging a second damping member into a frictional engagement with a base surface, the base surface comprises an arcuate form having a radius that is variable from a minimum value to a maximum value.

Abstract: We disclose herein a method of manufacturing a silicon carbide (SiC) based insulated gate bipolar transistor (IGBT), the IGBT comprising: a monocrystalline silicon substrate; a collector region of a first conductivity type disposed over the silicon substrate, wherein the collector region comprises a material comprising 3-step cubic silicon carbide (3C-SiC); a semiconductor drift region of a second conductivity type, opposite the first conductivity type, disposed on the collector region; a body region of the first conductivity type located within the semiconductor drift region; an emitter region of the second conductivity type located within the body region; a gate region placed above and in contact to the emitter region.

Abstract: A method comprises providing a monocrystalline silicon wafer (11) having a principal surface (17) which supports a masking layer (24), for example silicon dioxide or polycrystalline silicon, having windows (25) to expose corresponding regions of the silicon wafer, forming silicon carbide seed regions (30) on the exposed regions of the wafer, for example by forming carbon and converting the carbon into silicon carbide, and growing monocrystalline silicon carbide (31) on the silicon carbide seed regions. Thus, monocrystalline silicon carbide can be formed selectively on the silicon wafer which can help to avoid wafer bow.

Abstract: The present application provides compositions and methods for treating acute lung injury and acute respiratory distress syndrome. The methods include administering one or more tight junction antagonists to the lung of a subject in need thereof.

Abstract: We disclose a semiconductor structure comprising a monocrystalline silicon wafer; spaced apart monocrystalline silicon carbide layers disposed directly on the silicon wafer; amorphous and/or polycrystalline silicon carbide layers disposed directly on the silicon wafer between the monocrystalline silicon carbide layers; first gallium nitride layers disposed on the monocrystalline silicon carbide layers; and second gallium nitride layers disposed on the amorphous and/or polycrystalline silicon carbide layers.

Abstract: The present invention pertains generally to the field of therapeutic compounds. More specifically the present invention pertains to certain 3,3-disubstituted-(8-aza-bicyclo[3.2.1]oct-8-yl)-[5-(1H-pyrazol-4-yl)-thiophen-3-yl]-methanone, 3,3-disubstituted-(6-aza-bicyclo[3.1.1]hept-6-yl)-[5-(1H-pyrazol-4-yl)-thiophen-3-yl]-methanone, and 4,4-disubstituted piperidin-1-yl)-[5-(1H-pyrazol-4-yl)-thiophen-3-yl]-methanone compounds of the following formula that, inter alia, inhibit 11?-hydroxysteroid dehydrogenase type 1 (11?-HSD1).

Abstract: We disclose a semiconductor structure comprising a monocrystalline silicon wafer; spaced apart monocrystalline silicon carbide layers disposed directly on the silicon wafer; amorphous and/or polycrystalline silicon carbide layers disposed directly on the silicon wafer between the monocrystalline silicon carbide layers; first gallium nitride layers disposed on the monocrystalline silicon carbide layers; and second gallium nitride layers disposed on the amorphous and/or polycrystalline silicon carbide layers.