Abstract: A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.

Abstract: A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.

Abstract: A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.

Abstract: A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.

Abstract: An electronic device comprising a field-effect transistor having an inter digitated structure suitable for high-frequency power applications, and having multiple threshold voltages that are provided in different regions of each a segment of the interdigitated structure. This leads to a dramatic improvement in linearity over a large power range in the back-off region under class AB signal operation.

Abstract: The invention relates to in particular a lateral DMOST with a drain extension (8). In the known transistor a further metal strip (20) is positioned between the gate electrode contact strip and the drain contact (16) which is electrically connected with the source region contact (15). In the device proposed here, the connection between the further metal strip (20) and the source contact (15,12) comprises a capacitor (30) and the further metal strip (20) is provided with a further contact region (35) for delivering a voltage to the further metal strip (20). In this way an improved linearity is possible and the usefulness of the device is improved in particular at high power and at high frequencies. Preferably the capacitor (30) is integrated with the transistor in a single semiconductor body (1). The invention further comprises a method of operating a device (10) according to the invention.

Abstract: The LDMOS transistor (99) of the invention is provided with a stepped shield structure (50) and/or with a first (25) and a second (26) drain extension region having a higher dopant concentration than the second drain extension region, and being covered by the shield.