Abstract: A gate array arrangement provides basic cells in a core region, with logic functions or storage functions being realized by wiring these basic cells. The basic cells are composed of six or seven transistors in CMOS technology, with three p-channel transistors (TR1) in a a first region (BE1) and three n-channel transistors (TR2) in a second region (BE2), with the terminals (GTA) of the gate electrodes (GT1, GT2) of the transistors being arranged between these two regions (BE1, BE2). A further transistor (TR3) that has a smaller channel width than the remaining transistors (TR1, TR2) is arranged outside of the region (BE2) for the n-channel transistors (TR2). The gate electrode (GT3) of the further transistor lies parallel to the electrodes (GT2) connected to the gates of the n-channel transistors (TR2) but is shorter. The terminal (GTB) of the gate electrode (GT3) of the further transistor (TR3) faces toward the line for the supply voltage (VSS).

Abstract: A gate array arrangement provides cell zones in the form of a matrix in a core zone of a chip. Each cell zone contains a fundamental circuit which consists of six or seven transistors designed in CMOS technology and which can perform a logic function or a storage function on the basis of appropriate interconnections. The connection of the fundamental circuits to one another is carried out either by way of the fundamental circuits or by using fundamental circuits which are not used to construct memories or logic functions. On the basis of the fundamental circuits consisting of six or seven n-channel and p-channel transistors it is possible to construct one storage cell per fundamental circuit and therefore to provide memories which can be adapted to the prevailing requirements in a gate array arrangement.