Patents by Inventor Pham Nam Hai

Pham Nam Hai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • BiSb topological insulator with novel buffer layer that promotes a BiSb (012) orientation
    Patent number: 11694713
    Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: July 4, 2023
    Assignee: Western Digital Technologies, Inc.
    Inventors: Quang Le, Cherngye Hwang, Brian R. York, Thao A. Nguyen, Zheng Gao, Kuok San Ho, Pham Nam Hai
  • BiSb Topological Insulator with Novel Buffer Layer that Promotes a BiSb (012) Orientation
    Publication number: 20210249038
    Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.
    Type: Application
    Filed: November 20, 2020
    Publication date: August 12, 2021
    Inventors: Quang LE, Cherngye HWANG, Brian R. YORK, Thao A. NGUYEN, Zheng GAO, Kuok San HO, Pham Nam Hai
  • MAGNETIC-ELECTRIC ENERGY CONVERSION DEVICE, POWER SUPPLY DEVICE, AND MAGNETIC SENSOR
    Publication number: 20120092003
    Abstract: A magnetic-electric energy conversion device includes: a matrix (12) that includes ferromagnetic particles (10) with conductive properties; an injector (20) that injects carriers into the ferromagnetic particles; and a receptor (22) that accepts the carriers from the ferromagnetic particles. In the magnetic-electric energy conversion device, the carriers tunnel from the injector to the receptor via the ferromagnetic particles, when the magnetization state of the ferromagnetic particles is reversed by magnetic tunneling due to a magnetic field.
    Type: Application
    Filed: March 6, 2010
    Publication date: April 19, 2012
    Applicants: TOHOKU UNIVERSITY, THE UNIVERSITY OF TOKYO
    Inventors: Masaaki Tanaka, Pham Nam Hai, Shinobu Ohya, Stewart E. Barnes, Sadamichi Maekawa