Patents by Inventor Philip Gene Nikkel

Philip Gene Nikkel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130288461
    Abstract: A method of fabricating Group III-V semiconductor metal oxide semiconductor (MOS) and III-V MOS devices are described.
    Type: Application
    Filed: June 28, 2013
    Publication date: October 31, 2013
    Inventors: Thomas Edward DUNGAN, Philip Gene NIKKEL
  • Patent number: 8502272
    Abstract: A method of fabricating Group III-V semiconductor metal oxide semiconductor (MOS) and III-V MOS devices are described.
    Type: Grant
    Filed: May 16, 2007
    Date of Patent: August 6, 2013
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Thomas Edward Dungan, Philip Gene Nikkel
  • Patent number: 7554166
    Abstract: A component having an airdome enclosure that protects the component from its external environment. An airdome enclosure according to the present techniques avoids the high costs of employing special materials and/or specialized process steps in the manufacture of a component. An electronic component according to the present techniques includes a set of substructures formed on a substrate and an airdome enclosure over the substructures that protects the substructures and that hinders the formation of parasitic capacitances among the substructures.
    Type: Grant
    Filed: January 23, 2006
    Date of Patent: June 30, 2009
    Assignee: Avago Technologies ECBU IP (Singapore) Pte. Ltd.
    Inventors: John Shi Sun Wei, Ray Myron Parkhurst, Michael James Jennison, Philip Gene Nikkel
  • Publication number: 20080286915
    Abstract: A method of fabricating Group III-V semiconductor metal oxide semiconductor (MOS) and III-V MOS devices are described.
    Type: Application
    Filed: May 16, 2007
    Publication date: November 20, 2008
    Inventors: Thomas Edward Dungan, Philip Gene Nikkel
  • Publication number: 20080054300
    Abstract: A field effect transistor is formed on a substrate and includes a semiconductor channel region formed over the substrate and a metallic source region formed on the channel region. A metallic drain region is formed on the channel region and a metallic gate region formed on the channel region between the source and drain regions. A first metallic body contact region is formed adjacent the drain region and extending through the channel region to contact the substrate. The field effect transistor may further include a second metallic body contact region formed adjacent the source region and extending through the channel region to contact the substrate.
    Type: Application
    Filed: June 30, 2006
    Publication date: March 6, 2008
    Inventors: Philip Gene Nikkel, John S. Wei
  • Patent number: 7033906
    Abstract: A component having an airdome enclosure that protects the component from its external environment. An airdome enclosure according to the present techniques avoids the high costs of employing special materials and/or specialized process steps in the manufacture of a component. An electronic component according to the present techniques includes a set of substructures formed on a substrate and an airdome enclosure over the substructures that protects the substructures and that hinders the formation of parasitic capacitances among the substructures.
    Type: Grant
    Filed: February 2, 2004
    Date of Patent: April 25, 2006
    Inventors: John Shi Sun Wei, Ray Myron Parkhurst, Michael James Jennison, Philip Gene Nikkel