Abstract: A method of manufacturing a semiconductor device includes defining a sampling plan in a process control system. Measurement values are obtained at the first number N of the sample points. The first number of measurement values are modelled using a wafer model to generate a first set of coefficients according to a reference model. A second number M of the first number N of sample points is randomly selected. The second number M of measurement values obtained at the second number M of sample points is modelled using the wafer model to generate a second set of coefficients according to a phase_1 model. One of the M sample points is randomly replaced by one of the N?M sample points to obtain a subsample. The measurement values of the subsample are modelled using the wafer model to generate a third set of coefficients according to a phase_2 model.

Abstract: A method of manufacturing a semiconductor device includes defining a sampling plan in a process control system. Measurement values are obtained at the first number N of the sample points. The first number of measurement values are modelled using a wafer model to generate a first set of coefficients according to a reference model. A second number M of the first number N of sample points is randomly selected. The second number M of measurement values obtained at the second number M of sample points is modelled using the wafer model to generate a second set of coefficients according to a phase_1 model. One of the M sample points is randomly replaced by one of the N?M sample points to obtain a subsample. The measurement values of the subsample are modelled using the wafer model to generate a third set of coefficients according to a phase_2 model.

Abstract: A Lithographic apparatus and method of controlling a lithographic process. A substrate is provided and a photosensitive layer is provided on a main surface of the substrate. The substrate includes a base section and a mesa section. In the base section the main surface is in a base plane. The mesa section protrudes from the base plane. A radiation beam scans the photosensitive layer. A local dose applied to a partial area of the photosensitive layer by the radiation beam includes a base dose component and a correction dose component. The correction dose component is a function of a distance between the partial area and a transition between the base section and the mesa section and at least partly compensates an effect of a defocus, which results from a height difference between the mesa section and the base section, on a critical dimension in the partial area.

Abstract: Critical dimension values can be obtained from wafer structures at predefined measurement sites. Coefficients of a preset model and another model with a different term are determined using critical dimension values from the measurement sites. The models approximate the critical dimension values, the process parameters and/or correction values of the process parameters as a function of at least two position coordinates. An updated model is selected from the models based on a criterion weighting the residuals between approximated critical dimension values, the number of terms of the model and/or the order or the terms of the model.

Abstract: Critical dimension values can be obtained from wafer structures at predefined measurement sites. Coefficients of a preset model and another model with a different term are determined using critical dimension values from the measurement sites. The models approximate the critical dimension values, the process parameters and/or correction values of the process parameters as a function of at least two position coordinates. An updated model is selected from the models based on a criterion weighting the residuals between approximated critical dimension values, the number of terms of the model and/or the order or the terms of the model.

Abstract: A Lithographic apparatus and method of controlling a lithographic process. A substrate is provided and a photosensitive layer is provided on a main surface of the substrate. The substrate includes a base section and a mesa section. In the base section the main surface is in a base plane. The mesa section protrudes from the base plane. A radiation beam scans the photosensitive layer. A local dose applied to a partial area of the photosensitive layer by the radiation beam includes a base dose component and a correction dose component. The correction dose component is a function of a distance between the partial area and a transition between the base section and the mesa section and at least partly compensates an effect of a defocus, which results from a height difference between the mesa section and the base section, on a critical dimension in the partial area.