Patents by Inventor Philip H. Yeh

Philip H. Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Writing method and system for a phase change memory
    Patent number: 7773409
    Abstract: A writing method for a phase change memory is disclosed. The writing method inputs a first writing pulse signal to a phase change memory to heat the phase change memory to above a first temperature and inputting a second writing pulse signal to the phase change memory to keep the phase change memory at a second temperature.
    Type: Grant
    Filed: December 12, 2007
    Date of Patent: August 10, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Ming-Jung Chen, Te-Sheng Chao, Philip H. Yeh
  • Programming method for phase change memory
    Patent number: 7660147
    Abstract: A programming method for a phase change memory based on the phase transformations between amorphous and crystalline phases is disclosed. The programming method comprises a current pulse with step waveform providing a first crystallization current pulse to the phase change memory and providing a second crystallization current pulse to the phase change memory. The first crystallization current pulse has a first rising edge, a first falling edge and a first peak current held for a first hold time. The second crystallization current pulse has a second peak current. The second peak current follows the first falling edge and is held for a second hold time.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: February 9, 2010
    Assignees: Industrial Technology Research Institute, Powerchip Semiconductor Corp., Nany Technology Corporation., Promos Technologies Inc., Winbond Electronics Corp.
    Inventors: Te-Sheng Chao, Ming-Jung Chen, Philip H. Yeh, Ming-Jinn Tsai
  • Writing method and system for a phase change memory
    Publication number: 20080219046
    Abstract: A writing method for a phase change memory is disclosed. The writing method inputs a first writing pulse signal to a phase change memory to heat the phase change memory to above a first temperature and inputting a second writing pulse signal to the phase change memory to keep the phase change memory at a second temperature.
    Type: Application
    Filed: December 12, 2007
    Publication date: September 11, 2008
    Inventors: Ming-Jung Chen, Te-Sheng Chao, Philip H. Yeh
  • PROGRAMMING METHOD FOR PHASE CHANGE MEMORY
    Publication number: 20080151613
    Abstract: A programming method for a phase change memory based on the phase transformations between amorphous and crystalline phases is disclosed. The programming method comprises a current pulse with step waveform providing a first crystallization current pulse to the phase change memory and providing a second crystallization current pulse to the phase change memory. The first crystallization current pulse has a first rising edge, a first falling edge and a first peak current held for a first hold time. The second crystallization current pulse has a second peak current. The second peak current follows the first falling edge and is held for a second hold time.
    Type: Application
    Filed: December 18, 2007
    Publication date: June 26, 2008
    Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, POWERCHIP SEMICONDUCTOR CORP., NANYA TECHNOLOGY CORPORATION, PROMOS TECHNOLOGIES INC., WINBOND ELECTRONICS CORP.
    Inventors: Te-Sheng Chao, Ming-Jung Chen, Philip H. Yeh, Ming-Jinn Tsai