Abstract: The invention provides a chip for separating light into different wavelengths. The chip includes a substrate, an input waveguide, an optical arrangement, and a plurality of output waveguides. The substrate has first and second edge sections. The input waveguide is formed on the substrate and has an end for providing light thereto located at the first edge section. The input waveguide extends from the first end thereof in a first direction. The optical arrangement receives the light from the input waveguide and separates the light into a pattern of light of different wavelengths. The output waveguides are formed on the substrate. Each output waveguide receives light of a respective wavelength from the optical arrangement and transmits the light. Each output waveguide has an end, from which the light is transmitted, located at the second edge section. Each output waveguide extends to the second end thereof in a second direction. The second direction is different from the first direction.

Abstract: A system is provided for mounting a fiber between locks by placing the locks at or near the natural inflection points of a sinusoidally curved fiber. This is accomplished by angularly offsetting the fiber exiting the locks at equal angles from an imaginary center line drawn between the locks, and by providing enough slack in the fiber between the locks to cause the inflection points to be positioned at or near the locks.

Abstract: An apparatus for stabilizing the wavelength of light emitted by a laser or light source comprising a divider for dividing a sample of emitted light into a first and second portion; a first photodetector configured to measure an intensity of the first portion and a second photodetector configured to measure an intensity of the second portion, the second photodetector configured to receive the emitted light via an optical frequency discriminator, such as a dielectric coating, wherein the optical frequency discriminator is configured to modify the intensity of the emitted light at the second photodetector as a function of an optical frequency of the emitted light; and a processor configured to maintain a desired level corresponding to a ratio of the intensity measured by the first photodetector and the intensity measured by the second photodetector, so as to provide a feedback control signal to adjust the wavelength of the emitted light.

Abstract: A light emitting device uses a vertical cavity surface emitting laser having a voltage controlled mirror which is used, for example, to turn the laser ON and OFF by varying the reflectivity of one mirror forming the laser cavity.

Abstract: A semiconductor distributed feedback laser having a grating with .lambda./4 phase shift which is produced by moving the left and right sections of the grating with respect to each other in a direction perpendicular to the longitudinal axis of the active region.

Abstract: Disclosed is an optical device producing single mode laser emission. The device includes a semiconductor laser which would normally emit a number of closely spaced longitudinal modes and a filter which receives light from the laser active layer and reflects light back to the active layer. The filter includes at least one thin, optically absorbing layer, a dielectric layer, and a reflecting layer. The thickness and refractive indices of the layers are such that the filter reflectivity has a number of narrow maxima, but only one which lies within the gain bandwidth of the laser. The width of the peak and the background amplitude between peaks is such that only a single longitudinal mode of the laser is allowed to oscillate.

Abstract: The property of Group III-V compound materials, whereby ion bombarded material becomes highly resistive but recovers its original low resistivity by annealing at a temperature which is dopant and material dependant, is utilized to fabricate integrated circuits which include buried semiconductor interconnections or bus bars between devices.

Abstract: Disclosed are double heterostructure junction lasers and incoherent LEDs in which the active region comprising Al.sub.z Ga.sub.1-z As.sub.1-y Sb.sub.y 0.001.ltoreq.y.ltoreq.0.02 and in which the cladding layers comprise Al.sub.x Ga.sub.1-x As, (x-z).gtoreq.0.20. Long lifetime lasers operating at wavelengths in the vicinity of 0.87-0.92 .mu.m are realized. Visible wavelength lasers and LEDs are also discussed.