Abstract: The invention relates to a method for plating a recess in a substrate, a device for plating a recess in a substrate and a system for plating a recess in a substrate comprising the device. The method for plating a recess in a substrate comprises the following steps: Providing a substrate with a substrate surface comprising at least one recess, applying a replacement gas to the recess to replace an amount of ambient gas in the recess to at least partially clear the recess from the ambient gas, applying a processing fluid to the recess, wherein the replacement gas dissolves in the processing fluid to at least partially clear the recess from the replacement gas, and plating the recess.

Abstract: The invention relates to a distribution body for a process fluid for chemical and/or electrolytic surface treatment of a substrate, a distribution system for chemical and/or electrolytic surface treatment of a substrate in a process fluid, a use of a distribution body or a distribution system for a chemical and/or electrolytic surface treatment of a substrate in a process fluid and a distribution method for a process fluid for chemical and/or electrolytic surface treatment of a substrate. The distribution body comprises: a front face, a rear face, at least an inlet, an outlet array, and a flow control array. The front face is configured to be directed towards the substrate for the surface treatment of the substrate. The rear face is arranged opposite to the front face. The inlet is configured for an entry of the process fluid into the distribution body. The outlet array comprises several outlets, which are configured for an exit of the process fluid out of the distribution body and towards the substrate.

Abstract: The teaching relates to a method for plating a recess in a substrate, a device for plating a recess in a substrate and a system for plating a recess in a substrate comprising the device. The method for plating a recess in a substrate includes the following: a) Providing a substrate with a substrate surface comprising at least one recess, b) applying a replacement gas to the recess to replace an amount of ambient gas in the recess to at least partially clear the recess from the ambient gas, c) applying a processing fluid to the recess, wherein the replacement gas dissolves in the processing fluid to at least partially clear the recess from the replacement gas, and d) plating the recess.

Abstract: The invention relates to a method for plating a recess in a substrate, a device for plating a recess in a substrate and a system for plating a recess in a substrate comprising the device. The method for plating a recess in a substrate comprises the following steps: a) Providing a substrate with a substrate surface comprising at least one recess, b) applying a replacement gas to the recess to replace an amount of ambient gas in the recess to at least partially clear the recess from the ambient gas, c) applying a processing fluid to the recess, wherein the replacement gas dissolves in the processing fluid to at least partially clear the recess from the replacement gas, and d) plating the recess.

Abstract: The invention relates to a method for plating a recess in a substrate, a device for plating a recess in a substrate and a system for plating a recess in a substrate comprising the device. The method for plating a recess in a substrate comprises the following steps: a) Providing a substrate with a substrate surface comprising at least one recess, b) applying a replacement gas to the recess to replace an amount of ambient gas in the recess to at least partially clear the recess from the ambient gas, c) applying a processing fluid to the recess, wherein the replacement gas dissolves in the processing fluid to at least partially clear the recess from the replacement gas, and d) plating the recess.

Abstract: An apparatus for processing wafer-shaped articles comprises a vacuum transfer module and an atmospheric transfer module. A first airlock interconnects the vacuum transfer module and the atmospheric transfer module. An atmospheric process module is connected to the atmospheric transfer module. A gas supply system is configured to supply gas separately and at different controlled flows to each of the atmospheric transfer module, the first airlock and the atmospheric process module, so as to cause: (i) a flow of gas from the first airlock to the atmospheric transfer module when the first airlock and the atmospheric transfer module are open to one another, and (ii) a flow of gas from the atmospheric transfer module to the atmospheric process module when the atmospheric transfer module and the atmospheric process module are open to one another.

Abstract: A device for measuring the distribution and/or impulse of a series of droplets comprises a piezoelectric sensor positioned relative to a source of droplets such that each of a plurality of droplets contacts the piezoelectric sensor in succession, thereby to generate an electrical signal. Logic circuitry is configured to calculate one or more frequencies from the electrical signal.

Abstract: An apparatus and method for processing wafer-shaped articles utilizes at least first and second liquid-dispensing nozzles, wherein a first liquid-dispensing nozzle is positioned closer to an axis of rotation than the second liquid-dispensing nozzle. A liquid supply system supplies heated process liquid to the nozzles such that process liquid dispensed from the first nozzle has a temperature that differs by an amount within a predetermined range from a temperature of process liquid dispensed from the second liquid-dispensing nozzle.

Abstract: An apparatus for processing wafer-shaped articles comprises a vacuum transfer module and an atmospheric transfer module. A first airlock interconnects the vacuum transfer module and the atmospheric transfer module. An atmospheric process module is connected to the atmospheric transfer module. A gas supply system is configured to supply gas separately and at different controlled flows to each of the atmospheric transfer module, the first airlock and the atmospheric process module, so as to cause: (i) a flow of gas from the first airlock to the atmospheric transfer module when the first airlock and the atmospheric transfer module are open to one another, and (ii) a flow of gas from the atmospheric transfer module to the atmospheric process module when the atmospheric transfer module and the atmospheric process module are open to one another.

Abstract: An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared heating elements are mounted in a stationary manner with respect to rotation of said spin chuck. The infrared heating elements are arranged in a nested configuration so as to define individually controllable inner, middle and outer heating zones adjacent a disc-shaped article when positioned on the spin chuck.

Abstract: An apparatus for processing wafer-shaped articles comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the closed process chamber, and is adapted to hold a wafer shaped article thereon. A lid is secured to an upper part of the closed process chamber. The lid comprises an annular chamber, gas inlets communicating with the annular chamber and opening on a surface of the lid facing outwardly of the closed process chamber, and gas outlets communicating with the annular chamber and opening on a surface of the lid facing inwardly of the closed process chamber.

Abstract: A device for measuring the distribution and/or impulse of a series of droplets comprises a piezoelectric sensor positioned relative to a source of droplets such that each of a plurality of droplets contacts the piezoelectric sensor in succession, thereby to generate an electrical signal. Logic circuitry is configured to calculate one or more frequencies from the electrical signal.

Abstract: A method and device for treating a wafer-shaped article utilizes a novel clamping mechanism, which permits wafer shift to be performed with reduced wear to the chuck pins. A wafer is rotated on a spin chuck that has a plurality of pins positioned at a periphery of the wafer shaped article. The pins each have a head portion which, in a service position, extends radially inwardly of and above the wafer. Gas is supplied onto a surface of the wafer facing the spin chuck at a flow rate sufficient to displace the wafer upwardly into contact with the head portions of the pins. This serves to clamp the wafer against the head portions of the pins. However, the pins contact the wafer only on upwardly oriented wafer surfaces and the wafer is supported from below solely by the gas flow.

Abstract: An apparatus for processing wafer-shaped articles comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the closed process chamber, and is adapted to hold a wafer shaped article thereon. A lid is secured to an upper part of the closed process chamber. The lid comprises an annular chamber, gas inlets communicating with the annular chamber and opening on a surface of the lid facing outwardly of the closed process chamber, and gas outlets communicating with the annular chamber and opening on a surface of the lid facing inwardly of the closed process chamber.

Abstract: An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared heating elements are mounted in a stationary manner with respect to rotation of said spin chuck. The infrared heating elements are arranged in a nested configuration so as to define individually controllable inner, middle and outer heating zones adjacent a disc-shaped article when positioned on the spin chuck.

Abstract: An apparatus and method for processing wafer-shaped articles utilizes at least first and second liquid-dispensing nozzles, wherein a first liquid-dispensing nozzle is positioned closer to an axis of rotation than the second liquid-dispensing nozzle. A liquid supply system supplies heated process liquid to the nozzles such that process liquid dispensed from the first nozzle has a temperature that differs by an amount within a predetermined range from a temperature of process liquid dispensed from the second liquid-dispensing nozzle.

Abstract: A method and device for treating a wafer-shaped article utilizes a novel clamping mechanism, which permits wafer shift to be performed with reduced wear to the chuck pins. A wafer is rotated on a spin chuck that has a plurality of pins positioned at a periphery of the wafer shaped article. The pins each have a head portion which, in a service position, extends radially inwardly of and above the wafer. Gas is supplied onto a surface of the wafer facing the spin chuck at a flow rate sufficient to displace the wafer upwardly into contact with the head portions of the pins. This serves to clamp the wafer against the head portions of the pins. However, the pins contact the wafer only on upwardly oriented wafer surfaces and the wafer is supported from below solely by the gas flow.

Abstract: Method for drying a surface of a disc-shaped article includes covering the surface with a rinsing liquid, whereby a closed liquid layer is formed, and removing the rinsing liquid, wherein the rinsing liquid containing at least 50 wt. % water and at least 5 wt. % of a substance, wherein the substance lowers the surface energy of water, wherein the removing of the liquid is initiated by blowing gas onto the closed liquid layer, whereby the closed liquid layer is opened at on discrete area.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, in which a mask is kept at a defined short distance to the wafer-shaped article such that liquid can be retained between the mask and the defined area of the wafer-shaped article by capillary force.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, in which a mask is kept at a defined short distance to the wafer-shaped article such that liquid can be retained between the mask and the defined area of the wafer-shaped article by capillary forces.