Abstract: An apparatus for large area plasma processing according to the invention comprises at least one plane antenna (A) having a plurality of interconnected elementary resonant meshes (M1, M2, M3), each mesh (M1, M2, M3) comprising at least two conductive legs (1, 2) and at least two capacitors (5, 6). A radiofrequency generator excites said antenna (A) to at least one of its resonant frequencies. A process chamber is in proximity of said antenna (A). Said antenna (A) produces an electromagnetic field pattern with a very well defined spatial structure, which allows a great control on the excitation of the plasma.

Abstract: A high density RF plasma source uses a special antenna configuration to launch waves at frequencies such as 13.56 MHz. The tunability of this antenna allows one to adapt actively the coupling of the RF energy into an evolutive plasma as found in plasma processing in semiconductor manufacturing. The plasma source can be used for plasma etching, deposition, sputtering systems, space propulsion, plasma based sterilization, and plasma abatement systems. Also, the plasma source can be used with one or several process chambers, which comprise an array of magnets and RF coils too. These elements can be used for plasma confinement or active plasma control (plasma rotation) thanks to a feedback control approach, and for in situ NMR monitoring or analysis such as moisture monitoring inside a process chamber, before or after the plasma process, or for in situ NMR inspection of wafers or others work pieces.

Abstract: A method of modifying a boundary region (9) of a substrate (3) bounded by a surface (10), wherein an evacuated process chamber (2) is provided having a plasma source (4) for generating a directed plasma jet (5), and wherein furthermore a reactive component is supplied into the process chamber (2) with a flow of a predefined size, and wherein the substrate (3) is heated to a predefined reaction temperature, characterized in that the reactive component is diffusion-activated by the directed plasma jet (5) such that the reactive component diffuses into the boundary region (11) of the substrate (3) at a predefinable diffusion rate.

Abstract: A plasma coating plant for coating or treating the surface of a substrate having a work chamber which can be evacuated and into which the substrate can be placed, and having a plasma torch for generating a plasma jet by heating a process gas, wherein the plasma torch has a nozzle through which the plasma jet can exit the plasma torch and can extend along a longitudinal axis (A) into the work chamber, wherein a mechanical limiting apparatus is provided downstream of the nozzle in the work chamber, which mechanical limiting apparatus extends along the longitudinal axis (A) and protects the plasma jet against an unwanted lateral intrusion of particles. A corresponding method is also disclosed.

Abstract: An apparatus for large area plasma processing according to the invention comprises at least one plane antenna (A) having a plurality of interconnected elementary resonant meshes (M1, M2, M3), each mesh (M1, M2, M3) comprising at least two conductive legs (1, 2) and at least two capacitors (5, 6). A radiofrequency generator excites said antenna (A) to at least one of its resonant frequencies. A process chamber is in proximity of said antenna (A). Said antenna (A) produces an electromagnetic field pattern with a very well defined spatial structure, which allows a great control on the excitation of the plasma.

Abstract: The high density RF plasma source of this invention uses a special antenna configuration to launch waves at frequency such as 13,56 MHz. The tunability of this antenna allows to adapt actively the coupling of the RF energy into an evolutive plasma as found in plasma processings in semiconductor manufacturing. This plasma source can be used for the following applications: plasma etching, deposition, sputtering systems, space propulsion, plasma-based sterilization, plasma abatement system. In another embodiment, the plasma source is in conjunction with one or several process chambers, which comprise an array of magnets and RF coils too . These elements can be used, on one hand, for plasma confinement or the active plasma control (Plasma rotation) thanks to feedback control approach, and one the other hand, for in situ NMR Monitoring or analysis such as moisture monitoring inside a process chamber, before or after the plasma process, or for in situ NMR Inspection of wafers or others workpieces.