Patents by Inventor Philippe Guyot-Sionnest

Philippe Guyot-Sionnest has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MULTI-BAND INFRARED IMAGING USING STACKED COLLOIDAL QUANTUM-DOT PHOTODIODES
    Publication number: 20220085225
    Abstract: Photodetectors based on colloidal quantum dots and methods of making the photodetectors are provided. Also provided are methods for doping films of colloidal quantum dots via a solid-state cation exchange method. The photodetectors include multi-band photodetectors composed of two or more rectifying photodiodes stacked in aback-to-back configuration. The doping methods rely on a solid-state cation exchange that employs sacrificial semiconductor nanoparticles as a dopant source for a film of colloidal quantum dots.
    Type: Application
    Filed: January 31, 2020
    Publication date: March 17, 2022
    Inventors: Philippe Guyot-Sionnest, Xin Tang, Matthew M. Ackerman
  • Mid-infrared photodetectors
    Patent number: 10290753
    Abstract: Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 ?m to 12 ?m and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors.
    Type: Grant
    Filed: March 7, 2016
    Date of Patent: May 14, 2019
    Assignee: The University of Chicago
    Inventors: Philippe Guyot-Sionnest, Sean E. Keuleyan, Emmanuel Lhuillier
  • MID-INFRARED PHOTODETECTORS
    Publication number: 20160258809
    Abstract: Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 ?m to 12 ?m and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors.
    Type: Application
    Filed: March 7, 2016
    Publication date: September 8, 2016
    Inventors: Philippe Guyot-Sionnest, Sean E. Keuleyan, Emmanuel Lhuillier
  • Mid-infrared photodetectors
    Patent number: 9318628
    Abstract: Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 ?m to 12 ?m and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors.
    Type: Grant
    Filed: May 21, 2012
    Date of Patent: April 19, 2016
    Assignee: The University of Chicago
    Inventors: Philippe Guyot-Sionnest, Sean E. Keuleyan, Emmanuel Lhuillier
  • MID-INFRARED PHOTODETECTORS
    Publication number: 20140299772
    Abstract: Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 ?m to 12 ?m and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors.
    Type: Application
    Filed: May 21, 2012
    Publication date: October 9, 2014
    Applicant: THE UNIVERSITY OF CHICAGO
    Inventors: Philippe Guyot-Sionnest, Sean E. Keuleyan, Emmanuel Lhuillier
  • Atomic layer deposition for functionalizing colloidal and semiconductor particles
    Patent number: 8012860
    Abstract: A method for producing a product of a functionalized nanocomposition colloidal material using atomic layer deposition to coat the colloidal material. The ALD layer comprises an inorganic material which enables improved optical and electrical properties for the nanocomposite.
    Type: Grant
    Filed: June 16, 2009
    Date of Patent: September 6, 2011
    Assignee: UChicago Argonne, LLC
    Inventors: Jeffrey W. Elam, Philippe Guyot-Sionnest
  • ATOMIC LAYER DEPOSITION FOR FUNCTIONALIZING COLLOIDAL AND SEMICONDUCTOR PARTICLES
    Publication number: 20090315016
    Abstract: A method for producing a product of a functionalized nanocomposition colloidal material using atomic layer deposition to coat the colloidal material. The ALD layer comprises an inorganic material which enables improved optical and electrical properties for the nanocomposite.
    Type: Application
    Filed: June 16, 2009
    Publication date: December 24, 2009
    Inventors: Jeffrey W. ELAM, Philippe Guyot-Sionnest
  • Doped semiconductor nanocrystals
    Patent number: 7227177
    Abstract: A particle, includes a semiconductor nanocrystal. The nanocrystal is doped.
    Type: Grant
    Filed: April 21, 2005
    Date of Patent: June 5, 2007
    Assignee: Arch Development Corporation
    Inventors: Philippe Guyot-Sionnest, Moonsub Shim, Conjun Wang
  • Doped semiconductor nanocrystals
    Patent number: 6939604
    Abstract: A particle, includes a semiconductor nanocrystal. The nanocrystal is doped.
    Type: Grant
    Filed: October 19, 2000
    Date of Patent: September 6, 2005
    Assignee: Arch Development Corporation
    Inventors: Philippe Guyot-Sionnest, Moonsub Shim, Conjun Wang
  • Doped semiconductor nanocrystals
    Publication number: 20050189534
    Abstract: A particle, includes a semiconductor nanocrystal. The nanocrystal is doped.
    Type: Application
    Filed: April 21, 2005
    Publication date: September 1, 2005
    Inventors: Philippe Guyot-Sionnest, Moonsub Shim, Conjun Wang