Abstract: The present disclosure relates to semiconductor devices for detecting fluorescent particles. At least one embodiment relates to an integrated semiconductor device for detecting fluorescent tags. The device includes a first layer, a second layer, a third layer, a fourth layer, and a fifth layer. The first layer includes a detector element. The second layer includes a rejection filter. The third layer is fabricated from dielectric material. The fourth layer is an optical waveguide configured and positioned such that a top surface of the fourth layer is illuminated with an evanescent tail of excitation light guided by the optical waveguide when the fluorescent tags are present. The fifth layer includes a microfluidic channel. The optical waveguide is configured and positioned such that the microfluidic channel is illuminated with the evanescent tail. The detector element is positioned such that light from activated fluorescent tags can be received.

Abstract: The present disclosure relates to semiconductor devices for detecting fluorescent particles. At least one embodiment relates to an integrated semiconductor device for detecting fluorescent tags. The device includes a first layer, a second layer, a third layer, a fourth layer, and a fifth layer. The first layer includes a detector element. The second layer includes a rejection filter. The third layer is fabricated from dielectric material. The fourth layer is an optical waveguide configured and positioned such that a top surface of the fourth layer is illuminated with an evanescent tail of excitation light guided by the optical waveguide when the fluorescent tags are present. The fifth layer includes a microfluidic channel. The optical waveguide is configured and positioned such that the microfluidic channel is illuminated with the evanescent tail. The detector element is positioned such that light from activated fluorescent tags can be received.

Abstract: In a MEMS element 500 where a MEMS structure 201 is hermetically sealed in a cavity 110 by a substrate 301 and laminated structure 120, interface sealing layers 101, 102 and 103 are provided between two layers that constitute the laminated structure 120, so as to prevent gas from breaking into the cavity 110 through the interface between two layers along the direction parallel to the surface of the substrate 301.

Abstract: In a MEMS element 500 where a MEMS structure 201 is hermetically sealed in a cavity 110 by a substrate 301 and laminated structure 120, interface sealing layers 101, 102 and 103 are provided between two layers that constitute the laminated structure 120, so as to prevent gas from breaking into the cavity 110 through the interface between two layers along the direction parallel to the surface of the substrate 301.

Abstract: A method for sealing a cavity is disclosed. The method includes depositing a membrane layer on top of a sacrificial layer, etching release holes into the membrane layer, and removing at least a portion of the sacrificial layer through the release holes to form a cavity. Prior to removing the sacrificial layer portion, the method includes producing a narrowing layer on the side walls of the release holes. The narrowing layer can be a sealing layer that seals off the release holes after a reflow step. Alternatively, the narrowing layer can be a layer that does not have a sealing function and is used to narrow the holes, allowing the holes to be sealed without a sealing or other material entering the cavity. The narrowing layer may be deposited by conformal deposition followed by an anisotropic etch or by direct deposition on the side walls of the release holes.

Abstract: The invention relates to a marking device (1) comprising an element which is made from a semi-conductor material having patterns (2-4, 12-14) which are hollowed out of the face thereof, the arrangement of said patterns being representative of at least one piece of information. The depth of the patterns (2-4, 12-14) can vary from one pattern to another and can adopt a plurality of different values which are representative of an additional piece of information. The invention also relates to an apparatus which is used to detect such marks and to articles having a marking device of said type integrated into the material forming same.

Abstract: An optical switching matrix, including optical input fibers (12) and optical output fibers (14) oriented substantially perpendicular to each other, moveable mirrors (5, 13) placed at the intersections of the directions defined by the various optical fibers, each mirror (13) being capable of moving in order to reflect a beam coming from an optical input fiber, bound for an optical output fiber, and a set of channels defined between the mirrors, inside which the various beams are propagated before and after having encountered the mirrors. The set of mirrors are made on a first substrate wafer (2) that is covered with a second substrate wafer (20), and the various channels (38) are formed between protruding zones (34) present under the second substrate wafers. The protruding zones include housings (33) inside which the moveable mirrors are able to move.

Abstract: A process for fabricating a microelectromechanical optical component from a silicon substrate is disclosed. The component comprises optical propagation guides; a wall which can move with respect to the propagation guides; and an electrostatic actuator associated with return means formed by at least one beam capable of causing the moving wall to move with respect to the rest of the substrate. The substrate is single-crystal silicon having (111) crystallographic planes parallel to the plane of the substrate. The process comprises a first series of deep reactive ion etching steps during which the heights of the moving wall, of the electrodes of the actuator, and of the beams of the return means of the actuator are defined with different values, and a second wet etching step, making it possible to free the moving wall, the electrodes and the beams from the rest of the substrate.

Abstract: A mechanical optic switch is disclosed that is of high mirror quality, high in the accuracy of opto-axial alignment between a mirror and a fiber aligning structure and yet of low insertion loss, permitting fiber optic switching by an electromagnetic force. It is made by a crystallographically oriented face dependent etching process, which simultaneously forms in a Si (100) crystallographically faced single crystal substrate (1), V-grooves (3) for fixing optical fibers (2, 2a, 2b, 2c, 2d) with the V-groove's longitudinal axes oriented in the <110> crystallographic direction or in a direction equivalent thereto; and a resilient support beam (5) and a mirror (4, 6) with the longitudinal axis of the resilient support beam and the mirror surface of the mirror oriented in the <100> direction or in a direction equivalent thereto. Slitting into the substrate from a rear surface thereof by etching renders the support beam resilient and flexible.

Abstract: An optical switching matrix, made from a semiconductor-D dielectric-based substrate, comprising:

Abstract: Process for fabricating a microelectromechanical optical component (1) produced from a silicon substrate, comprising:

Abstract: A mechanical optic switch is disclosed that is of high miller quality, high in the accuracy of opto-axial alignment between a miller and a fiber aligning structure and yet of low insertion loss, permitting fiber optic switching by an electromagnetic force. It is made by a crystallographically oriented face dependent etching process, which simultaneously forms in a Si (100) crystallographically faced single crystal substrate (1), V-grooves (3) for fixing optical fibers (2, 2a, 2b, 2c, 2d) with the V-groove's longitudinal axes oriented in the <110> crystallographic direction or in a direction equivalent thereto; and a resilient support beam (5) and a miller (4, 6) with the longitudinal axis of the resilient support beam and the miller surface of the miller oriented in the <100> direction or in a direction equivalent thereto. Slitting into the substrate from a rear surface thereof by etching renders the support beam resilient and flexible.