Abstract: A pumping system comprising at least one pump unit (2) with a vacuum pump casing in which there are multiple pumping stages that includes at least one pumped gas treatment system is provided. The pumped gas treatment system compromises at least one plasma source located inside the vacuum pump casing of the pump unit, to generate a plasma that at least partially decomposes certain gases passing through the pump unit. This reduces the size of the pumped gas treatment system and improves its efficiency so that a gas pumping and treatment system can be created that is sufficiently small as to allow it to be placed in close proximity to the process chambers.

Abstract: The invention relates to a piece of equipment for producing semiconductors, comprising a process chamber (2), a substrate holder (5) for holding a substrate (6) for processing within said chamber (2) and a pumping device (4), comprising a vacuum pump (7) in which a flow of gas for pumping may flow between a gas inlet (9) and a gas outlet (10) of which said inlet (9) is connected to the process chamber (2), the substrate holder (5) and the vacuum pump (7) being in the same axis (12), the substrate holder (5) being arranged upstream of said inlet (9) of said vacuum pump (7) in the flow of gas for pumping, characterised in that the pumping device (4) comprises a gas pressure regulation means (8) at the outlet (10) of the vacuum pump (7), for controlling the pressure of the gas at the inlet (9) of the vacuum pump (7) and that the substrate holder (5) comprises at least three support branches (21) connected to a support (20) on the substrate holder (5) in order to fix the support (20) to the process chamber (2) an

Abstract: According to the invention, a pumping system comprises at least one pump unit (2) with a vacuum pump casing in which there are multiple pumping stages (5, 6, 7, 8, 9) that includes at least one pumped gas treatment system, characterised by the fact that the pumped gas treatment compromises at least one plasma source (15, 16, 26, 27), located inside the vacuum pump casing of the pump unit (2), to generate a plasma that at least partially decomposes certain gases passing through the pump unit (2). This considerably reduces the size of the pumped gas treatment system and improves its efficiency so that a gas pumping and treatment system can be created that is sufficiently small as to allow it to be placed in close proximity to the process chambers.

Abstract: The invention relates to a gas analysis system for analyzing gases in an enclosure under controlled pressure, which system comprises apparatus for ionizing the gases to be analyzed, and apparatus for analyzing the ionized gases. According to the invention the apparatus for ionizing the gases to be analyzed comprises a dedicated plasma source in contact with the gases contained in the enclosure and combined with a generator for generating a plasma from the gases to be analyzed; and the apparatus for analyzing the ionized gases comprises a radiation sensor situated in the vicinity of the zone in which the plasma is generated, and connected to an optical spectrometer for analyzing the variation of the radiation spectrum emitted by the generated plasma.

Abstract: The invention relates to a gas analysis system for analyzing gases in an enclosure under controlled pressure, which system comprises apparatus for ionizing the gases to be analyzed, and apparatus for analyzing the ionized gases.

Abstract: The invention relates to a system for regulating the pressure in an enclosure (1) that is to contain processed gas for manufacturing semiconductor components or micro- or nano-technology devices, the enclosure being connected by pipework (2) to a pump unit (3) comprising a dry mechanical primary pump (4) and at least one secondary pump (5). According to the invention, the system further comprises a speed controller (6) controlling simultaneously the speeds of rotation of the dry mechanical primary pump (4) and of said at least one secondary pump (5).