Abstract: Methods and systems are provided for a single element ultrasound transducer. In one embodiment, a method for the transducer comprises laminating a comb structure and a conductive base package into an acoustic stack with a non-conductive glue, grinding the acoustic stack, and dicing the ground acoustic stack along a plane extending from the top surface of the second fin of the conductive base package to the bottom surface of the acoustic stack. The resulting transducer may have a flat front face with a non-conductive groove separating a ground pad formed by the conductive base package from a signal pad formed by a matching layer of the comb structure.

Abstract: Methods and systems are provided for a single element ultrasound transducer. In one embodiment, the ultrasound transducer comprises: a piezoelectric layer, a matching layer, one surface of the matching layer is electrically coupled to a top surface of the piezoelectric layer and another surface of the matching layer forms a signal pad within a front face of the ultrasound transducer, and a base package electrically coupled to a bottom surface of the piezoelectric layer, the base package extending horizontally and laterally to form a back face of the ultrasound transducer parallel to the front face of the ultrasound transducer, and extending vertically relative to the back face of the ultrasound transducer to form a ground pad within the front face of the ultrasound transducer. In this way, the transducer can work robustly and may be automatically mounted to a flat substrate with printed circuit.

Abstract: Methods and systems are provided for a single element ultrasound transducer. In one embodiment, the ultrasound transducer comprises: a piezoelectric layer, a matching layer, one surface of the matching layer is electrically coupled to a top surface of the piezoelectric layer and another surface of the matching layer forms a signal pad within a front face of the ultrasound transducer, and a base package electrically coupled to a bottom surface of the piezoelectric layer, the base package extending horizontally and laterally to form a back face of the ultrasound transducer parallel to the front face of the ultrasound transducer, and extending vertically relative to the back face of the ultrasound transducer to form a ground pad within the front face of the ultrasound transducer. In this way, the transducer can work robustly and may be automatically mounted to a flat substrate with printed circuit.

Abstract: Methods and systems are provided for a single element ultrasound transducer. In one embodiment, the ultrasound transducer comprises: a piezoelectric layer, a matching layer, one surface of the matching layer is electrically coupled to a top surface of the piezoelectric layer and another surface of the matching layer forms a signal pad within a front face of the ultrasound transducer, and a base package electrically coupled to a bottom surface of the piezoelectric layer, the base package extending horizontally and laterally to form a back face of the ultrasound transducer parallel to the front face of the ultrasound transducer, and extending vertically relative to the back face of the ultrasound transducer to form a ground pad within the front face of the ultrasound transducer. In this way, the transducer can work robustly and may be automatically mounted to a flat substrate with printed circuit.

Abstract: A pressure and temperature sensor comprising comprises at least a first resonator of the SAW type comprising a piezoelectric substrate, thinned at least locally, of the membrane type, a second resonator of the SAW type comprising a piezoelectric substrate and a third resonator of the SAW type comprising a piezoelectric substrate, characterized in that the first, the second and the third resonators are respectively on the surface of first, second and third individual piezoelectric substrates, each of the individual substrates being positioned on the surface of a common base section, locally machined away under said first resonator in such a manner as to liberate the substrate from said resonator so as to render it operational for the measurement of pressure. A method of fabrication for such a sensor is also provided.

Abstract: A remotely interrogatable pressure and/or temperature measuring device includes at least an acoustic wave sensor including at least one resonator coupled to a first antenna element, and an interrogation system including a second antenna element for transmission and reception. The device further includes an expandable tubular structure, the structure integrating a biocompatible material, and the acoustic wave sensor is encapsulated in the biocompatible material. The second antenna element operates at frequencies above several tens of MegaHertz.

Abstract: A pressure and temperature sensor comprising comprises at least a first resonator of the SAW type comprising a piezoelectric substrate, thinned at least locally, of the membrane type, a second resonator of the SAW type comprising a piezoelectric substrate and a third resonator of the SAW type comprising a piezoelectric substrate, characterized in that the first, the second and the third resonators are respectively on the surface of first, second and third individual piezoelectric substrates, each of the individual substrates being positioned on the surface of a common base section, locally machined away under said first resonator in such a manner as to liberate the substrate from said resonator so as to render it operational for the measurement of pressure. A method of fabrication for such a sensor is also provided.

Abstract: A remotely interrogatable pressure and/or temperature measuring device includes at least an acoustic wave sensor including at least one resonator coupled to a first antenna element, and an interrogation system including a second antenna element for transmission and reception. The device further includes an expandable tubular structure, the structure integrating a biocompatible material, and the acoustic wave sensor is encapsulated in the biocompatible material. The second antenna element operates at frequencies above several tens of MegaHertz.