Abstract: This system for measuring the propagation of a zone of separation between a first portion and a second portion of at least one substrate includes: a module for emitting at least two incident beams each of which illuminates a separate point on the substrate, the at least two incident beams being able to pass through the first portion and the zone of separation and meet the second portion in such a way that each of them generates at least one first emergent beam Fe originating from the interface between the first portion and the zone of separation, and at least one second emergent beam originating from the interface between the zone of separation and the second portion; a detecting module for detecting light intensity values resulting from interference between the first and second emergent beams; and a computer for determining the conditions of the propagation of the zone of separation.

Abstract: This system for measuring the propagation of a zone of separation between a first portion and a second portion of at least one substrate includes: a module for emitting at least two incident beams each of which illuminates a separate point on the substrate, the at least two incident beams being able to pass through the first portion and the zone of separation and meet the second portion in such a way that each of them generates at least one first emergent beam Fe originating from the interface between the first portion and the zone of separation, and at least one second emergent beam originating from the interface between the zone of separation and the second portion; a detecting module for detecting light intensity values resulting from interference between the first and second emergent beams; and a computer for determining the conditions of the propagation of the zone of separation.

Abstract: A device for separation of a stack in two distinct parts, including a first part, a second part and a zone of weakness between the first and second parts, and an insertion zone located at the periphery of the stack at or close to the zone of weakness, extending over all or part of the periphery of the stack. The device includes at least one separator capable of penetrating into the insertion zone along a penetration distance until coming into contact with the first part of the stack at at least one first contact point located at the periphery of the stack, and coming into contact with the second part of the stack at at least one second contact point located at the periphery of the stack. The device also includes drive means for making the separator penetrate into the insertion zone as far as the penetration distance and for applying a relative movement between the separator and the stack.

Abstract: The invention relates to a method of producing a complex microelectronic structure, in which two basic microelectronic structures (1, 3) are assembled at the two respective connecting faces (3) thereof. The invention is characterised in that, before assembly, a difference is created in the tangential stress state between the two faces to be assembled, said difference being selected such as to produce a pre-determined stress state within the assembled structure under given conditions in relation to the assembly conditions.

Abstract: A process and device for separating two semi-conductor substrate wafers along an interface. The process includes forming a cavity, and initiating separation by applying force to the interface through the cavity. The device utilizes fluid or gas, and pressure chambers, to subject adherent faces of the interface to at least one of chemical or mechanical action.