Abstract: The invention relates to the fabrication of optical microsystems for miniature cameras or miniature matrix displays. It is proposed that N dot matrix arrays and associated circuits should be collectively fabricated, on the front of a semiconductor wafer, to produce N identical chips, with on the side of each array, external connection lands; a plate, used to collectively form N identical optical image-forming structures, each optical image-forming structure covering a respective chip and being designed to form an overall image corresponding with the whole of the matrix array of the respective chip, is fabricated collectively and placed in close contact with the front of the semiconductor wafer; through the thickness of the wafer, conductive vias extending to the contact lands are opened, and, only after these various operations, the wafer is divided into N individual optical microsystems comprising an electronic chip covered by an optical structure.

Abstract: The invention relates to the collective fabrication of superposed microstructures, such as an integrated circuit and a protective cover. Individual structures each comprising superposed first and second elements are fabricated collectively. The first elements (for example, integrated circuit chips) are prepared on a first plate and the second elements (for example, transparent covers) are prepared on a second plate. The plates are bonded to each other over the major portion of their facing surfaces, but with no bonding of the defined zones in which there is no adhesion. The individual structures are then diced via the top on the one hand and via the bottom on the other hand along different parallel dicing lines passing through the zones with no adhesion, so that, after dicing, the first elements retain surface portions (those lying between the parallel dicing lines) that are not covered by a second element. A connection pad may thus remain accessible at this point.

Abstract: The invention relates to the collective fabrication of superposed microstructures, such as an integrated circuit and a protective cover. Individual structures each comprising superposed first and second elements are fabricated collectively. The first elements (for example, integrated circuit chips) are prepared on a first plate and the second elements (for example, transparent covers) are prepared on a second plate. The plates are bonded to each other over the major portion of their facing surfaces, but with no bonding of the defined zones in which there is no adhesion. The individual structures are then diced via the top on the one hand and via the bottom on the other hand along different parallel dicing lines passing through the zones with no adhesion, so that, after dicing, the first elements retain surface portions (those lying between the parallel dicing lines) that are not covered by a second element. A connection pad may thus remain accessible at this point.

Abstract: The invention relates to the fabrication of optical microsystems for miniature cameras or miniature matrix displays. It is proposed that N dot matrix arrays and associated circuits should be collectively fabricated, on the front of a semiconductor wafer, to produce N identical chips, with on the side of each array, external connection lands; a plate, used to collectively form N identical optical image-forming structures, each optical image-forming structure covering a respective chip and being designed to form an overall image corresponding with the whole of the matrix array of the respective chip, is fabricated collectively and placed in close contact with the front of the semiconductor wafer; through the thickness of the wafer, conductive vias extending to the contact lands are opened, and, only after these various operations, the wafer is divided into N individual optical microsystems comprising an electronic chip covered by an optical structure.

Abstract: The invention relates to the fabrication of optical microsystems for miniature cameras or miniature matrix displays. It is proposed that N dot matrix arrays and associated circuits should be collectively fabricated, on the front of a semiconductor wafer, to produce N identical chips, with on the side of each array, external connection lands; a plate, used to collectively form N identical optical image-forming structures, each optical image-forming structure covering a respective chip and being designed to form an overall image corresponding with the whole of the matrix array of the respective chip, is fabricated collectively and placed in close contact with the front of the semiconductor wafer; through the thickness of the wafer, conductive vias extending to the contact lands are opened, and, only after these various operations, the wafer is divided into N individual optical microsystems comprising an electronic chip covered by an optical structure.

Abstract: The invention relates to very small-sized color image sensors. The sensor according to the invention is made by the following method: the formation, on the front face of the semiconductive wafer (10), of a series of active zones (ZA) comprising image detection circuits and each corresponding to a respective image sensor, each active zone comprising photosensitive zones (12) covered with conductive and insulating layers (14, 16) enabling the collection of electrical charges generated in the photosensitive zones, the transfer of the wafer (10) by its front face against the front face of a supporting substrate (20), the elimination of the major part of the thickness of the semiconductive wafer, leaving a very fine semiconductive layer (30) on the substrate, this fine semiconductive layer comprising the photosensitive zones, the deposition and etching of color filters (18) on the semiconductive layer thus thinned.

Abstract: The invention relates to liquid crystal matrix micro displays, and in particular those which are embodied on a monolithic silicon substrate in which are integrated the electronic circuits for control of a matrix array of liquid crystal cells. The matrix comprises, for each dot at the crossover of a row and of a column, an elementary electronic circuit for controlling an elementary liquid crystal cell situated at this crossover. This circuit comprises at least one storage capacitor for storing for the duration of an image frame an analogue voltage applied by the column, a first terminal of the storage capacitor being linked to the gate of the transistor, and, in series between two voltage supply terminals, an elementary current source and a switching transistor, the drain of the switching transistor being linked to the liquid crystal cell. A periodic voltage ramp, common to all the cells of at least one row, is applied to a second terminal of the storage capacitor of the cells of this row.

Abstract: The invention relates to the fabrication of optical microsystems for miniature cameras or miniature matrix displays. It is proposed that N dot matrix arrays and associated circuits should be collectively fabricated, on the front of a semiconductor wafer, to produce N identical chips, with on the side of each array, external connection lands; a plate, used to collectively form N identical optical image-forming structures, each optical image-forming structure covering a respective chip and being designed to form an overall image corresponding with the whole of the matrix array of the respective chip, is fabricated collectively and placed in close contact with the front of the semiconductor wafer; through the thickness of the wafer, conductive vias extending to the contact lands are opened, and, only after these various operations, the wafer is divided into N individual optical microsystems comprising an electronic chip covered by an optical structure.

Abstract: The invention relates to the making of color image sensors for miniature cameras. The method of fabrication includes the formation on the front face of a semi-conductive wafer of a series of active zones comprising image detection circuits, each corresponding to a respective image sensor. Each active zone is surrounded by input/output pads. The wafer is transferred by its front fact against the front face of a supporting substrate. The major part of the thickness of the semiconductor wafer is eliminated, leaving a very fine semi-conductive layer including the image detection circuits on the substrate. This method is characterized in that firstly, layers of color filters are deposited and then etched on the semi-conductive layer thus thinned.

Abstract: The invention relates to the making of color image sensors for miniature cameras.

Abstract: The invention relates to very small-sized color image sensors.

Abstract: The present invention relates to a flat display screen including a light-emitting source organized in a first array of strips generally parallel in a first direction, and at least one second opaque array, interposed between the light-emitting source and a display surface, and organized in a second direction generally non-perpendicular to the first direction, at least one of the arrays exhibiting, along an axis parallel to the general direction of the first array and whatever the position of this axis in a perpendicular direction, a constant proportion of transparent surface for an elementary pattern.

Abstract: A display screen which does not have moire effects. The transparency of an intermediate subassembly, through which the observation is made, is substantially constant at the scale of an anode subassembly. The patterns of the intermediate subassemblies have a sufficiently low periodicity in at least one direction. This may be used in the production of display screens with micropoints.