Abstract: The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.

Abstract: The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.

Abstract: The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.

Abstract: The invention is directed to a chemical-mechanical polishing composition comprising (a) an abrasive consisting essentially of aggregated silica, (b) an acid, and (c) a liquid carrier, wherein the polishing composition has a pH of about 5 or less. The invention is also directed to a method of polishing a substrate comprising a dielectric layer using the polishing composition.

Abstract: The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.

Abstract: The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.

Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a benzotriazole derivative, an oxidizing agent selected from the group consisting of iodate compounds, organic oxidizing agents, and mixtures thereof, and water, wherein the polishing composition comprises substantially no organic carboxylic acid having a molecular weight of less than about 500 Daltons, and wherein the polishing composition comprises no alkyl sulfate having a molecular weight of less than about 500 Daltons. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.

Abstract: The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive, iodate ion, a nitrogen-containing compound selected from the group consisting of a nitrogen-containing C4-20 heterocycle and a C1-20 alkylamine, and a liquid carrier comprising water.

Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives). The invention further provides a method of chemically-mechanically polishing a substrate with the CMP compositions, as well as a method of enhancing the shelf-life of CMP compositions containing an amine and a radical-forming oxidizing agent, in which a radical trapping agent is added to the CMP composition.

Abstract: A vacuum cleaner current-carrying hose connection system is disclosed having a female connection end on a first vacuum cleaner current-carrying hose adapted for receiving a male connection end on a second vacuum cleaner current-carrying hose. The male connection has at least two male receptor plugs configured for inserting into female receptor holes in the female connection end. A vacuum cleaner hose connection system is further disclosed having a male connection end that has at least two male receptor plugs for transmitting current, a female connection end having at least two female receptor holes for receiving the male receptor plugs, and the male and female connection ends being rotatably movable, about the longitudinal axis of at least one of the female connection end and the male connection end, between an unengaged position and an engaged position.

Abstract: The inventive chemical-mechanical polishing composition comprises an abrasive, a nitride accelerator, and water, and has a pH of about 1 to about 6. The inventive method of polishing a substrate involves the use of the aforesaid polishing composition and is particularly useful in polishing a substrate containing silicon nitride.

Abstract: The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing an ITO surface. The compositions of the invention comprise a particulate zirconium oxide or colloidal silica abrasive, which has a mean particle size of not more than about 150 nm, suspended in an aqueous carrier, which preferably has a pH of not more than about 5. Preferably, the abrasive has a surface area in the range of about 40 to about 220 m2/g. The CMP compositions of the invention provide an acceptably low surface roughness when used to polish an ITO surface, providing clean and uniform surfaces.

Abstract: The invention provides a composition for chemical-mechanical polishing, The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.

Abstract: The invention provides a chemical-mechanical polishing system for polishing a substrate comprising a polishing component, a water-soluble silicate compound, an oxidizing agent, and water, wherein the pH of the polishing system is about 8 to about 12. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing system. The polishing system provides for reduced friction during polishing of substrates.

Abstract: The invention provides compositions and methods for planarizing or polishing a metal surface. The composition comprises an abrasive, cesium ions, and a liquid carrier comprising water.

Abstract: The present invention relates to watercraft, and in particular to small watercraft used in fishing, hunting and similar recreation on lakes and streams. The watercraft has a displacement hull and a pontoon attached to the hull. The pontoon has an elongated float and an arm, integral with the float and radiating therefrom, for attachment to the hull. The hull has a substantially round bottom and a gunwale and the pontoon is attached directly to the hull, proximate the gunwale.

Abstract: The present invention relates to a safety-conscious quick-connect/quick-release apparatus for attaching a pontoon to a watercraft.

Abstract: The invention provides a method of determining at least one electrochemical characteristic of a chemical-mechanical or electrochemical-mechanical polishing system comprising application of a potential between a polishing substrate and an electrode to generate a current, and determining the at least one electrochemical characteristic by analysis of the current as a function of time.

Abstract: The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The polishing additive comprises a functional group having a pKa of about 3 to about 9 and is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof. The invention is further directed to the chemical-mechanical polishing system, wherein the inorganic abrasive is ceria.

Abstract: The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The polishing additive comprises a functional group having a pKa of about 4 to about 9 and is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof. The invention is further directed to the chemical-mechanical polishing system, wherein the inorganic abrasive is ceria.