Patents by Inventor Phillip D. Hustad

Phillip D. Hustad has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240075720
    Abstract: The present disclosure provides a multilayer film. The multilayer film includes at least two layers including a sealant layer and a second layer in contact with the sealant layer. The sealant layer contains (A) a first ethylene-based polymer having a density from 0.900 g/cc to 0.925 g/cc and a melt index from 0.5 g/10 min to 30 g/10 min; and (B) a polyethylene-polydimethylsiloxane block copolymer having a weight average molecular weight from 1,000 g/mol to 10,000 g/mol. The second layer contains a second ethylene-based polymer.
    Type: Application
    Filed: October 25, 2023
    Publication date: March 7, 2024
    Inventors: Rahul Sharma, Jeffrey D. Weinhold, Phillip D. Hustad, Megan E. Donaldson, Xiaoyong Li, Joseph C. Neuman, Yang Yang
  • Publication number: 20240050951
    Abstract: An article includes a flexible structured film with a first major surface and a second major surface, wherein a first major surface of the flexible structured film has a plurality of posts separated by land areas, and the posts have an exposed surface. An anti-biofouling layer resides in the land areas, and the anti-biofouling layer has a methylated surface. An inorganic layer is on the exposed surfaces of the posts, wherein the inorganic layer includes a metal or a metal oxide. An analyte binding layer is on the inorganic layer, wherein the analyte binding layer is chosen from a reactive silane, a functionalizable hydrogel, a functionalizable polymer, and mixtures and combinations thereof. An exposed surface of the analyte binding layer includes at least one functional group selected to bind with a biochemical analyte.
    Type: Application
    Filed: November 24, 2021
    Publication date: February 15, 2024
    Inventors: Henrik B. van Lengerich, Caleb T. Nelson, Kayla C. Niccum, Jeffrey L. Solomon, Paul B. Armstrong, Joshua M. Fishman, Tonya D. Bonilla, Phillip D. Hustad, David J. Tarnowski
  • Publication number: 20240010779
    Abstract: A process to form a composition comprising an ethylene/vinylarene multiblock interpolymer, said process comprising polymerizing, in a single reactor, a mixture comprising ethylene, a vinylarene, and optionally an alpha-olefin, in the presence of at least the following a)-c): a) a first metal complex selected from the following Formula (A), as described herein: b) a second metal complex selected from the following Formula (B), as described herein, and c) a chain shuttling agent selected from the following: a dialkyl zinc, a trialkyl aluminum, or a combination thereof.
    Type: Application
    Filed: December 16, 2021
    Publication date: January 11, 2024
    Inventors: Evelyn Auyeung, Rhett A. Baillie, Thomas Wesley Karjala, JR., Zhe Zhou, Jeffrey C. Munro, Colin Li Pi Shan, Phillip D. Hustad, Tobin J. Marks, Yanshan Gao
  • Publication number: 20240002586
    Abstract: A curable composition comprises an addition polymerizable cycloolefin comprising a ring containing a single car-bon-carbon double bond; an addition polymerization catalyst; and at least one of hollow glass microspheres, expanded polymeric mi-crospheres, or expandable polymeric microspheres. The curable composition may be 1-part or 2-part. Methods of curing the curable composition are disclosed. Cured compositions, and articles including the same are also disclosed.
    Type: Application
    Filed: November 29, 2021
    Publication date: January 4, 2024
    Inventors: Binhong Lin, Mario A. Perez, Phillip D. Hustad, Erik M. Townsend
  • Publication number: 20230265222
    Abstract: An interpolymer, which comprises at least one siloxane group, and prepared by polymerizing a mixture comprising one or more “addition polymerizable monomers” and at least one siloxane monomer, in the presence of a catalyst system comprising a Group 3-10 metal complex, and the siloxane monomer is selected from the following Formula 1: Aa-Si(Bb)(Cc)(Hh0)—O—(Si(Dd)(Ee) (Hh1)—O)x—Si(Ff)(Gg)(Hh2), described herein. An ethylene/siloxane interpolymer comprising at least one chemical unit of Structure 1, or at least one chemical unit of Structure 2, each described herein. A process to form an interpolymer, which comprises, in polymerized form, at least one siloxane monomer, or at least one silane monomer without a siloxane linkage, said process comprising polymerizing a mixture comprising one or more “addition polymerizable monomers” and at least one monomer of Formula 4, described herein, in the presence of a catalyst system comprising a metal complex from Formula A or Formula B, each described herein.
    Type: Application
    Filed: June 23, 2021
    Publication date: August 24, 2023
    Applicants: Dow Global Technologies LLC, Dow Silicones Corporation, Rohm and Haas Company
    Inventors: Liam Spencer, Zachary S. Kean, David D. Devore, Jordan C. Reddel, Bethany M. Neilson, Matthew Olsen, Zhanjie Li, Phillip D. Hustad
  • Publication number: 20220032588
    Abstract: The present disclosure provides a multilayer film. The multilayer film includes at least two layers including a sealant layer and a second layer in contact with the sealant layer. The sealant layer contains (A) a first ethylene-based polymer having a density from 0.900 g/cc to 0.925 g/cc and a melt index from 0.5 g/10 min to 30 g/10 min; and (B) a polyethylene-polydimethylsiloxane block copolymer having a weight average molecular weight from 1,000 g/mol to 10,000 g/mol. The second layer contains a second ethylene-based polymer.
    Type: Application
    Filed: December 10, 2019
    Publication date: February 3, 2022
    Inventors: Rahul Sharma, Jeffrey D. Weinhold, Phillip D. Hustad, Megan E. Donaldson, Xiaoyong Li, Joseph C. Neuman, Yang Yang
  • Patent number: 11021630
    Abstract: Disclosed herein is a method comprising disposing upon a substrate a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; an additive polymer; where the additive polymer comprises a reactive moiety that is operative to react with a substrate upon which it is disposed; and where the additive polymer comprises a homopolymer that is the chemically and structurally the same as one of the polymers in the block copolymer or where the additive polymer comprises a random copolymer that has a preferential interaction with one of the blocks of the block copolymers; and a solvent; and annealing the composition.
    Type: Grant
    Filed: November 18, 2015
    Date of Patent: June 1, 2021
    Assignees: ROHM AND HAAS ELECTRONIC MATERIALS LLC, DOW GLOBAL TECHNOLOGIES LLC
    Inventors: Phillip D. Hustad, Peter Trefonas, III, Shih-Wei Chang
  • Publication number: 20210017311
    Abstract: The present disclosure is directed to a silicon-terminated telechelic polyolefin composition comprising a compound of formula (I). Embodiments related to a process for preparing the silicon-terminated telechelic polyolefin composition comprising a compound of formula (I), the process comprising combining starting materials comprising (A) a silicon-terminated organo-metal compound and (B) a silicon-based functionalization agent, thereby obtaining a product comprising the silicon-terminated telechelic polyolefin composition. In further embodiments, the starting materials of the process may further comprise (C) a nitrogen containing heterocycle. In further embodiments, the starting materials of the process may further comprise (D) a solvent.
    Type: Application
    Filed: March 18, 2019
    Publication date: January 21, 2021
    Inventors: Jongwook Choi, David D. Devore, Robert David Grigg, Phillip D. Hustad, Jaclyn Murphy, Mark E. Ondari, Jordan Reddel, Lixin Sun
  • Publication number: 20210002315
    Abstract: The present disclosure is directed to a silicon-terminated organo-metal composition comprising a compound of formula (I). Embodiments relate to a process for preparing the silicon-terminated organo-metal composition comprising the compound of formula (I), the process comprising combining starting materials comprising (A) a vinyl-terminated silicon-based compound and (B) a chain shuttling agent, thereby obtaining a product comprising the silicon-terminated organo-metal composition. In further embodiments, the starting materials of the process may further comprise (C) a solvent.
    Type: Application
    Filed: March 18, 2019
    Publication date: January 7, 2021
    Inventors: Lixin Sun, Phillip D. Hustad
  • Publication number: 20210002308
    Abstract: The present disclosure is directed to a silicon-terminated organo-metal composition comprising a compound of formula (I). Embodiments relate to a process for preparing the silicon-terminated organo-metal composition comprising the compound of formula (I), the process comprising combining starting materials comprising (A) a vinyl-terminated silicon-based compound, (B) a chain shuttling agent, (C) a procatalyst, and (D) an activator, thereby obtaining a product comprising the silicon-terminated organo-metal composition. In further embodiments, the starting materials of the process may further comprise (E) a solvent and/or (F) a scavenger.
    Type: Application
    Filed: March 18, 2019
    Publication date: January 7, 2021
    Inventors: Lixin Sun, Phillip D. Hustad
  • Patent number: 10351727
    Abstract: Disclosed herein is a pattern forming method comprising disposing upon a substrate a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; an additive polymer; where the additive polymer comprises a bottlebrush polymer; and where the bottlebrush polymer comprises a polymer that has a lower or a higher surface energy than the block copolymer; and a solvent; and annealing the composition to facilitate domain separation between the first polymer and the second polymer of the block copolymer to form a morphology of periodic domains formed from the first polymer and the second polymer; where a longitudinal axis of the periodic domains are parallel to the substrate.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: July 16, 2019
    Assignee: DOW GLOBAL TECHNOLOGIES LLC
    Inventors: Phillip D. Hustad, Peter Trefonas, III, Valeriy V. Ginzburg, Bongkeun Kim, Glenn H. Fredrickson
  • Patent number: 10294359
    Abstract: Disclosed herein is a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; an additive polymer comprising a polymer wherein the surface tension of the polymer with the first polymer and the surface tension of the polymer with the second polymer are both lower than the surface tension between the first polymer and second polymer; where the additive polymer comprises a reactive functional moiety that forms a bond or a complex or a coordinate with the substrate upon being disposed on the substrate; where the reactive functional moiety is unreacted when it is a part of the composition; and a solvent.
    Type: Grant
    Filed: November 18, 2015
    Date of Patent: May 21, 2019
    Assignees: ROHM AND HAAS ELECTRONIC MATERIALS LLC, DOW GLOBAL TECHNOLOGIES LLC
    Inventors: Phillip D. Hustad, Jieqian Zhang, Peter Trefonas, III
  • Patent number: 10287455
    Abstract: Disclosed herein is an article comprising a substrate; upon which is disposed a composition comprising: a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the first and the second block copolymer have a chi parameter greater than 0.04 at a temperature of 200° C.
    Type: Grant
    Filed: April 24, 2017
    Date of Patent: May 14, 2019
    Assignees: DOW GLOBAL TECHNOLOGIES LLC, ROHM AND HAAS ELECTRONIC MATERIALS LLC
    Inventors: Jieqian Zhang, Phillip D. Hustad, Peter Trefonas, III, Mingqi Li, Valeriy V. Ginzburg, Jeffrey D. Weinhold
  • Patent number: 10167411
    Abstract: Disclosed herein is a block copolymer comprising a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and an additive copolymer; where the additive copolymer comprises a surface free energy reducing moiety where the surface free energy reducing moiety has a lower surface free energy than that of the first segment and the second segment; the additive copolymer further comprising one or more moieties having an affinity to the block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment; where the additive copolymer is not water miscible; and where the additive copolymer is not covalently bonded with the block copolymer.
    Type: Grant
    Filed: June 23, 2016
    Date of Patent: January 1, 2019
    Assignees: DOW GLOBAL TECHNOLOGIES LLC, ROHM AND HAAS ELECTRONIC MATERIALS LLC
    Inventors: Peter Trefonas, III, Phillip D. Hustad, Deyan Wang, Rahul Sharma, Mingqi Li, Jieqian J. Zhang
  • Patent number: 10162265
    Abstract: Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a polymer comprising a surface attachment group for forming a bond with a surface of the patterned feature and a solvent, and wherein the pattern treatment composition is free of crosslinkers; (c) removing residual pattern treatment composition from the substrate with a first rinse agent, leaving a coating of the polymer over and bonded to the surface of the patterned feature; and (d) rinsing the polymer-coated patterned feature with a second rinse agent that is different from the first rinse agent, wherein the polymer has a solubility that is greater in the first rinse agent than in the second rinse agent. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
    Type: Grant
    Filed: October 18, 2016
    Date of Patent: December 25, 2018
    Assignees: Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLC
    Inventors: Jong Keun Park, Mingqi Li, Amy M. Kwok, Phillip D. Hustad
  • Patent number: 10133179
    Abstract: A pattern treatment method, comprising: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises: a block copolymer and an organic solvent, wherein the block copolymer comprises: (i) a first block comprising a first unit formed from 4-vinyl-pyridine, and (ii) a second block comprising a first unit formed from a vinyl aromatic monomer; and (c) removing residual pattern shrink composition from the substrate, leaving a coating of the block copolymer over the surface of the patterned feature, thereby providing a reduced pattern spacing as compared with a pattern spacing of the patterned feature prior to coating the pattern treatment composition. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: November 20, 2018
    Assignees: Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLC
    Inventors: Jin Wuk Sung, Mingqi Li, Jong Keun Park, Joshua A. Kaitz, Vipul Jain, Chunyi Wu, Phillip D. Hustad
  • Patent number: 10042255
    Abstract: Block copolymers comprise a first block comprising an alternating copolymer, and a second block comprising a unit comprising a hydrogen acceptor. The block copolymers find particular use in pattern shrink compositions and methods in semiconductor device manufacture for the provision of high resolution patterns.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: August 7, 2018
    Assignees: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLC
    Inventors: Huaxing Zhou, Vipul Jain, Jin Wuk Sung, Peter Trefonas, III, Phillip D. Hustad, Mingqi Li
  • Publication number: 20180188219
    Abstract: Disclosed herein is a gas sensor comprising a piezoelectric substrate; and a first polymeric layer disposed on the substrate; where the first polymeric layer has a first surface contacting a substrate and a second surface having a higher surface area than the first surface, where the first polymeric layer comprises a repeat unit that is effective to adsorb molecules present in the atmosphere.
    Type: Application
    Filed: December 19, 2017
    Publication date: July 5, 2018
    Inventors: Eui Hyun Ryu, Peter Trefonas, III, Bok-Hee Lee, Phillip D. Hustad
  • Patent number: 10011713
    Abstract: Disclosed herein is a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; and an additive polymer; where the additive polymer comprises a reactive moiety that is reacted to a substrate upon which it is disposed; and where the additive polymer comprises a homopolymer that is the chemically and structurally the same as one of the polymers in the block copolymer or where the additive polymer comprises a random copolymer that has a preferential interaction with one of the blocks of the block copolymers.
    Type: Grant
    Filed: November 18, 2015
    Date of Patent: July 3, 2018
    Assignees: DOW GLOBAL TECHNOLOGIES LLC, ROHM AND HAAS ELECTRONIC MATERIALS LLC
    Inventors: Phillip D. Hustad, Peter Trefonas, III, Shih-Wei Chang
  • Patent number: 9916973
    Abstract: Provided are photolithographic methods.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: March 13, 2018
    Assignees: Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLC
    Inventors: Phillip D. Hustad, Jong Keun Park