Abstract: Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.

Abstract: Photoresist compositions include a blend of a phenolic polymer with a (meth)acrylate-based copolymer free of ether-containing and/or carboxylic acid-containing moieties. The (meth)acrylate copolymer includes a first monomer selected from the group consisting of an alkyl acrylate, a substituted alkyl acrylate, an alkyl (meth)acrylate, a substituted alkyl methacrylate and mixtures thereof, and a second monomer selected from the group consisting of an acrylate, a (meth)acrylate or a mixture thereof having an acid cleavable ester substituent; and a photoacid generator. Also disclosed are processes for generating a photoresist image on a substrate with the photoresist composition.

Abstract: Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.

Abstract: Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.

Abstract: Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.

Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.

Abstract: Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.

Abstract: Photoresist compositions include a blend of a phenolic polymer with a (meth)acrylate-based copolymer free of ether-containing and/or carboxylic acid-containing moieties. The (meth)acrylate copolymer includes a first monomer selected from the group consisting of an alkyl acrylate, a substituted alkyl acrylate, an alkyl (meth)acrylate, a substituted alkyl methacrylate and mixtures thereof, and a second monomer selected from the group consisting of an acrylate, a (meth)acrylate or a mixture thereof having an acid cleavable ester substituent; and a photoacid generator. Also disclosed are processes for generating a photoresist image on a substrate with the photoresist composition.

Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.

Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.

Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.

Abstract: The invention relates generally to the bonding of one or more sliders in styrene and butadiene polymers. More particularly, the invention relates to planarized slider assemblies formed by using debondable solid encapsulants comprised of styrene and butadiene polymers. The invention also relates to methods that use such encapsulants in conjunction with resists to produce magnetic head sliders having patterned air-bearing surfaces.

Abstract: The invention relates generally to the bonding of one or more sliders in styrene and acrylate polymers. More particularly, the invention relates to planarized slider assemblies formed by using debondable solid encapsulants comprised of styrene and acrylate polymers. The invention also relates to methods that use such encapsulants in conjunction with resists to produce magnetic head sliders having patterned air-bearing surfaces.

Abstract: The invention relates generally to the bonding of one or more sliders in styrene and acrylate polymers. More particularly, the invention relates to planarized slider assemblies formed by using debondable solid encapsulants comprised of styrene and acrylate polymers. The invention also relates to methods that use such encapsulants in conjunction with resists to produce magnetic head sliders having patterned air-bearing surfaces.

Abstract: The invention relates generally to the bonding of one or more sliders in styrene and butadiene polymers. More particularly, the invention relates to planarized slider assemblies formed by using debondable solid encapsulants comprised of styrene and butadiene polymers. The invention also relates to methods that use such encapsulants in conjunction with resists to produce magnetic head sliders having patterned air-bearing surfaces.

Abstract: A slider assembly is provided comprising a plurality of sliders bonded by a debondable solid encapsulant. The solid encapsulant is comprised of a silicon-based polymer. Each slider has a surface that is free from the encapsulant. The encapsulant-free surfaces are coplanar to each other. Also provided are methods for forming the assembly and methods for patterning a slider surface using the encapsulant.

Abstract: A series of photoactivatible surface bound linker molecules, which can be used to fabricate biomolecular arrays, is described. Specifically, a composition which includes a solid substrate; an organic linking group having one terminal end portion bound to the solid substrate and at least one other terminal end portion containing an alcohol or carbonyl functionality; and an acid labile protecting group selected from acetals and ketals bound to the alcohol or carbonyl functionality. A composition which comprises a solid substrate; an organic linking group having one terminal end portion bound to the solid substrate and at least one other terminal end portion containing an aldehyde group is also described. The present invention further provides a composition which includes a solid substrate; and at least one of a photoacid generator or a sensitizer bound to the solid substrate.

Abstract: A scaleable and high-yielding method of preparing copolymers that is useful as a component of a radiation sensitive resin composition is provided. The method includes the step of reacting at least one monomer A which is an unsaturated alicyclic monomer and forms a polymer main chain by dissociation of the unsaturated bond, and at least one unsaturated monomer B, which also forms a polymer chain by dissociation of an unsaturated bond, wherein less than two electron-withdrawing groups are directly appended to said unsaturation, and where said monomer B is other than the unsaturated alicyclic monomer and forms a polymer main chain, in the presence of a free radical initiator. The reacting step is carried out in a stoichiometric excess of monomer A as compared to monomer B. By carrying out the reacting step in an excess of monomer A as compared to monomer B, the resultant copolymer will have a greater molar concentration of monomer A than is obtainable using other methods.

Abstract: Several mid UV photo acid generators (PAGs), a chemically amplified photo resist (CAMP), and method for improving nested to isolated line bias are provided. Similarly, photo speed may also be improved. Unlike conventional mid UV PAGs, the present invention's PAG compounds, resist composition, and method do not require a mid UV sensitizer. Specifically, PAGs are provided that bear a chromophore capable of receiving mid UV radiation, particularly I-line, and that are suitable for use in a chemically amplified photo resist having a photo speed of 500 mJ/cm.sup.2 or less, but preferrably 200 mJ/cm.sup.2 or less. For example, the PAGs can be a sulfonium or iodonium salt, such as anthryl, butyl, methyl sulfonium triflate and bis(4-t-butylphenyl)iodonium 9,10-dimethoxyanthracene sulfonate.

Abstract: The present invention relates to thioxanthone sensitizers for radiation sensitive polyimide compositions for use in manufacturing integrated circuits such as chips, thin film packaging and printed circuit boards.