Abstract: Disclosed is a bearing component having at least one layer having a high hardness and a high current insulation property, the layer comprising a nonconductive oxide layer selected from the group comprising an Al2O3 layer, a TaO layer, an SiO2 layer, a mixed layer comprising two or more of the foregoing oxides, a multilayer structure comprising alternating layers of two or more of the foregoing oxides and a DLC layer such as a ta-C layer, there being at least one ALD layer comprising at least one layer of a material deposited by an ALD (atomic layer deposition) process on the at least one layer having a high hardness and a high current insulation property, the ALD layer itself having a high current insulation property and comprising a material or layer structure selected from the said group of materials.

Abstract: A coated article of steel having at least one layer having a high hardness and a high resistance to wear applied by a deposition (e.g., PVD, a CVD, or PECVD) process, at least one surface region of said article and at least one ALD layer comprising at least one layer of a material deposited by an ALD (atomic layer deposition) process on said at least one layer, wherein the steel of which the article is made is a martensitic grade of steel, wherein the at least one layer, is a DLC layer, a metal-DLC layer, or a CrAlN layer and has a thickness in the range from 0.5 microns to 4 microns and a hardness in the range from 20 GPa to 100 GPa, and wherein the ALD layer has a thickness in the range from 1 nm to 100 nm.

Abstract: An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Also various other apparatus and methods are presented.

Abstract: The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being configured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf, and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question.