Patents by Inventor Pierre Baruch

Pierre Baruch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for improving the doping of a semiconductor material
    Patent number: 4004950
    Abstract: In a first step, the semiconductor material is doped in a known manner with impurities having a given conductivity type and a given concentration profile. In a second step, the material is maintained at a high temperature, bombarded with a beam of particles which are accelerated with a given energy so as to penetrate into the crystal during a predetermined time interval. The resultant migration of impurities produces an increase in the impurity concentration irrespective of the sign of the initial concentration gradient within a zone adjacent to the zone of stopping of the particles.
    Type: Grant
    Filed: January 10, 1975
    Date of Patent: January 25, 1977
    Assignees: Agence Nationale de Valorisation de la Recherche (ANVAR), Commissariat a l'Energie Atomique
    Inventors: Pierre Baruch, Joseph Borel, Joel Monnier