Abstract: The invention relates to an optoelectronic device, having at least one microwire or nanowire extending along a longitudinal axis substantially orthogonal to a plane of a substrate, and including: a first doped portion produced from a first semiconductor compound; an active zone extending from the first doped portion; a second doped portion, at least partially covering the active zone; characterised in that the active zone comprises a wider single-crystal portion: formed of a single crystal of a second semiconductor compound and at least one additional element; extending from an upper face of one end of the first doped portion, and having a mean diameter greater than that of the first doped portion.

Abstract: The invention relates to an optoelectronic device, having at least one microwire or nanowire extending along a longitudinal axis substantially orthogonal to a plane of a substrate, and including: a first doped portion produced from a first semiconductor compound; an active zone extending from the first doped portion; a second doped portion, at least partially covering the active zone; characterised in that the active zone comprises a wider single-crystal portion: formed of a single crystal of a second semiconductor compound and at least one additional element; extending from an upper face of one end of the first doped portion, and having a mean diameter greater than that of the first doped portion.

Abstract: A light-emitting device including a substrate, three-dimensional semiconductor elements resting on the substrate, at least one shell at least partially covering the lateral walls of the semiconductor element, the shell including an active area having multiple quantum wells, and an electrode at least partially covering the shell, at least a portion of the active area being sandwiched between the electrode and the lateral walls of the semiconductor element. The active area includes an alternation of first semiconductor layers mainly including a first element and a second element and of second semiconductor layers mainly including the first element and the second element and further including a third element. In at least three of the layers, the mass concentration of the third element increases in the portion of the active layer as the distance to the substrate decreases.

Abstract: A light-emitting device including a substrate, three-dimensional semiconductor elements resting on the substrate, at least one shell at least partially covering the lateral walls of the semiconductor element, the shell including an active area having multiple quantum wells, and an electrode at least partially covering the shell, at least a portion of the active area being sandwiched between the electrode and the lateral walls of the semiconductor element. The active area includes an alternation of first semiconductor layers mainly including a first element and a second element and of second semiconductor layers mainly including the first element and the second element and further including a third element. In at least three of the layers, the mass concentration of the third element increases in the portion of the active layer as the distance to the substrate decreases.

Abstract: A method of forming an organized network of ZnO nanowires including the steps of obtaining, on a substrate, a ZnO layer of Zn polarity, by epitaxial growth at low temperature, advantageously in the range from 400° C. to 650° C., and advantageously in the presence of dioxygen (O2); forming, on this layer, a mask provided with openings for the subsequent growth of nanorods; epitaxially growing ZnO nanorods.

Abstract: A method of formation of nanowires at a surface of a substrate attached to a solid immersion lens. The method includes formation of a catalyst element at the surface of the substrate and growth of nanowires from the catalyst element formed at the surface of the substrate. The catalyst element is a metal nanoparticle and the formation of the catalyst element at the surface of the substrate deposits the metal nanoparticle using a light beam focused by the solid immersion lens at the surface of the substrate.

Abstract: A process of making a microelectronic light-emitting device, including: a) growth on a metallic support of multiple wires based on one or more semi-conducting materials designed to emit radiant light, and b) formation of at least one electrical conducting zone of contact on at least one of the wires.

Abstract: A 3D imaging device is comprised of a photodetector matrix, a layer of material fixed on a face of the photodetector matrix, the layer of material being capable of absorbing or reflecting light, an opening being formed in said layer of material at each photodetector, a layer of insulating material fixed on said layer of material capable of reflecting or absorbing light, the layer of insulating material having a face surrounding, in the body thereof, a set of G waveguides, each waveguide of the set of waveguides being positioned vertically in relation to said face, opposite an opening, the heights of the different waveguides, considered in relation to the face of the layer of insulating material, defining N distinct levels, N being a whole number greater than or equal to 2.

Abstract: A light-emitting diode including: a structure in a semiconductor material of first conductivity type, wherein the structure has a first face of which a first region is in contact with a pad of semiconductor material having a second conductivity type opposite the first conductivity type, and the diode further includes a first electric contact on the pad, a second electric contact-on the first face or on a second face of the structure, and a gate in electrically conductive material arranged on a second region of the first face and separated from the first face by an electrically insulating layer.

Abstract: A method of formation of nanowires at a surface of a substrate attached to a solid immersion lens. The method includes formation of a catalyst element at the surface of the substrate and growth of nanowires from the catalyst element formed at the surface of the substrate. The catalyst element is a metal nanoparticle and the formation of the catalyst element at the surface of the substrate deposits the metal nanoparticle using a light beam focused by the solid immersion lens at the surface of the substrate.

Abstract: Electrodes made from metallic material are formed on a layer of dielectric material. A bottom layer of at least one of the electrodes constitutes a catalyst material in direct contact with the layer of dielectric material. Nanowires are grown by means of the catalyst, between the electrodes, parallel to the layer of dielectric material. The nanowires connecting the two electrodes are then made from single-crystal semi-conductor material and in contact with the layer of dielectric material.

Abstract: The invention concerns a 3D imaging device comprising a photodetector (2) matrix (M), a layer of material (1) fixed on a face of the photodetector matrix, the layer of material (1) being capable of absorbing or reflecting light, an opening (3) being formed in said layer of material at each photodetector (2), a layer of insulating material (6) fixed on said layer of material (1) capable of reflecting or absorbing light, the layer of insulating material (6) having a face surrounding, in the body thereof, a set of G waveguides (5), each waveguide (5) of the set of waveguides being positioned vertically in relation to said face, opposite an opening (3), the heights of the different waveguides, considered in relation to the face of the layer of insulating material, defining N distinct levels, N being a whole number greater than or equal to 2.

Abstract: Electrodes made from metallic material are formed on a layer of dielectric material. A bottom layer of at least one of the electrodes constitutes a catalyst material in direct contact with the layer of dielectric material. Nanowires are grown by means of the catalyst, between the electrodes, parallel to the layer of dielectric material. The nanowires connecting the two electrodes are then made from single-crystal semi-conductor material and in contact with the layer of dielectric material.

Abstract: The subject of the invention is a light-emitting diode comprising a structure (1) in semiconductor material of first conductivity type and means for electric polarisation of the diode. The structure (1) has a first face (2) of which a first region is in contact with a pad (5) in semiconductor material of second conductivity type opposite the first conductivity type, the polarisation means comprise: an electric contact (7) on the pad (5), an electric contact(8) on the first face or on a second face (9) of the structure (1), a gate (3) in electrically conductive material arranged on a second region of the first face and separated from the first face by an electrically insulating layer (4).

Abstract: A process of making a microelectronic light-emitting device, including: a) growth on a metallic support of multiple wires based on one or more semi-conducting materials designed to emit radiant light, and b) formation of at least one electrical conducting zone of contact on at least one of the wires.

Abstract: A dual-band planar infrared detector with space-time coherence, with a stack of semiconductor layers (16, 18, 20, 21) forming first and second photodiodes. The detector has a planar structure in which each layer has a part showing on a surface (22) substantially perpendicular to the stack.