Patents by Inventor Pierre Henri Rene Della Nave
Pierre Henri Rene Della Nave has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10506147Abstract: In various embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed-in portion of the first image projected on the first image sensor array.Type: GrantFiled: June 13, 2016Date of Patent: December 10, 2019Assignee: InVisage Technologies, Inc.Inventors: Michael R. Malone, Pierre Henri Rene Della Nave, Michael Charles Brading, Jess Jan Young Lee, Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
-
Publication number: 20190250407Abstract: Technologies described herein provide a display device having a see-through relay for providing a virtual reality and a mixed environment display. In some embodiments, an optical device includes a waveguide configured to operate as a periscope for receiving light from a real-world view. The light from the real-world view can be relayed to a user's eye(s) to overlay the real-world view on top of computer-generated images using minimal optical devices. This approach allows drastic cost, power consumption and weight reductions for devices that need to present mixed reality content to a user. This approach also allows for a great reduction in size of the holographic computer unit housing the optical device, as traditional systems may require a number of optical devices and computing power to shape the output of computer-generated images to properly overlay the real-world view with the images.Type: ApplicationFiled: February 15, 2018Publication date: August 15, 2019Inventors: Pierre Henri Rene DELLA NAVE, Richard Andrew WALL
-
Patent number: 10225504Abstract: Image sensors and methods of using image sensors are disclosed. In an embodiment, the image sensor includes pixel regions having optically sensitive material (OSM). A bias voltage is provided to the OSM via a bias electrode for each pixel region. A pixel circuit (PC) for each pixel region includes a read out circuit and a charge store (CS) coupled to the OSM of the respective pixel region. The PC resets voltage on the CS to a reset voltage during a reset period, integrates charge from the OSM to the CS during an integration period, and reads out a signal from the CS during a read out period. The PC includes a reference voltage node coupled to the CS during the reset period and the read out circuit during the read out period, a reference voltage is applied to the reference voltage node and is varied during operation of the PC.Type: GrantFiled: September 19, 2016Date of Patent: March 5, 2019Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Hui Tian, Pierre Henri Rene Della Nave
-
Patent number: 10154209Abstract: In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.Type: GrantFiled: December 30, 2016Date of Patent: December 11, 2018Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Hui Tian, Jess Jan Young Lee, Pierre Henri Rene Della Nave
-
Patent number: 9972652Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: GrantFiled: November 7, 2016Date of Patent: May 15, 2018Assignee: INVISAGE TECHNOLOGIES, INC.Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
-
Publication number: 20170276897Abstract: Technologies described herein provide an enhanced lens assembly. In some configurations, a lens assembly includes a barrel configured with a number of components arranged therein. The components include at least a first lens, a second lens and a spacer positioned between the lenses. At least one lens is fastened to the barrel by one or more techniques, which may include the application of an adhesive to hold the lens in a predetermined location within the barrel. In other techniques, a lens is fastened to the barrel by the use of a laser or other like device configured to weld the lens to the barrel. In some configurations, the first lens and the second lens can be separated by a spacer that is made from a material having a linear thermal expansion coefficient within a predetermined range.Type: ApplicationFiled: March 25, 2016Publication date: September 28, 2017Inventors: Ravi Nalla, Pierre Henri Rene Della nave, Kevin James Matherson
-
Publication number: 20170111598Abstract: In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.Type: ApplicationFiled: December 30, 2016Publication date: April 20, 2017Inventors: Hui Tian, Jess Jan Young Lee, Pierre Henri Rene Della Nave
-
Publication number: 20170069679Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: ApplicationFiled: November 7, 2016Publication date: March 9, 2017Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
-
Publication number: 20170013218Abstract: Image sensors and methods of using image sensors are disclosed. In an embodiment, the image sensor includes pixel regions having optically sensitive material (OSM). A bias voltage is provided to the OSM via a bias electrode for each pixel region. A pixel circuit (PC) for each pixel region includes a read out circuit and a charge store (CS) coupled to the OSM of the respective pixel region. The PC resets voltage on the CS to a reset voltage during a reset period, integrates charge from the OSM to the CS during an integration period, and reads out a signal from the CS during a read out period. The PC includes a reference voltage node coupled to the CS during the reset period and the read out circuit during the read out period, a reference voltage is applied to the reference voltage node and is varied during operation of the PC.Type: ApplicationFiled: September 19, 2016Publication date: January 12, 2017Inventors: Hui Tian, Pierre Henri Rene Della Nave
-
Patent number: 9538102Abstract: In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.Type: GrantFiled: August 26, 2013Date of Patent: January 3, 2017Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Jess Jan Young Lee, Pierre Henri Rene Della Nave
-
Patent number: 9491388Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: GrantFiled: December 22, 2014Date of Patent: November 8, 2016Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
-
Publication number: 20160301841Abstract: In various embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed-in portion of the first image projected on the first image sensor array.Type: ApplicationFiled: June 13, 2016Publication date: October 13, 2016Inventors: Michael R. Malone, Pierre Henri Rene Della Nave, Michael Charles Brading, Jess Jan Young Lee, Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
-
Patent number: 9451188Abstract: In various embodiments, an image sensor and method of using an image sensor are described. In an example embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions with each pixel region comprising an optically sensitive material over the substrate and positioned to receive light. There is a bias electrode for each pixel region, with the bias electrode configured to provide a bias voltage to the optically sensitive material of the respective pixel region. Also included is a pixel circuit for each pixel region with each pixel circuit comprising a charge store formed on the semiconductor substrate and a read out circuit, the charge store being in electrical communication with the optically sensitive material of the respective pixel region.Type: GrantFiled: May 22, 2014Date of Patent: September 20, 2016Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Pierre Henri Rene Della Nave
-
Patent number: 9369621Abstract: In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array includes at least four megapixels and the second image sensor array includes one-half or less than the number of pixels in the first image sensor array.Type: GrantFiled: May 3, 2011Date of Patent: June 14, 2016Assignee: InVisage Technologies, Inc.Inventors: Michael R. Malone, Pierre Henri Rene Della Nave, Michael Charles Brading, Jess Jan Young Lee, Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
-
Publication number: 20150208011Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: ApplicationFiled: December 22, 2014Publication date: July 23, 2015Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
-
Patent number: 8916947Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: GrantFiled: June 8, 2011Date of Patent: December 23, 2014Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
-
Publication number: 20140253769Abstract: In various embodiments, an image sensor and method of using an image sensor are described. In an example embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions with each pixel region comprising an optically sensitive material over the substrate and positioned to receive light. There is a bias electrode for each pixel region, with the bias electrode configured to provide a bias voltage to the optically sensitive material of the respective pixel region. Also included is a pixel circuit for each pixel region with each pixel circuit comprising a charge store formed on the semiconductor substrate and a read out circuit, the charge store being in electrical communication with the optically sensitive material of the respective pixel region.Type: ApplicationFiled: May 22, 2014Publication date: September 11, 2014Applicant: InVisage Technologies, Inc.Inventors: Hui Tian, Pierre Henri Rene Della Nave
-
Patent number: 8736733Abstract: In various embodiments, an image sensor and method of using an image sensor are described. In an example embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions with each pixel region comprising an optically sensitive material over the substrate and positioned to receive light. There is a bias electrode for each pixel region, with the bias electrode configured to provide a bias voltage to the optically sensitive material of the respective pixel region. Also included is a pixel circuit for each pixel region with each pixel circuit comprising a charge store formed on the semiconductor substrate and a read out circuit, the charge store being in electrical communication with the optically sensitive material of the respective pixel region.Type: GrantFiled: March 18, 2011Date of Patent: May 27, 2014Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Pierre Henri Rene Della Nave
-
Publication number: 20140098267Abstract: In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.Type: ApplicationFiled: August 26, 2013Publication date: April 10, 2014Applicant: InVisage Technologies, Inc.Inventors: Hui Tian, Jess Jan Young Lee, Pierre Henri Rene Della Nave
-
Patent number: 8546737Abstract: In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.Type: GrantFiled: October 28, 2010Date of Patent: October 1, 2013Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Jess Jan Young Lee, Pierre Henri Rene Della Nave